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    2SB159 Search Results

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    2SB159 Price and Stock

    ROHM Semiconductor 2SB1590KT146Q

    TRANS PNP 15V 1A SOT346
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    DigiKey 2SB1590KT146Q Cut Tape 5,472 1
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    2SB1590KT146Q Digi-Reel 5,472 1
    • 1 $0.78
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    2SB1590KT146Q Reel 3,000 3,000
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    Mouser Electronics 2SB1590KT146Q 238
    • 1 $0.48
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    Verical 2SB1590KT146Q 1,950 186
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    2SB1590KT146Q 493 186
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    Newark 2SB1590KT146Q Cut Tape 2,950 5
    • 1 $0.364
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    Quest Components 2SB1590KT146Q 1,954
    • 1 $0.775
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    TME 2SB1590KT146Q 1
    • 1 $0.376
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    CoreStaff Co Ltd 2SB1590KT146Q 1,950
    • 1 $0.575
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    2SB1590KT146Q 493
    • 1 $0.575
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    Win Source Electronics 2SB1590KT146Q 17,793
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    Panasonic Electronic Components 2SB15990RL

    TRANS PNP 40V 1.5A MINIP3-F1
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    Panasonic Electronic Components 2SB15990QL

    TRANS PNP 40V 1.5A MINIP3-F1
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    Panasonic Electronic Components 2SB15920RA

    TRANS PNP 25V 3A TO92NL-A1
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    ROHM Semiconductor 2SB1590KT146

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    Quest Components 2SB1590KT146 2,242
    • 1 $0.74
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    2SB159 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB159 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB159 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB159 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB159 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB159 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB159 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB159 Unknown Vintage Transistor Datasheets Scan PDF
    2SB159 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1590 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1590K ROHM Power Transistor (-15V, -1A, 15V, 1A) Original PDF
    2SB1590K ROHM Power Transistor(-15V, -1A) Original PDF
    2SB1590K Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1590KT146Q ROHM Low VCE (sat) Transistor; Package: SMT3; Constitution materials list: Packing style: taping; Package quantity: 3000; Original PDF
    2SB1590KT146Q ROHM Power Transistor (-15 V, -1 A) Original PDF
    2SB1592 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1592 Panasonic PNP Transistor Original PDF
    2SB1592 Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1592 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1592 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1592 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SB159 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment


    Original
    PDF 2002/95/EC) 2SB1599G 2SD2457G

    2SB1599

    Abstract: 2SD2457
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open)


    Original
    PDF 2002/95/EC) 2SB1599 2SD2457 2SB1599 2SD2457

    2SB1592

    Abstract: 2sb15
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1592 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 8.0±0.2 • Features ue pl d in an c


    Original
    PDF 2002/95/EC) 2SB1592 2SB1592 2sb15

    2SB1593

    Abstract: No abstract text available
    Text: Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE sat • Allowing automatic insertion with radial taping 0.85±0.1 1.0±0.1 0.8 C • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2SB1593 2SB1593

    2SB1599

    Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
    Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original
    PDF 2SB1599 2SD2457 2SA699A 50MHz 2SA699 2SB1599 2SA699 2SA699A 2SD2457 2SA699 H

    2SB1599G

    Abstract: 2SD2457G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro


    Original
    PDF 2002/95/EC) 2SB1599G 2SD2457G 2SB1599G 2SD2457G

    Untitled

    Abstract: No abstract text available
    Text: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)


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    PDF 2SB1590K -20mA. 2SD2444K. 2SB1590K

    Untitled

    Abstract: No abstract text available
    Text: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K zFeatures 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1)


    Original
    PDF 2SD2444K 2SB1590K. 2SD2444K

    2sb1590

    Abstract: 2SB1590K 2SD2444K T146
    Text: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)


    Original
    PDF 2SB1590K -20mA. 2SD2444K. 2sb1590 2SB1590K 2SD2444K T146

    2SB1599

    Abstract: 2SD2457
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Rating Unit VCBO −50 V Collector-emitter voltage (Base open)


    Original
    PDF 2002/95/EC) 2SB1599 2SD2457 2SB1599 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping


    Original
    PDF 2002/95/EC) 2SB1593

    2SB1592

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1592 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 8.0±0.2 • Features ue pl d in an c


    Original
    PDF 2002/95/EC) 2SB1592 2SB1592

    2SB1599

    Abstract: 2SD2457
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te


    Original
    PDF 2002/95/EC) 2SB1599 2SD2457 2SB1599 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K Features 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. External dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1) 0.3Min.


    Original
    PDF 2SD2444K 2SB1590K.

    D218

    Abstract: 2SB1590K 2SD2444K B218
    Text: Transistors 2SB1590K 2SD2444K 96-150-B218 (96-247-D218) 293


    Original
    PDF 2SB1590K 2SD2444K 96-150-B218) 96-247-D218) D218 2SB1590K 2SD2444K B218

    2SB1599G

    Abstract: 2SD2457G 2sb15
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For power amplification Complementary to 2SD2457G ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original
    PDF 2002/95/EC) 2SB1599G 2SD2457G 2SB1599G 2SD2457G 2sb15

    2SB1593

    Abstract: 2sb15
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original
    PDF 2002/95/EC) 2SB1593 2SB1593 2sb15

    2SA699

    Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
    Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original
    PDF 2SB1599 2SD2457 2SA699 2SA699A 2SB1599 2SD2457 2SA699 H

    Untitled

    Abstract: No abstract text available
    Text: 2SB1594 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1594 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2449 Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original
    PDF 2SB1594 2SD2449 2-21F1A

    2-21F1A

    Abstract: 2SB1594 2SD2449
    Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) · Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SD2449 2SB1594 2-21F1A 2-21F1A 2SB1594 2SD2449

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    PDF 2SD2449 2SB1594

    2SD2449

    Abstract: 2-21F1A 2SB1594 2sb15
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO


    OCR Scan
    PDF 2SD2449 2SB1594 2SD2449 2-21F1A 2SB1594 2sb15

    2-21F1A

    Abstract: 2SB1594 2SD2449
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SD2449 2SB1594 2-21F1A 2SD2449

    ic 4510

    Abstract: No abstract text available
    Text: TO SH IB A TOSHIBA TRANSISTOR 2SB1594 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2 S B 1 594 Unit in mm .3 + 0.2 20.5M A X • High Breakdown Voltage : V £E O = —160V (Min.) • Complementary to 2SD2449 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SB1594 --160V 2SD2449 ic 4510