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Microchip Technology Inc 2N5336 NPN TRANSISTOR
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DigiKey	2N5336	Bulk			100	1 - 10 - 100 $31.1802 1000 $31.1802 10000 $31.1802	Buy Now
Avnet Americas	2N5336	Bulk		22 Weeks	100	1 $32.8888 10 $32.8888 100 $29.02575 1000 $30.33139 10000 $30.33139	Buy Now
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Newark	2N5336	Bulk			100	1 - 10 - 100 $31.18 1000 $29.96 10000 $29.96	Buy Now
Microchip Technology Inc	2N5336			22 Weeks		1 $33.56 10 $33.56 100 $33.56 1000 $33.56 10000 $33.56	Buy Now

Onlinecomponents.com	2N5336					1 - 10 - 100 $29.77 1000 $29.77 10000 $29.77	Buy Now
NAC	2N5336				10	1 $34.26 10 $34.26 100 $31.55 1000 $29.24 10000 $29.24	Buy Now
Master Electronics	2N5336					1 - 10 - 100 $29.77 1000 $29.77 10000 $29.77	Buy Now
Central Semiconductor Corp 2N5336 Bipolar Power Transistor NPN Amplifier/Switch 5V 80V 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N5336)
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Avnet Americas	2N5336	Box			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N5336 PBFREE Transistor GP BJT NPN 80V 5A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N5336 PBFREE)
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Avnet Americas	2N5336 PBFREE	Box			500	1 - 10 - 100 - 1000 $5.0686 10000 $5.0686	Buy Now
Mouser Electronics	2N5336 PBFREE					1 - 10 - 100 - 1000 $5.62 10000 $5.62	Get Quote
Central Semiconductor Corp 2N5336 TIN/LEAD Transistor GP BJT NPN 80V 5A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N5336 TIN/LEAD)
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Avnet Americas	2N5336 TIN/LEAD	Box			500	1 - 10 - 100 - 1000 $5.53749 10000 $5.53749	Buy Now
Mouser Electronics	2N5336 TIN/LEAD					1 - 10 - 100 - 1000 $6.33 10000 $6.33	Get Quote
Motorola Semiconductor Products 2N5336 SMALL SIGNAL BIPOLAR TRANSISTOR, 5A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-39
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Quest Components	2N5336		20			1 $11.85 10 $7.9 100 $7.9 1000 $7.9 10000 $7.9	Buy Now
	2N5336		2			1 $18.45 10 $17.22 100 $17.22 1000 $17.22 10000 $17.22	Buy Now

2N5336 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5336	Central Semiconductor	Small Signal Transistors	Original	PDF
2N5336	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=6	Original	PDF
2N5336	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5336	API Electronics	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39	Scan	PDF
2N5336	API Electronics	Short form transistor data	Short Form	PDF
2N5336	API Electronics	Short form transistor data	Short Form	PDF
2N5336	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
2N5336	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF
2N5336	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5336	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5336	General Semiconductor	Low Frequency Transistors	Scan	PDF
2N5336	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5336	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5336	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N5336	Unknown	Silicon NPN Transistor	Scan	PDF
2N5336	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5336	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5336	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N5336	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5336	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

