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    R7F701390EAFP Renesas Electronics Corporation All-in-one Automotive Safety Microcontrollers for Low-end Chassis System Visit Renesas Electronics Corporation
    R7F701391EAFP Renesas Electronics Corporation All-in-one Automotive Safety Microcontrollers for Low-end Chassis System Visit Renesas Electronics Corporation
    R7F701389EAFP Renesas Electronics Corporation All-in-one Automotive Safety Microcontrollers for Low-end Chassis System Visit Renesas Electronics Corporation
    R7F701388EAFP Renesas Electronics Corporation All-in-one Automotive Safety Microcontrollers for Low-end Chassis System Visit Renesas Electronics Corporation
    10140957-101LF Amphenol Communications Solutions VerIO™ Connector, Input Output Connectors, BulkHead Receptacle for all Interfaces Visit Amphenol Communications Solutions

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    2SC3645

    Abstract: No abstract text available
    Text: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page


    OCR Scan     		PDF 2SA1257 2SA1415 2SA1418 2SA1419 2SA1552 2SA1682 2SA1700 2SA1740 2SA1772 2SA1773 2SC3645

    2SC SERIES TRANSISTORS

    Abstract: Transistors Bipolar Transistors PNP 2SD
    Text: Bipolar transistors-2SC series Bipolar transistors-2SC series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and


    OCR Scan     		PDF

    Bipolar Transistors

    Abstract: 2SC SERIES TRANSISTORS
    Text: Bipolar transistors-2SC series Bipolar transistors-2SC series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and


    OCR Scan     		PDF

    A933A

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.


    OCR Scan     		PDF 2SA1037AK 2SA1576A 2SA1774 2SA933AS 2SA1576A 2SC2412K/ 2SC40S1 4617/2SC 1740S. A933A

    2SC2526

    Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­


    OCR Scan     		PDF 2SC2525 2SC2526 50juA 300jus 2SC2526 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25

    2106a

    Abstract: 2SC4919
    Text: Ordering number: EN 4765 No-4765 //_ SANYO i Il 2SC 4919 NPN E pitaxial P lanar Silicon T ransistor // Muting Circuit Applications F e a tu re s • Very small-sized package perm itting 2SC4919-applied sets to be made sm aller and slim m er.


    OCR Scan     		PDF 2SC4919 2SC4919-applied 2106a 2SC4919

    FT3812

    Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
    Text: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h ­


    OCR Scan     		PDF 2SC2431 2SC2432 FT3812 FT3862 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431

    LT 2105

    Abstract: 2SA1611 2SC4177
    Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SC 4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS • Complementary to 2S A 1611 in millimeters • High DC Current Gain: hpE = 200 TYP. . V qe = 6.0 V , I q = 1.0 mA


    OCR Scan     		PDF 2SC4177 LT 2105 2SA1611 2SC4177

    Untitled

    Abstract: No abstract text available
    Text: 2SA1960 Silicon NPN Epitaxial HITACHI Application • • • • W ide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC 5225. Features • High voltage large current operation.


    OCR Scan     		PDF 2SA1960 ADE-208-392

    2SC5297

    Abstract: EN5291
    Text: Ordering num ber:EN5291 no.5291 1/ 2SC 5297 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i Features • High Speed : = 100ns typ. • High breakdown voltage : Vcbo= 1500V. • High reliability Adoption of HVP process .


    OCR Scan     		PDF EN5291 2SC5297 100ns 2SC5297 EN5291

    2SC3853

    Abstract: 2sa 1489 transistor 2SA1489 FM20 Sanken Transistor Mt 200 sanken audio
    Text: Silicon NPN Triple Diffused Planer ☆ Complement to type 2SA1489 2SC3853 •MT-100 T03P • Outline Drawing 2 Application Example : Audio and General Purpose Electrical Characteristics Absolute Maximum Ratings (Ta=25'C) Symbol 2SC æ 53 VCBO 120 VCEO 80


    OCR Scan     		PDF 2SC3853 2SC3853 2SA1489 T-33-U MT-100 Ta-26 100max 80min 2sa 1489 transistor 2SA1489 FM20 Sanken Transistor Mt 200 sanken audio

    101F

    Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
    Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal


    OCR Scan     		PDF 00QMQ41 ACY23 ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbQS 000404b 101F ACY23V ACY32V Q62901-B1

