2SB952A Search Results

2SB952A Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SB952A		Panasonic	Silicon PNP epitaxial planar type		Original	PDF
2SB952A		Unknown	Cross Reference Datasheet		Scan	PDF
2SB952A		Unknown	The Transistor Manual (Japanese) 1993		Scan	PDF
2SB952A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SB952A		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2SB952A		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Scan	PDF
2SB952A		Panasonic	Silicon Medium Power Transistors		Scan	PDF

2SB952A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB952A Abstract: 2SB0952 2SB0952A 2SB952 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0952 (2SB952), 2SB0952A (2SB952A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 −40 V 1 −50 2SB0952A −20 Collector-emitter voltage 2SB0952	Original	2002/95/EC) 2SB0952 2SB952) 2SB0952A 2SB952A) 2SB952A 2SB0952 2SB0952A 2SB952	PDF
2SB952 Abstract: 2SB952A Text: Power Transistors 2SB952, 2SB952A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 ● ● Low collector to emitter saturation voltage VCE sat High-speed switching N type package enabling direct soldering of the radiating fin to	Original	2SB952, 2SB952A 2SB952 2SB952 2SB952A	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SB0952 2SB952 , 2SB0952A (2SB952A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 6.0±0.2 1.0±0.1 VCBO Unit −40 V 4.4±0.5 1 −50 2SB0952A −20 Collector-emitter voltage 2SB0952 (Base open) 2SB0952A VCEO Emitter-base voltage (Collector open)	Original	2SB0952 2SB952) 2SB0952A 2SB952A)	PDF
2SB0952A Abstract: 2SB952 2SB0952 2SB952A Text: Power Transistors 2SB0952 2SB952 , 2SB0952A (2SB952A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm VCBO Unit −40 V −20 2 V Collector-emitter voltage 2SB0952 (Base open) 2SB0952A VCEO Emitter-base voltage (Collector open) VEBO −5	Original	2SB0952 2SB952) 2SB0952A 2SB952A) 2SB0952A 2SB952 2SB0952 2SB952A	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0952 (2SB952), 2SB0952A (2SB952A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 6.0±0.2 1.0±0.1 Unit −40 V 4.4±0.5 1 −50 2SB0952A Collector-emitter voltage 2SB0952	Original	2002/95/EC) 2SB0952 2SB952) 2SB0952A 2SB952A) 2SB0952A	PDF
2SB553Y Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15	Original	2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553	PDF
2SB909 Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902 Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125	Original	2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902	PDF
80244C Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553 Text: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0	Original		PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SB952, 2SB952A 2SB952, 2SB952A Silicon PNP Epitaxial Planar Type Package Dimensions Unit ! mm Low Voltage Switching •i Features 3.7max. l.lmr—ax.* 8.? max. 6.5 max. • Low collector-eimitter saturation voltage VcEisau • High speed switching	OCR Scan	2SB952, 2SB952A 2SB952 2SB052A	PDF
2SB952A Abstract: 2SB952 Text: Power Transistors 2SB952, 2SB952A 2 S B 9 52 , 2S B 952A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching U nit : • Features • Low collector-eim itter saturation voltage VcEisau • High speed switching 3.7 max. 8.7 max. . l.lm ax.	OCR Scan	2SB952, 2SB952A 2SB952 Tc-25-C 2SB929/A) 2SB952A	PDF
2SB962 Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942 Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»	OCR Scan	2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB947A 2SB951A 2SB952 2SB952A 2SB962 2SD1288 2SB941A 2SB942	PDF
D1276A Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463	OCR Scan	2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A	PDF
D1274A Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691	OCR Scan	2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398	PDF