2N5660J |
|
Semico
|
Package = TO-66, Level = Jantxv, Vceo (V) = 200, Vcbo (V) = 250, Vebo (V) = 6.0, Ic (A) = 2.00, Power (W) ta = 2, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 120, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
2N5660JAN |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
2N5660JANTX |
|
Microsemi
|
NPN POWER SILICON TRANSISTOR |
|
Original |
PDF
|
2N5660JANTX |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
2N5660JANTXV |
|
Microsemi
|
NPN POWER SILICON TRANSISTOR |
|
Original |
PDF
|
2N5660JANTXV |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
2N5660JTXV |
|
New England Semiconductor
|
NPN SILICON POWER TRANSISTOR |
|
Original |
PDF
|
2N5660JV |
|
Semico
|
Package = TO-66, Level = Jantxv, Vceo (V) = 200, Vcbo (V) = 250, Vebo (V) = 6.0, Ic (A) = 2.00, Power (W) ta = 2, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 120, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
2N5660JX |
|
Semico
|
Package = TO-66, Level = Jantxv, Vceo (V) = 200, Vcbo (V) = 250, Vebo (V) = 6.0, Ic (A) = 2.00, Power (W) ta = 2, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 120, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|