    Toshiba 2SC3281

    Abstract: 2sc3281 toshiba 2sc3281 transistor toshiba 2SC3281 2SA1302 data 2-21F1A 2SA1302 Toshiba 2Sa1302 2SA1302 transistor 2SA1302 TOSHIBA
    Text: TOSHIBA TRANSISTOR SEM ICO ND UCTO R TOSHIBA TECHNICAL 2SC3281 DATA SILICON NPN TRIPLE DIFFUSED TYPE 2SC 3281 PO W ER A M PLIFIER APPLICATIONS. U nit in mm ;i3.3 t 0.2 • Complementary to 2SA1302 • Recommend for 1Q0W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SC3281 2SA1302 2SC3281 Toshiba 2SC3281 2sc3281 toshiba 2sc3281 transistor toshiba 2SA1302 data 2-21F1A Toshiba 2Sa1302 2SA1302 transistor 2SA1302 TOSHIBA

    SSL-LX509F3SRD

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSF-LXH100M SRD-RP 0.55 [0 .02 2 ] 3.18 [0.125: 5.3 [0.209] 0 4 ,8 5 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2SC [00,191] PARAMETER MIN PEAK WAVELENGTH 6,00 [0 ,2 3 6 ] 3.0Û [0.118] MAX 660 FORWARD VOLTAGE REVERSE VOLTAGE


    OCR Scan     		PDF SSF-LXH100MSRD-RP SSH-LXH100M, SSL-LX509F3SRD, 100fiA SSL-LX509F3SRD

    2SC1729

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB


    OCR Scan     		PDF 2SC1729 2SC1729 175MHz.

    Asy transistor

    Abstract: transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D
    Text: 2SC D • r- 3 7 - o i fl235b05 00QMGÛ7 b « S I E G PNP Transistors for Switching Applications A SY48 A SY70 - SIEMENS A K TI EN GE SE LL SCH AF Not for new design ASY 48 and ASY 70 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case


    OCR Scan     		PDF fl235fc ASY48 ASY70 Q60118-Y82 Q60118-Y48-D Q60118-Y48-E Q60118-Y48-F Q60118-Y81 Q60118-Y70-D Q60118-Y70-E Asy transistor transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that


    OCR Scan     		PDF 2SC1926 2SC1275, P11670EJ1V0DS00

    TIBPAL20L8-30M

    Abstract: TIBPAL20LB
    Text: TIBPAL20L8-30M, TIBPAL20R4-30M, TIBPAL20RG-30M, TIBPAL20RB-30M TIBPAL20LB 25C, TIBPAL20R4 25C, TIBPAL20R6-2SC, TIBPAL20R8 25C LOW-POWER HIGH PERFORMANCE IMPACT PAL CIRCUITS D2920. MAY 1987-REVISED DECEMBER 1987 • • Low-Power, High Performance Reduced Ic e of 1 0 5 m A Max


    OCR Scan     		PDF TIBPAL20L8-30M, TIBPAL20R4-30M, TIBPAL20RG-30M, TIBPAL20RB-30M TIBPAL20LB TIBPAL20R4 TIBPAL20R6-2SC, TIBPAL20R8 D2920. 1987-REVISED TIBPAL20L8-30M

    2005A

    Abstract: 2SC3000 J160 transistor marking JB
    Text: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    OCR Scan     		PDF 2SC3000 2034/2034A SC-43 7tlt17D7b 2005A 2SC3000 J160 transistor marking JB

    2SC3779

    Abstract: U40j 2SC3779 transistor
    Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).


    OCR Scan     		PDF 1954C 2SC3779 SC-51 rO-92 3C-43 2SC3779 U40j 2SC3779 transistor

    D410

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART NUMBER SSS —LX2579IGW—1 60B REV. r - f 2.0 REV. A 5.0 .205 E.C.N. A NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . 0 1 .0 9 .0 7 C.085 ELECTRO-OPTICAL CHARACTERISTICS T* =2SC MIN PARAMETER PEAK WAVELENGTH MAX TYP


    OCR Scan     		PDF LX2579IGWâ 55IPATION DI35EMNATIDN PAR11E5. 50LDERINC D410

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB


    OCR Scan     		PDF 2SC1729 175MHz.

    2SC1970

    Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7


    OCR Scan     		PDF 2SC1970 2SC1970 2sc1970 transistor T-30 parameters S transistor NPN

    C102 M transistor

    Abstract: No abstract text available
    Text: 2SC4725 / 2SC4082 / 2SC3837K 2SC4726 / 2SC4083 / 2SC3838K/ 2SC4043S Transistors I High-Frequency Amplifier Transistor 18V, 1.5GHz 2SC4725 / 2SC4082 / 2SC 3837K •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 ”C ) Ì ) High fr. (fr= 1 .5 G H z )


    OCR Scan     		PDF 2SC4725 2SC4082 2SC3837K 2SC4726 2SC4083 2SC3838K/ 2SC4043S 3837K C102 M transistor