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    2SA1204 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1204 Kexin Audio Frequency Amplifier Applications Original PDF
    2SA1204 Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-5K1A) Original PDF
    2SA1204 Toshiba PNP transistor Original PDF
    2SA1204 TY Semiconductor Audio Frequency Amplifier Applications - SOT-89 Original PDF
    2SA1204 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1204 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1204 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1204 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1204 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1204 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1204 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1204 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1204 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1204 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SA1204 Toshiba SOT-89 Transistors Scan PDF
    2SA1204 Toshiba Silicon PNP transistor for audio frequency amplifier applications Scan PDF
    2SA1204O Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-5K1A) Original PDF
    2SA1204-O Toshiba 2SA1204 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1204OTE12L Toshiba 2SA1204 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SA1204OTE12R Toshiba 2SA1204 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SA1204 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1204

    Abstract: No abstract text available
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 SC-62 2SA1204

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


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    PDF 2SA1204 2SC2884 -100mA -700mA -500mA -20mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier


    Original
    PDF OT-89-3L OT-89-3L 2SC2884 2SA1204 100mA 700mA 500mA

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 2SA1204 2SC2884

    2SA1204

    Abstract: power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC
    Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original
    PDF 2SA1204 2SC2884 -10mA -100mA -700mA -500mA -20mA 2SA1204 power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC

    Untitled

    Abstract: No abstract text available
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 SC-62

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 2SA1204 2SC2884

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 2SA1204 2SC2884

    2SC2884

    Abstract: No abstract text available
    Text: 2SC2884 0.8A, 35V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package Complementary to 2SA1204 High DC Current Gain 4 1 2 3 A CLASSIFICATION OF hFE


    Original
    PDF 2SC2884 OT-89 2SA1204 2SC2884-Y 2SC2884-O 13-Dec-2013 2SC2884

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1204 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプ出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。


    Original
    PDF 2SA1204 2SC2884 SC-62 2SA1204 2SC2884

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 2SA1204 2SC2884

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original
    PDF 2SA1204 2SC2884 2SA1204 2SC2884

    2SA1204

    Abstract: 2SC2884
    Text: 2SA1204 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1204 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプ出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。


    Original
    PDF 2SA1204 2SC2884 SC-62 20070701-JA 2SA1204 2SC2884

    power transistor audio amplifier 500 watts

    Abstract: 2SA1204 2SC2884
    Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SC2884 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SA1204 Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original
    PDF 2SC2884 2SA1204 100mA 700mA 500mA power transistor audio amplifier 500 watts 2SA1204 2SC2884

    2SA1204

    Abstract: 2SC2884
    Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original
    PDF 2SC2884 2SA1204 2SA1204 2SC2884

    2SA1204

    Abstract: 2SC2884 A1204 TA155
    Text: TOSHIBA 2SA1204 2 S A 1 204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan
    PDF 2SA1204 2SC2884 961001EAA2' 2SA1204 2SC2884 A1204 TA155

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1204 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 4.6 m a x . 1.7 MAX. FEATURES: Q4±a05 . 3 = . High DC Current Gain : hFE=1 0 0 ~ 3 2 0 . Suitable for Output Stage of 1 Watts Amplifier . PC= 1 ~ 2 W Mounted on Ceramic Substrate


    OCR Scan
    PDF 2SA1204 a45-ao5 2SC2884 a4-Q05 -10mA, -100mA -700mA -500mA, -20mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 SA 1 2 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS Unit in mm 1 .6 M A X . —J- - 4 .6 M A X . High DC Current Gain : 1if e = 100~320 1 .7 M A X . 0 .4 + 0 .0 5 i Suitable for Output Stage of 1 Watts Amplifier


    OCR Scan
    PDF 2SA1204 2SC2884

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL DATA 2 SA1204 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1204) Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • • High DO Current Gain : —100—320 Suitable for Output Stage of 1 Watts Amplifier


    OCR Scan
    PDF SA1204 2SA1204) 2SC2884

    2SA1204

    Abstract: 2SC2884 A1204
    Text: 2SA1204 TOSHIBA 2 S A 1 204 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY A M PLIFIER APPLICATIONS High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan
    PDF 2SA1204 2SC2884 2SA1204 2SC2884 A1204

    A1204

    Abstract: 2SA1204 2SC2884
    Text: 2SA1204 TOSHIBA 2 S A 1 204 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY A M PLIFIER APPLICATIONS High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan
    PDF 2SA1204 2SC2884 A1204 2SA1204 2SC2884

    ta31087

    Abstract: No abstract text available
    Text: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM REGULATOR 1C FOR CORDLESS TELEPHONE 2 independent regulators and m icrocom puter pow er on a chip, very suitable fo r a handset o f cordless telephone. FEATURES • W atch-dog-tim er fun ction • 2 independent regulators


    OCR Scan
    PDF SSOP16 TA31087FN-1 TA31087FN-5 ta31087

    Untitled

    Abstract: No abstract text available
    Text: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l


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    PDF OT-89 250mmJ 2SC2883 2SC2884 2SC2873 2SC2982 2SA1203 2SA1204 2SA1213 2SA1314

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737