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    2SA1162 PNP Search Results

    2SA1162 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    2SA1162 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1162

    Abstract: 2SA1162G 2SA1162O
    Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.


    Original     		PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR OT-23 15Watts -100uAdc, -50Vdc 2SA1162G 2SA1162O

    2SA1162Y

    Abstract: 2SA1162
    Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.


    Original     		PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162Y 2SA1162

    Untitled

    Abstract: No abstract text available
    Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1162 2SC2712

    Untitled

    Abstract: No abstract text available
    Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1162 2SC2712

    2SA1162

    Abstract: No abstract text available
    Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1162 2SC2712 2SA1162

    2SA1162

    Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
    Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.


    Original     		PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1162 2SC2712

    2SA1162

    Abstract: 2SC2712
    Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1162 2SC2712 2SA1162 2SC2712

    2SA1162GR

    Abstract: 2SA1162-G
    Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor


    Original     		PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 -100uAdc, 2SA1162GR 2SA1162-G

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor


    Original     		PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.


    Original     		PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23

    2SA1162

    Abstract: 2SA1162 PNP 2SC2712
    Text: 2SA1162 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1162 ○ 低周波増幅用 ○ 低周波低雑音増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) : VCEO = −50 V


    Original     		PDF 2SA1162 2SC2712 O-236MOD SC-59 2SA1162 2SA1162 PNP 2SC2712

    MARKING SY SOT23

    Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO

    Untitled

    Abstract: No abstract text available
    Text: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package


    Original     		PDF 2SA1162 OT-23 2SC2712. -100mA, -10mA 22-Oct-2009

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23 2SA1162 2SC2712. -100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1162 TRANSISTOR PNP FEATURES z Low noise: NF=1dB(Typ.)10dB(Max.) z Complementary to 2SC2712 z Small package 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SA1162 2SC2712 -100mA -10mA 2SA1162

    2SA1162

    Abstract: 2SC2712
    Text: 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:V CE =-45 V 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2SA1162 OT-23 2SC2712 -100mA -100mA, -10mA 300uS 2SA1162 2SC2712

    marking SG transistors

    Abstract: A0 SOT 2SA1162
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150


    Original     		PDF OT-23-3L OT-23-3L 2SA1162 -100mA, -10mA marking SG transistors A0 SOT 2SA1162

    2SA1162

    Abstract: 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
    Text: 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES   SOT-23 Low Noise: NF=1 dB Typ. , 10 dB(Max.) Complements of the 2SC2712 A L 3


    Original     		PDF 2SA1162 OT-23 2SC2712 OT-23, 2SA1162-O 2SA1162-Y 2SA1162-GR -100A, -100mA, -10mA 2SA1162 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23

    2SA1162

    Abstract: 2SC2712
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712

    SY SOT23

    Abstract: SG SOT23 MARKING MARKING sg SOT23
    Text: 2SA1162 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — — — Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SA1162 OT-23 OT-23 2SC2712 -100A -100mA -10mA SY SOT23 SG SOT23 MARKING MARKING sg SOT23

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1162 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. U nit in mm + 0.5 • High Voltage and High Current : V q e O “ —50V, IC ——150mA (Max.) 3.5-as •I 0.ÍÍ5


    OCR Scan     		PDF 2SA1162 --50V, ----150mA 2SC2712 961001EAA2'

    MARKING LODB

    Abstract: 2SA1162
    Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES: • High Voltage and High Current. V c EO=50V, Ic=150mA Unit (Max.) in nun +0.5 • Excellent hFE Linearity


    OCR Scan     		PDF 2SA1162 150mA -100mA, -10mA 10kfl MARKING LODB 2SA1162

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1162 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process + 0 .5 2.5-0.3 +0. 2 5 1.5-0.15 Audio Frequency General Purpose •o M - M Amplifier Applications Features • High Voltage and High Current. - VCE0 = -50V (Min.), Ic = -150mA (Max.)


    OCR Scan     		PDF 2SA1162 -150mA 2SC2712