2SC1061
Abstract: 2SA671 transistor 2SC1061 2sA671 transistor
Text: 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
|
Original
|
PDF
|
2SA671
O-220
2SC1061
2SC1061
2SA671
transistor 2SC1061
2sA671 transistor
|
2SC1061
Abstract: transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor
Text: 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
|
Original
|
PDF
|
2SC1061
O-220
2SA671
2SC1061
transistor 2SC1061
2sc1061 npn transistor datasheet
2SA671
2sc1061 npn transistor
|
2sa671
Abstract: 2SA670 2SC1061 2sa671 equivalent 2SC1061 PNP
Text: SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency
|
Original
|
PDF
|
2SA671
O-220
2SC1061
2SA670
O-220)
2sa671
2SC1061
2sa671 equivalent
2SC1061 PNP
|
2SC1061
Abstract: 2SC1060 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671
Text: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power
|
Original
|
PDF
|
2SC1061
O-220
2SA671
2SC1060
2SC1061
2Sc1060 equivalent
2SC1061 B
2sc1061 equivalent
2sc1061 datasheet
2SA671
|
2SC1061
Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
Text: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications
|
Original
|
PDF
|
2SC1061
O-220
2SA671
2SC1060
2SC1061
2Sc1060 equivalent
2SA671
2SC1061 C
|
2SC1061
Abstract: 2sc1060 2SA671 2SC1061 C 2SC1061-C
Text: SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications
|
Original
|
PDF
|
2SC1061
O-220
2SA671
2SC1060
2SC1061
2SA671
2SC1061 C
2SC1061-C
|
2SA671
Abstract: 2SC1061 2SA670 2SC1061 PNP
Text: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications
|
Original
|
PDF
|
2SA671
O-220
2SC1061
2SA670
O-220)
2SA671
2SC1061
2SC1061 PNP
|
2SC1061
Abstract: 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier
|
Original
|
PDF
|
2SA671
2SC1061
2SC1061
2SA671
2sA671 transistor
Transistor 2sC1061
2sa671 equivalent
2sC1061 transistor
2sc1061 equivalent
|
2SC1061 f
Abstract: No abstract text available
Text: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A • DC Current Gain
|
Original
|
PDF
|
2SA671
2SC1061
O-220C
-50mA
2SC1061 f
|
Untitled
Abstract: No abstract text available
Text: J.S.11S.U <~>z ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A
|
Original
|
PDF
|
2SA671
2SC1061
O-220C
-50mA
|
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
|
Original
|
PDF
|
2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
|
DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
|
Original
|
PDF
|
2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
BU724AS
mje2055
2n3055 replacement
BUX98PI
BD263
BD699
BD292
2N5037
|
DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
|
Original
|
PDF
|
2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
2SC4977
MJE102
BD699
2SA1046
BU808DFI equivalent
2n3055 replacement
MJ2955 replacement
BUH513
|
jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
|
Original
|
PDF
|
ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
|
|
LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
|
Original
|
PDF
|
2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
|
STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
|
Original
|
PDF
|
2N3054
2N32741
2N4240
2N4908
2N3054A
2N3766
2N4273
2N4909
2N3055
2N3767
STRS6307
STR5412
2N3055 TO-220
S2000A3
STRS6309
S2000a2
BDW36
2SC3883
strs6308
STR6020
|
FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
|
Original
|
PDF
|
2N1112
2N1212
2N1217
2N1711
2N2219A
2N2222
2N2222A
2N2369
2N2369A
FN1016
2sC9012
on4409
on4673
ON4843
C9012
S2000A3
bul310xi
2SD5080
MN1016
|
60B120
Abstract: 2SA671 2SC1061
Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA671 .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf @ ic=2.0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061
|
OCR Scan
|
PDF
|
2SC1061
2SA671
60B120
2SC1061
|
2SA670
Abstract: 2SA671 2SC1061
Text: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency
|
OCR Scan
|
PDF
|
2SA671
T0220
2SC1061
2SA670
2SC1061
|
2SC1061
Abstract: transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061
Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN .designed for use in low frequency power amplifier applications 2SC1061 FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 1 0 V (Max @ I c =2.0A,I b=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A
|
OCR Scan
|
PDF
|
2SA671
2SC1061
transistor 2SC1061
2sC1061 transistor
2SA671
2sc1061 npn transistor
2SC1061 PNP
2SC1061 f
L50C
power Transistor 2SC1061
|
2sc1060
Abstract: 2SC1061 2SA670 2SA671 JE1A to220aa TO-220-AA 2SCI061 TO-220AA
Text: 2 S C 1 6 , 2 S C 1 6 1 v y 3 > NPN h â î tum SILIC O N NPN TRIPLE DIFFUSED_ 2SA670, 2S A 671 ¿: 3 > 7 'J * > £ >J ^< 7 LOW FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2 S A 6 7 0 and 2SA671 2SC 1060 1. ^ X • Base 2. z iv 7 9 '• C o lle c to r
|
OCR Scan
|
PDF
|
2SA670,
2SA671
2SA670
2SC1060
2SC1061
O-220AA)
T0-220AB)
2SC1060,
2SC1061
2sc1060
2SA671
JE1A
to220aa
TO-220-AA
2SCI061
TO-220AA
|
2SC793
Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
PDF
|
2SC633A
2SC634A
2SC1079
2SC1080
2SC1382
2SC793
2SC633A
2SA653
2SC1060
C633A
138B
2SC1061
2SC1213
2SC519
2SC520
|
2sb526
Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
Text: Power Transistors TYPE POLA NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A
|
OCR Scan
|
PDF
|
2SB513A
2SB514
2SB515
2SB523
2SB526
2SB529
2SB566A
2SC789
2SC790
2SC1060
2SD359
2SA816
2SD331
2SD365
|
2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
|
OCR Scan
|
PDF
|
057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
|