Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1020 TRANSISTOR Search Results

    2SA1020 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1020 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC= -1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020G-x-AE3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K OT-23

    pnp transistor a1020

    Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba

    2sa1020

    Abstract: 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. „ FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020L-x-AB3-R 2SA1020L-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-AE3-R OT-23 2SA1020G-x-AB3-R 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G

    pnp transistor a1020

    Abstract: A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SA1020 2SC2655 150lled pnp transistor a1020 A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor

    2SA1020L

    Abstract: 2SA1020 TO92NL 2SA1020L UTC TO-92NL 2sc2655 SOT89 Complement 2sc2655 2SC2655 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A transistor 2SA1020
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES 1 *Low collector saturation voltage: VCE SAT =-0.5V(max.) (IC=-1A)


    Original     		PDF 2SA1020 OT-89 2SA1020 2SC2655 O-92NL 2SA1020L 2SA1020-x-AB3-R 2SA1020L-x-AB3-R 2SA1020-x-T9N-B 2SA1020L-x-T9N-B 2SA1020L TO92NL 2SA1020L UTC TO-92NL 2sc2655 SOT89 Complement 2sc2655 2SC2655 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A transistor 2SA1020

    2SA1020L UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020L UTC

    2SA1020

    Abstract: 2SC2655 2sc2655 SOT
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		PDF 2SA1020 2SA1020 2SC2655 OT-89 250mm2 QW-R208-021 2SC2655 2sc2655 SOT

    2SA1020

    Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A pnp transistor 2sa1020 50V 1A PNP power transistor transistor pnp 1a
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES 1 *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		PDF 2SA1020 2SA1020 2SC2655 O-92NL QW-R211-007 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A pnp transistor 2sa1020 50V 1A PNP power transistor transistor pnp 1a

    equivalent 2SC2655

    Abstract: 2SA1020 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		PDF 2SA1020 2SA1020 2SC2655 OT-89 250mm2 250mm2 QW-R208-021 equivalent 2SC2655 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A

    2SA1020

    Abstract: No abstract text available
    Text: 2SA1020 2SA1020 TO-92MOD TRANSISTOR PNP FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 900 mW (Tamb=25℃) 3. BASE Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SA1020 O-92MOD 2SA1020

    TRANSISTOR, 2SA1020Y

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1020 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power Amplifier Applications 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF O-92L 2SA1020 O-92L TRANSISTOR, 2SA1020Y

    2SA1020

    Abstract: No abstract text available
    Text: ST 2SA1020 PNP Silicon Epitaxial Transistor POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low Collector Saturation Voltage VCE sat =-0.5V (Max.) (IC=-1A) High Speed Switching Time Tstg=1.0us (Typ.) TO-92 Plastic Package Weight approx. 0.19g


    Original     		PDF 2SA1020 2SA1020

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA1020-O 2SA1020-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF 2SA1020-O 2SA1020-Y

    2SA1020

    Abstract: 2SA1020G 2SA1020RLRA 2SA1020RLRAG 2SA JAPAN TRANSISTOR MANUAL
    Text: 2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCE 50 Vdc Collector −Base Voltage VCB 50 Vdc Emitter −Base Voltage


    Original     		PDF 2SA1020 2SA1020/D 2SA1020 2SA1020G 2SA1020RLRA 2SA1020RLRAG 2SA JAPAN TRANSISTOR MANUAL

    2SA1020 Transistor

    Abstract: 2SA1020
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1020 TRANSISTOR PNP TO-92MOD 1. EMITTER FEATURES Power amplifier applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF O-92MOD 2SA1020 O-92MOD -50mA -500mA 2SA1020 2SA1020 Transistor

    2SA1020

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1020 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power amplifier applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF O-92L 2SA1020 O-92L -50mA -500mA 2SA1020

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020


    Original     		PDF O-92MOD 2SC2655 O-92MOD 2SA1020 500mA

    2SA1020

    Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: ST 2SA1020 PNP Silicon Epitaxial Transistor POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low Collector Saturation Voltage VCE sat =-0.5V (Max.) (IC=-1A) High Speed Switching Time Tstg=1.0us (Typ.) TO-92 Plastic Package Weight approx. 0.19g


    Original     		PDF 2SA1020 2SA1020 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A

    2SA1020Y

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA1020-O 2SA1020-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF 2SA1020-O 2SA1020-Y -10mAdc, -100uAdc, -100mAdc, -50Vdc, 2SA1020Y

    2SA1020

    Abstract: No abstract text available
    Text: ST 2SA1020 PNP Silicon Epitaxial Transistor Power amplifier application Power switching application 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage


    Original     		PDF 2SA1020 2SA1020

    2sc2655

    Abstract: equivalent 2SC2655 2SA1020
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020


    Original     		PDF O-92MOD 2SC2655 O-92MOD 2SA1020 500mA 2sc2655 equivalent 2SC2655 2SA1020