2N918 JANTX
Abstract: 2n918 die 2N918 2N918UB HP343A 2N918 thermal resistance 2N918 JANS 2n918 set L-41000
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May, 2002. MIL-PRF-19500/301F 16 February, 2002 SUPERSEDING MIL-PRF-19500/301E 4 October 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER
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MIL-PRF-19500/301F
MIL-PRF-19500/301E
2N918
2N918UB
MIL-PRF-19500
2N918 JANTX
2n918 die
2N918UB
HP343A
2N918 thermal resistance
2N918 JANS
2n918 set
L-41000
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874-D20
Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,
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MIL-PRF-19500/301K
MIL-PRF-19500/301J
2N918
2N918UB,
MIL-PRF-19500.
874-D20
transformer JS 0432
d 2037 transistor
2n918 die
2N918UB
2N918 thermal resistance
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Untitled
Abstract: No abstract text available
Text: DAC10–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol @ VS = ؎15 V; IREF = 2 mA; 0؇C ≤ TA ≤ +70؇C for DAC10F and G, unless otherwise noted. Output characteristics apply to both IOUT and IOUT. Conditions Min MONOTONICITY DAC10F Typ Max
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DAC10â
DAC10F
DAC10F
DAC10G
18-Lead
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DAC10FX
Abstract: C3134 in5711 equivalent DAC10
Text: DAC10–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol @ VS = ؎15 V; IREF = 2 mA; 0؇C ≤ TA ≤ +70؇C for DAC10F and G, unless otherwise noted. Output characteristics apply to both IOUT and IOUT. Conditions Min MONOTONICITY DAC10F Typ Max
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DAC10
18-Lead
C3134
DAC10FX
in5711 equivalent
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DAC10
Abstract: DAC10FX DAC10BX
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
e10-Bit
DAC10BX
DAC10BX/883C
DAC10FX
DAC10GP
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IFR 740
Abstract: IN5711 DAC10 DAC10FX DAC10GP DAC10GS DAC10GX 2N918s MA231
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
18-Lead
IFR 740
IN5711
DAC10FX
DAC10GP
DAC10GS
DAC10GX
2N918s
MA231
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dac10
Abstract: DAC10FX 2n918 die dac10bx
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
DAC10FX
2n918 die
dac10bx
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ECG transistor replacement guide book free
Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a
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UG-309
UG-201
UG-349
UG-1034
UG-146
UG-83
UG-318
UG-273
UG-255
ECG transistor replacement guide book free
ecg semiconductors master replacement guide
philips ecg master replacement guide
Diode Equivalent 1N34A
philips ecg semiconductors master replacement guide
RCA SK CROSS-REFERENCE
ecg philips semiconductor master book
ECG NTE semiconductor manual
transistor to220 ph on 588 5v
rca 40673
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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2N918
Abstract: 2N3600 RCA-2N918 874-LA N3600 LA 4303 TO72 package RCA-2N3600 RCA Transistor 2n918 transistor
Text: File No. 83 R F Pow er T r a n s is t o r s Solid State Di vision 2 N 918 2 N3600 RCA-2N918 and RCA-2N3IÏ00 are double-diffused epitaxial planar tran sisto rs o f the silicon n-p-n type. They are extremely useful in low -noise-am plifier, o sc il lator, and converter applications at VHF frequencies.
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2N918
N3600
RCA-2N918
RCA-2N3600
2N918
2N3600
2N3600
874-LA
N3600
LA 4303
TO72 package
RCA Transistor
2n918 transistor
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Untitled
Abstract: No abstract text available
Text: TYPE 2N918 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 7 3 1 1 9 8 9 , M A R C H 1 9 7 3 FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • Low Noise Figure . . . 6 dB max at 60 MHz • High Neutralized Power Gain . . . 15 dB min at 200 MHz
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2N918
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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UM1 L1
Abstract: No abstract text available
Text: NEWBRIDGE MICROSYSTEMS ESE D • bSññlQl OOOOTOG O ■ CA408/CA411 FM RECEIVER CHIP SET FOR DATA = Wide supply voltage range 1.8 - 6.0 volts Single cell operation down to 0.9 volts using external Inverter and on-chlp regulator circuitry Strobed operation for prolonged battery life
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CA408/CA411
200MHz
180pF
10jiF
2N5087
2N918
294SN-A057HM)
SS163-12)
OK02945N-0199AQ)
UM1 L1
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2N6429 equivalent
Abstract: equivalent transistor of F2B transistor CA411 2n6429
Text: CfìL CA408/CA411 FM RECEIVER CHIP SET FOR DATA The CA408/CA411 chip set is a low power radio receiver for FM data transmission systems. Receiver simplicity and cost efficiency are achieved by using a direct conversion technique that converts VHF directly to audio.
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CA408/CA411
200MHz
294SN-A057HM)
100pF
30jiH
Coilcraftssl63-12)
10jiF
Coilcraftssl65-24)
2N6429 equivalent
equivalent transistor of F2B transistor
CA411
2n6429
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equivalent transistor of F2B transistor
Abstract: 2N6429 equivalent
Text: CRUMB CA408/CA411 FM RECEIVER CHIP SET FOR DATA The CA408/CA411 chip set is a low power radio receiver for FM data transmission systems. Receiver simplicity and cost efficiency are achieved by using a direct conversion technique that converts V H F directly to audio.
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CA408/CA411
CA408/CA411
100pF
294SN-A057HM)
oilcraftssl63-12)
F867-1-06)
IN5817)
ftssl65-24)
2945N-0199AQ)
equivalent transistor of F2B transistor
2N6429 equivalent
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hy 1607
Abstract: tuned amplifier tetrode transistor 2N918 two transistors yl 1110 2N918 motorola 2n918 transistor ScansUX1007 analysis and design of multiple tuned amplifier
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL INFORMATION T u n e d A m p lifie r D e s i g n with M o t o r o la ’s M C l l lO In te g r a te d Circuit A m p lifie r J O H N J. R O B E R T S O N , Project Leader, Communications Circuit Research and Development INTRODUCTION
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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