2SA2017
Abstract: 2SC5574
Text: 2SA2017 Transistors Power Transistor −80V, −4A 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.
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2SA2017
2SC5574.
2SA2017
2SC5574
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Untitled
Abstract: No abstract text available
Text: 2SA2017 Transistors Power Transistor −80V, −4A 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.
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2SA2017
2SC5574.
2SA2017
O-220FN
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2SA2017
Abstract: 2SC5574
Text: 2SC5574 Transistors Power Transistor 80V, 4A 2SC5574 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area).
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Original
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PDF
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2SC5574
2SA2017.
O-220FN
2SA2017
2SC5574
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2SA2017
Abstract: 2SC5574 Gan transistor
Text: 2SA2017 Transistors Power Transistor -80V, -4A 2SA2017 ! Features 1 ) Low VcE(sat). (Typ. -0 .3 V at Ic / I b = - 2 / -0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Te = 25 °C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.
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OCR Scan
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PDF
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2SA2017
2SC5574.
O-220FN
2SA2017
2SC5574
Gan transistor
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2SC557
Abstract: 2SA2017 2SC5574
Text: 2SC5574 Transistors_ Power Transistor 80V, 4A 2SC5574 •External dimensions (Units : mm) •Features 1) Low saturation voltage. (Typ. VcE(sat) = 0.3V at Ic / I b =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C)
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OCR Scan
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PDF
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2SC5574
2SA2017.
O-220FN
2SC557
2SA2017
2SC5574
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