B0719
Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH
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BU4080
BU606
O-220var
O-220AB
O-220
B0719
G80120
2N5849
2SC3254Q
2S0635
2N6455
2S0119
2SC793
BU6070
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042c1
Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141
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2SC643A
2SC1892
S01530
2S0898
TRM2014
TRM2504
TRM3014
TRM3504
TRM4014
042c1
2S090
SSP62
mrf486
2S0882
2sc2906
042C3
B0329
THA13
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b0725
Abstract: 2SC2576 BU4090 2S01467 2S0141 2S0323 bu407F
Text: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 40 ~~~~:~J 2N5426 2N5476 2S01257 2S01271 2S01362 2S01411 2S0643 2S06430 2SD1237Q 2S01907 2S0569K 2S01237R 2S0643Y 2S01237S 1001416 100634 2S01356 250634 2SC697 2S0316 2S0316 2S0336 RCA1B06 2SC1666
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2S01467
BU407F
BU407H
BU4090
BU409
BU407
2SC3590
2SC3173
b0725
2SC2576
2S0141
2S0323
bu407F
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BOX53
Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp
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MPSU45
2S01413
2S0687
2N6037
MJE3300
6037Y
SOM3300
SOM3303
BOX53
BOW83
NSOU45
PM016K40
BD875
MPS-U45
Motorola MPSU45
BSS50 SOT
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b0333
Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J
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U2T201
2N6352
2S01169
2S01315
SGS121
TIP121
TIP621
MJE1102
b0333
box53b
044E3
BOW93B
b0647
BOX67A
BOT63A
BOT65A
2N605B
B0699
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npn 100n 1a
Abstract: KT922A 2N2650 STXB 2S01733 motorola diode 2n3253 750M10 2n697a 2S0774
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 Natl Semi See Index Micro Elecs Natl Semi See Index V/O Electro Elec Trans Solid Stlnc Sanyo Elect PhilipsElec Philips~!ec 25 30 35 40 45 :'U 55 60 65 - 70 75 - 80 85 9U PhilipsElec See Index Semelab NthAmerSemi
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TN221BA
2N55B1
TN2219A
2N55B2
KT922A
2SCB22
2SC822
2SC37BO
BLX97
npn 100n 1a
2N2650
STXB
2S01733
motorola diode
2n3253
750M10
2n697a
2S0774
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B0677A
Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301
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2S01164Z
SON301
U2T301
SON401
U2T401
2S01764
B0677A
B0677 a
B0331
BOW53A
b0263
75G60
2S01275
MJ4000
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2SD1410
Abstract: 2S0141
Text: SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2ÍQ.2 FEATURES: . High DC Current Gain : hp£= 2000(Min.) (Vce= 2V, Ic= 2A) MAXIMUM RATINGS (Ta=25°C)
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2SD1410
20/is
2S01410
2SD1410
2S0141
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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