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    2SA708 NEC

    Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03


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    PDF D29E9 TP5821 BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L 2SA708 NEC MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


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    PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    Untitled

    Abstract: No abstract text available
    Text: Maximum Ratings Type No. 2N5088 ^CBO ^CEO V Min <V) Min 35 30 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) beo ?D m (A) (V) Min 0Tc=26°c 5 ^CB 'c e s ^CE " fe (PA) @(V) (UA) (V) Max Max Min 0.625 0.05 0.05 20 300 350 300 'c&


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    PDF 2N5088 2N5127

    Npn 310

    Abstract: No abstract text available
    Text: INTEX/ SENITRONICS 27E D • MfibTSma jo m iu u ii GD0 Ü5 Ö3 fi ■ 7 ^ < Z 7 - 0 / Semitronics Corp. SEMICONDUCTORS TO-92 transistors Maximum Ratings Type Packtge D iv « Hfe Min/Max VCE Sat 3 Iç/la Volts mA/mA Cch pF Mas _ _ . _ 2N3903 2N3904 2N3905


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4264 2N4265 Npn 310

    2N5133

    Abstract: 2N5133 transistor 2N5136 2N5088 2N5127 2N5128 2N5129 2N5130 2N5131 2N5132
    Text: Maximum Ratings Type No. 2N5088 ^CBO ^CEO V <V) Min Min 35 30 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ?D m (A) (V) Min 0Tc=26°c 5 beo ^CB ' c e s ^CE " fe 'c& (PA) @(V) (UA) (V) (mA) Max Max Min Max 0.625 0.05 0.05 20 300


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    PDF 2N5088 2N5127 2N5128 2N5129 2N5133 2N5133 transistor 2N5136 2N5130 2N5131 2N5132

    ST3904

    Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
    Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.


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