2N5336 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5336X Abstract: No abstract text available Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)	Original	PDF	2N5336X O205AD) 1-Aug-02 2N5336X
Untitled Abstract: No abstract text available Text: 2N5336 2N5337 2N5338 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high	Original	PDF	2N5336 2N5337 2N5338 2N5339 2N5336
Untitled Abstract: No abstract text available Text: 2N5336 6 Watt NPN silicon power. 13.36 Transistors Bipolar Silicon N. 1 of 1 Home Part Number: 2N5336 Online Store 2N5336 Diodes 6 Wat t NPN s ilic o n po w er. Transistors Enter code INTER3 at checkout.*	Original	PDF	2N5336 com/2n5336 2N5336
Untitled Abstract: No abstract text available Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)	Original	PDF	2N5336X O205AD) 19-Jun-02
Untitled Abstract: No abstract text available Text: 2N5336 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	PDF	2N5336 O205AD) 17-Jul-02
Untitled Abstract: No abstract text available Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)	Original	PDF	2N5336X O205AD) 17-Jul-02
2N3507 JANTX Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523 Text: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C	Original	PDF	2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N3507 JANTX 2N5541 2N6235 jedec Package TO-39 2n554 2n523
2N5336 Abstract: No abstract text available Text: 2N5336 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	PDF	2N5336 O205AD) 1-Aug-02 2N5336
Untitled Abstract: No abstract text available Text: 2N5336 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	PDF	2N5336 O205AD) 19-Jun-02
2N5189 Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109 Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) TYP TYP TYP TYP TYP MAX ICEO ICES *ICEV	Original	PDF	2N4930 2N4931 2N4943 2N5681 2N5682 2N5781 2N5782 2N5783 2N5189 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	PDF	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
2N5336 Abstract: 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11 Text: PROCESS CP219 Central Power Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS	Original	PDF	CP219 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 2N5336 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11
2N5339 Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53 Text: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —	OCR Scan	PDF	2N5336 2N5337 2N5338 2N5339* 2N6190 2N6193 2N533Â 2N5339 2N533 2n5337 jantx 2n5339 jantx 2N6336 2n53
Untitled Abstract: No abstract text available Text: 7^ 2 ^ 5 3 ? 002=1335 7 • £ jl 1 ^ 3 2 -O S 2N5336/5337 2N5338/5339 SCS-THOMSON i&JCTHMOtgS S G S-TH0MS0N 3ÜE » HIGH CURRENT FAST SWITCHING APPLICATION DESCRIPTION The 2N5336, 2N5337, 2N5338 and 2N5339 are silicon epitaxial planar NPN transistors in Jedec	OCR Scan	PDF	2N5336/5337 2N5338/5339 2N5336, 2N5337, 2N5338 2N5339 2N5336/37/38/3 25/uF 10/LIS

Untitled Abstract: No abstract text available Text: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152	OCR Scan	PDF	2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337
LT 5337 Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338 Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 \| 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.	OCR Scan	PDF	2N5336 2N5339 2N6190 2N6193 LT 5337 2N5339 2N6193, Motorola LN 7904 2n5337 2n5338 NS338
2n5339 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 13E D \| L3L7254 0084542 1 \| 2N5336 thru 2N5339 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MEDIUM-POWER NPN SILICON TRANSISTORS 5 AM PERE POWER TRANSISTORS NPN SILICON . . . designed for switching and wide band amplifiar applications. • Low Collector-Emitter Saturation Voltage —	OCR Scan	PDF	L3L7254 O-205AD 2N6190 2N6193 2N5336 2N5337 2N5336 2N5339 2n5339
2N5339 Abstract: 2N5337 2N5336 2N5338 1B05A Text: 2N5336 2N5337 2N5338 2N5339 ♦I : * ' «trai sem iconductor CorpCentral Sem iconductor Corp. NPN SILICON TRANSISTOR 1 4 5 Adam s Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-39 CASE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824	OCR Scan	PDF	2N5336 2N5337 2N5338 2N5339 2N5338 2N5339 500mA 1B05A
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	PDF	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786
BU606D Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650 Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 \| Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440	OCR Scan	PDF	BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5	OCR Scan	PDF	O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420
2N5415 Abstract: No abstract text available Text: C R I M S O N S E M I C O N D U C T O R INC D e \| SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421	OCR Scan	PDF	00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415
2N4116 Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309 Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~\| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850	OCR Scan	PDF	fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658
2N5189 Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109 Text: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION @ l c VCE VCE(SA T ) ® ' C (m A) (m A) (V) (V) h :E VCBO v CEO v EBO •CBO ® VCBO (V) (V) (V) (V) (M ) NF Cob <PF) •on (ns) off (ns) (dB) TYP *TYP TYP TYP TYP MAX MIN MIN MIN 200	OCR Scan	PDF	2N4930 2N4931 2N4943 2N4960 2N5022 2N5679 2N5680 2n5681 2N5682 2N5781 2N5189 2N5023 2N5058 2N5059 2N5109

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2N5336 Datasheets (41)

2N5336 Datasheets Context Search

2N5336X

Untitled

Untitled

Untitled

Untitled

Untitled

2N3507 JANTX

2N5336

Untitled

2N5189

BUV48I

2N5336

2N5339

Untitled

Untitled

LT 5337

2n5339

2N5339

2N1479

BU606D

Untitled

2N5415

2N4116

2N5189