2SC1213
Abstract: 2sc1213a
Text: 2SC1213,2SC1213A Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SA 673 and 2SA 673A Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 u 1 Í j 306 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C)
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2SC1213
2SC1213A
2SC1213,
2SC1213A
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Untitled
Abstract: No abstract text available
Text: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD I ^2 3 1. Em itter 2. Collector 3. Base 2SA 743, 2SA 743A Absolute Maximum Ratings Ta = 25 °C
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2SA743,
2SA743A
2SC1212
2SC1212A
O-126
2SA743
2SA743
2SA743A
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022sa
Abstract: 1733K A1733K 2SA1733
Text: 2SA1733K/2SA1808 h ~7> v 7, $ / T ransistors 2SA 1733K 2SA 1808 — PNP y lj 3 > t ' 7 > y Z $ Epitaxial Planar PNP Silicon Transistor Amplifier h 7 1 2S A 1733K 1.9+ 0.2 0.8±0. i o . 95 O .s s j • Features < )in > ÿ 2S A 1808 2.9±0.2 2) I 1 ) Emitter
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2SA1733K/2SA1808
1733K
1733K
SC-59
SC-70
2SA1733K/2SA1808
022sa
A1733K
2SA1733
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2SA495
Abstract: sk a 3050 c 2SC373 2SA495-Y 2SA495Y 2SC372 transistor 2sc373 transistor 2SC372 2sa495 toshiba 2SA495G
Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA PROCESS , ii ° High Frequency Amplifier ° High Speed Switching Applications 2SC372 2SC373 @ t ^ > T- ') * 's * a : fT = : VcE(sat) A -f y *S- -S Complementary INDUSTRIAL APPLICATIONS Applications = 200Wiz -0.2V (Typ.)
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3SC37Z
2SC373
200WIz
250ns
2SC372Â
2SC373Â
2sa495g
2SA495
sk a 3050 c
2SC373
2SA495-Y
2SA495Y
2SC372
transistor 2sc373
transistor 2SC372
2sa495 toshiba
2SA495G
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Untitled
Abstract: No abstract text available
Text: H ITACH I 2SC5225-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA 1960. Features
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2SC5225-------Silicon
2SC5225
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2SA amplifier
Abstract: 2SA673
Text: HITACHI 2SA673, 2SA673A SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SC1213 and 2SC1213A ] ao :rr:r:zr|.:T a 1. Emitter • »! 2. Orvitecior 5. Base {Dimensions in mm) JEDEC TO-92) I ABSOLUTE MAXIMUM RATINGS <T*=25°C> item 2SA 673
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2SA673,
2SA673A
2SC1213
2SC1213A
2SA67}
2SA amplifier
2SA673
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2S0187
Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Text: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®
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2SB1000
2SB1000A
2SB1001
2SB1002
2SB1026
2SB1027
2SB1028
2SB1518
2SB1519
2SB1520
2S0187
transistor 2SC460
2SB637
ok01
2Sd763
2SC1472
transistor 2sc454
transistor 2sb1028
2SA1666
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2-7D101A
Abstract: 2SA1426 2SC3666
Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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2SA1426
SA142
2SC3666.
2-7D101A
2-7D101A
2SA1426
2SC3666
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Untitled
Abstract: No abstract text available
Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SA1426
2SC3666.
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2SA594
Abstract: FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178
Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA 594 PROCESSJj ii ft X * ffl INDUSTRIAL APPLICATIONS o o High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications Unit in mm : 3 u- ?»S ft i >1 %W 5 94 ¿3X7"! fT = 2,00MHz ( T y p .)
