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    2N6560 Search Results

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    2N6560 Price and Stock

    Microchip Technology Inc 2N6560

    POWER BJT
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    DigiKey 2N6560 Bulk 100
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    Avnet Americas 2N6560 Bulk 36 Weeks 100
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    Mouser Electronics 2N6560
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    Microchip Technology Inc 2N6560 36 Weeks
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    Onlinecomponents.com 2N6560
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    NAC 2N6560 2
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    Master Electronics 2N6560
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    Solitron Devices Inc 2N6560

    TRANSISTOR,BJT,NPN,450V V(BR)CEO,10A I(C),TO-3
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    Quest Components 2N6560 2
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    2N6560 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6560 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=450 / Ic=10 / Hfe=10-40 / fT(Hz)=10M / Pwr(W)=220 Original PDF
    2N6560 Diode Transistor Transistor Short Form Data Scan PDF
    2N6560 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6560 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6560 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6560 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6560 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6560 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6560 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6560 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6560 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N6560 PPC Products Transistor Short Form Data Scan PDF
    2N6560 PPC Products Transistor Selection Guide Scan PDF
    2N6560 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF
    2N6560 Solitron Devices Planar Power Transistor Scan PDF

    2N6560 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6560

    Abstract: No abstract text available
    Text: 2N6560 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6560 O204AA) 16-Jul-02 2n6560

    SDT96309

    Abstract: SDT13305 SDT12303 SDT12302 2n6561 SDT13301 SDT13302 SDT13303 2N6546 2N6547
    Text: V PT @ 1C CE @ IC 1TMHz Polarity sus (Peak) MIN/ (sat) (W) VOLTS AMPS MAX AMPS MAX AMPS MIN. MAX. 10/ 2N6546 * NPN 300 30 5.0 1.50 10.0 6.0 175 60 12/ 2N6547 * NPN 400 30 5.0 1.50 10.0 6.0 175 60 10/ 2N6560 NPN 450 15 5.0 0.75 5.0 10.0 220 40 10/ 2N6561


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    PDF 2N6546 2N6547 2N6560 2N6561 SDT02353 SDT02354 SDT02355 SDT12301 SDT12302 SDT12303 SDT96309 SDT13305 SDT12303 SDT12302 2n6561 SDT13301 SDT13302 SDT13303 2N6546 2N6547

    2N6560

    Abstract: No abstract text available
    Text: 2N6560 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6560 O204AA) 31-Jul-02 2N6560

    2n6560

    Abstract: 10M40
    Text: 2N6560 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6560 O204AA) 18-Jun-02 2n6560 10M40

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


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    PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    TIS84

    Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
    Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125


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    PDF TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    LT049

    Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .


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    PDF BUT12A 2N6581 2N6584 2N6587 2N6590 BUW26 TIPL765A 2N6752 SDT13204 LT049 LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03

    pnp 400v 10a

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N697." Top of Page Semelab Home If you are unable to find a suitable part, please contact us. [26-Mar-2002 12:28:58 PM] Datasheets are downloaded


    Original
    PDF 2N697. 2N6500" 2N6500 2N6500-JQR-B 60MHz 5/10m pnp 400v 10a

    2N6575

    Abstract: MJ13014 2N6583 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543
    Text: Type* PUP Comp] •- VUO tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan
    PDF 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6575 MJ13014 2N6583

    2N5804

    Abstract: 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2N6546 2N6547
    Text: Type* PUP Comp] •- VU0 tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


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    PDF 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6547

    SDT96309

    Abstract: sdt96
    Text: -j/otttron_^ Eom gir ©at&ìl©© S W IT C H T R O N P O W E R T R A N S IS T O R S Devices. Inc DEVICE POLARITY TYPE v C EO su s 'C ( P .i k ) hpj; & 'c VC E (sat) ifM H j PT (W ) V O LTS AM PS MIN/MAX AM PS M AX. A M PS MIN. MAX 30


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    PDF 2N6546* 2N6547* 2N6560 2N6561 SDT02353 SDT02354 SDT02355 SDT12301 SDT12302 SDT12303 SDT96309 sdt96

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


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    PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS


    OCR Scan
    PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


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    PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    2N6583

    Abstract: 2N6736
    Text: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469


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    PDF 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281 2N6314 2N6338 2N6339 2N6340 2N6583 2N6736

    2N6562

    Abstract: 2N6583 2N6560 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546
    Text: C 1IP 1 PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN V OLTAGE S NPN SAT . VO LTA GES M ax. h F: E CASE V CB V CE V EB V CE (V) 'c (A) M in . Max. >C (A) 'b (A) V CE (V) V BE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400


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    PDF 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546 2N6547 2N6560 2N6561 2N6562 2N6583

    5005K

    Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
    Text: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437


    OCR Scan
    PDF 2N6385 lk-20k 2N6394 750-18k 2N6395 2N6408 2N6414 2N6420 10min 5005K 2N6575 2N6587 2N65 2N6534 2N6583 NPN 1K

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2N6531B

    Abstract: 2N660 2N6587 2N6558S 2N6584
    Text: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4


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    PDF 2N6497 2N6498 2N6499 2N6500 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 2N660 2N6587 2N6558S 2N6584

    TO114

    Abstract: No abstract text available
    Text: SOLITRON DEVICES "is INC de -ÆsiZran I ö3bßboa pmmw&ï ä t t ä l © Devices. Inc. SWITCHTROIM POW ER TRANSISTORS v CEO(sus VOLTS •C(Peak) AMPS hpE @ •c MIN/MAX AMPS NPN NPN NPN NPN PNP 300 400 450 300 -300 30 30 15 20 -15 10/60 12/60 10/40 10/50


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    PDF SDT02354 SDT02355 SDT12301 SDT12302 SDT12303 SDT13301 SDT13302 SDT13303 SDT13304 SDT13305 TO114