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2sa594
200MHz
2SC594
2SA594
FT1D
2SC594
Produced by Perfect Crystal Device Technology
CC178
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transistor 2SA
Abstract: No abstract text available
Text: TO SH IB A 2SC4689 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC4689 I 15.8 + 0.5 i • C om plem entary to 2SA 1804 • Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. MAXIMUM RATINGS Ta = 25°C
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2SC4689
961001EAA2'
transistor 2SA
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2SC1775
Abstract: 2SC1775A 2sa 872
Text: 2SC1775,2SC1775A Silicon NPN Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SA 872/A Outline TO-92 1 i fa ! I 3 350 I 2 1. Emitter 2. Collector 3. Base 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25°C)
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2SC1775
2SC1775A
872/A
2SC1775,
2SC1775
2SC1775A
2sa 872
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2SA1804
Abstract: 2SC4689 y25I
Text: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.810.5 i 0 3.6 ±0.2 Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 3.5 MAXIMUM RATINGS Tc = 25°C
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2SA1804
2SC4689
2-16F1A
2SA1804
2SC4689
y25I
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Untitled
Abstract: No abstract text available
Text: 2SD1209 K Silicon NPN Epitaxial, Darlington HITACHI Application • Low frequency power amplifier • Complementary pair with 2SA 1193(K) Outline TO-92MOD 2 9 3 1. Emitter 2. Collector 3. Base o- Ô 904 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item
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2SD1209
O-92MOD
10001o
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2SA1193
Abstract: circuit mri amplifier
Text: HITACHI 2SA1193 K SILICON PNP EPITAXIAL HIGH GAiN AMPLIFIER . E m ititr 1. Collrctor 3-. Bnie (Dimensions in mm) (JEDEC TO'92 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS <Ta-25°C) 2SA 11 93 Unit VCBO -«0 V Collector to emitter voltage
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2SA1193
2SA1193Â
2SA1193
circuit mri amplifier
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Ge 2sa
Abstract: 2SA743A A743A 2SA743
Text: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline T O -1 2 6 M O D I 12 1. Emitter 2. Collector 3. Base 2SA 743, 2S A 743A Absolute Maximum Ratings Ta = 25 °C
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2SA743,
2SA743A
2SC1212
2SC1212A
2SA743
Ge 2sa
2SA743A
A743A
2SA743
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2SA1804
Abstract: 2SC4689 111s1
Text: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.8±0.5 i Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 0 3 .6 Í0 .2 3.5 MAXIMUM RATINGS Ta = 25°C
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2SA1804
2SC4689
2SA1804
2SC4689
111s1
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2SC1226
Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Text: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A
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2SC1226,
2SC1226A
2SA699,
2SA699A
2SC1226
335Panasonic
2SA699
2SA699A
2SC1226A
2SA699 H
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in mm PO W ER AM PLIFIER APPLICATIONS I 15.8 + 0.5 i • C o m plem entary to 2SA 1803 • Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. M A XIM U M RATINGS Ta = 25°C
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2SC4688
961001EAA2'
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transistor 2SA
Abstract: 2SA940 AC550 2sa 940 2SC2073
Text: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073
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2SC2073
220AB
AC550
-120v,
-500mA,
IHJ11
-500ma
2sa940
transistor 2SA
2SA940
AC550
2sa 940
2SC2073
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Untitled
Abstract: No abstract text available
Text: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions Units : mm • available in SM T3 (SMT, SC -59) and U M T3 (UNIT, SC -70) packages • package marking: 2SA 1036K and 2SA1577; (-!★, where ★ is hFE code • large collector current: ^C(max) = - 500 mA
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2SA1036K
2SA1577
1036K
2SA1577;
2SA1036K
29x02
10x02
08x01
2SA1036K,
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2SA1264
Abstract: 2SA1264N 2SC3181N 8 open colector output
Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1264N D E S C R IP TIO N • W ith TO -3P l package • Com plem ent to type 2S C 3181N • 2SA1264 with short pin A P P LIC A TIO N S • Pow er amplifier applications PINNING
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2SA1264N
2SC3181N
2SA1264
2SC3181N
8 open colector output
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TOSHIBA 2N3055
Abstract: Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor ST100Q22 HF VHF power amplifier module transistor bf422 fet
Text: 2.1 A Transistors C) EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2 SC 780 1st 2nd ST100Q22 3rd SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2.2 (Example) T ype 2SA PNP high-frequency use 2SB PNP low -frequency use
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ST100Q22
2N3055
BF422
BU208
TOSHIBA 2N3055
Transistor 2SA 2SB 2SC 2SD
2n3055 npn transistor toshiba
2N3055 TOSHIBA
2N3055 ST
transistors 2SA
pnp vhf transistor
HF VHF power amplifier module
transistor bf422 fet
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2SA992
Abstract: 2SC1845 PA33
Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA992 The 2SA 992 is best for use as the middle range am plifier in Hi-Fi stereo control amplifiers, power amplifiers, and etc. PACKAG E D IM E N S IO N S in millimeters inches FEATURES • High Voltage. V qeo
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2SA992
2SA992
2SC1845.
2SC1845
PA33
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