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    2N5160 Price and Stock

    Central Semiconductor Corp CP616-2N5160-CM

    RF TRANSISTOR TO-39
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    Central Semiconductor Corp CP616-2N5160-CT

    RF TRANSISTOR TO-39
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    Central Semiconductor Corp CP616-2N5160-WN

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    Solid State Devices Inc (SSDI) 2N5160

    To 3 Silicon Transistor Pnp Rohs Compliant: Yes |Solid State 2N5160
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    New Jersey Semiconductor Products, Inc. 2N5160

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    Bristol Electronics 2N5160 6,568 1
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    2N5160 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5160 Motorola European Master Selection Guide 1986 Scan PDF
    2N5160 Motorola PNP Silicon Power Transistor Scan PDF
    2N5160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5160 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5160 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5160 Unknown Vintage Transistor Datasheets Scan PDF
    2N5160 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5160 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5160 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5160 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5160

    Abstract: No abstract text available
    Text: 2N5160 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5160 Availability Online Store


    Original     		PDF 2N5160 2N5160 STV3208 LM3909N

    2N5160

    Abstract: No abstract text available
    Text: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,


    Original     		PDF 2N5160 2N3866 400-MHz -30nH. -10pF 2N5160

    2N3866 application note

    Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs, 2N3866 application note transistor 2n2369 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866

    rosemount 118mf

    Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) rosemount 118mf OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A

    1N148 diode

    Abstract: 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"
    Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTION FEATURES • ■ ■ ■ Guaranteed Offset Voltage –55°C to 125°C Guaranteed Drift Guaranteed Bias Current 70°C 125°C Guaranteed Slew Rate 150µV Max 500µV Max 4µV/°C Max


    Original     		PDF LT1055/LT1056 LT1055/LT1056 150pA 500pA amplifi81) 254mm) 1N148 diode 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"

    Datasheet of 7490 IC decade counter

    Abstract: VDR-307 SCO-106 ic 7490 pin diagram ic 7490 Decade Counter data sheet 7490 Decade Counter internal diagram of 7490 IC IC sine wave generator for 1Hz-to-100MHz Julie Research Labs SP656
    Text: Application Note 9 August 1986 Application Considerations and Circuits for a New Chopper-Stabilized Op Amp Jim Williams A great deal of progress has been made in op amp DC characteristics. Carefully executed designs currently available provide sub-microvolt VOS ΔT drift, low bias currents


    Original     		PDF SP656) AN9-20 Datasheet of 7490 IC decade counter VDR-307 SCO-106 ic 7490 pin diagram ic 7490 Decade Counter data sheet 7490 Decade Counter internal diagram of 7490 IC IC sine wave generator for 1Hz-to-100MHz Julie Research Labs SP656

    74H123

    Abstract: 74hc123 Spice LT1597 darlington array with clamp diode 2A AN7418 tektronix 454 service manual 2N3440 HARRIS SEMICONDUCTOR 74hc163 spice 74hc123 AN7421
    Text: Application Note 74 July 1998 Component and Measurement Advances Ensure 16-Bit DAC Settling Time The art of timely accuracy Jim Williams Introduction Instrumentation, waveform generation, data acquisition, feedback control systems and other application areas are


    Original     		PDF 16-Bit AN74-47 AN74-48 an74f 74H123 74hc123 Spice LT1597 darlington array with clamp diode 2A AN7418 tektronix 454 service manual 2N3440 HARRIS SEMICONDUCTOR 74hc163 spice 74hc123 AN7421

    Lt1016

    Abstract: sn1016 lt1016 equivalent LT1220
    Text: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 T1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs Lt1016 lt1016 equivalent LT1220

    SCO-106

    Abstract: of CMOS IC 74c90 RCA 2N3866 Julie Research Labs LT318A AD650 MTR-51 ICL7652 LM11 LTC1052
    Text: ~"""""Llnet\R .L, Application Note 9 TECHNOLOGY~- Application Considerations and Circuits for a New Chopper-Stabilized Op Amp Jim Williams A great deal of progress has been made in op amp DC characteristics. Care'lully executed designs currently available provide sub-microvolt Vas ~ T drift, low bias


    Original     		PDF SP656) AN9-20 SCO-106 of CMOS IC 74c90 RCA 2N3866 Julie Research Labs LT318A AD650 MTR-51 ICL7652 LM11 LTC1052

    ta143

    Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF gLTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta143 Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic

    LT1220

    Abstract: No abstract text available
    Text: LT1016 UltraFast Precision 10ns Comparator Features n n n n n n n Description UltraFast 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016, LT1016 100MHz LT1715 150MHz LT1719/LT1720/LT1721 LT1220

    2N5160

    Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
    Text: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­


    OCR Scan     		PDF b3b7254 2N5160 2N3866 MIL-S-19500 MRF5160HX, MRF51 2N5160 300-MHz 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516

    transistor rc 3866

    Abstract: rc 3866 transistor 3866 s t 3866 power transistor Transistor 2N5160 transistor t 3866 2N5160 t 3866 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line 1C = - 4 0 0 mA POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR PNP SILICON . . . designed fo r am plifier, freq u e n cy m ultiplier or o scillato r applica­ tion s in m ilitary and industrial equipm ent. Su itab le fo r use as C lass A,


    OCR Scan     		PDF 2N5160 transistor rc 3866 rc 3866 transistor 3866 s t 3866 power transistor Transistor 2N5160 transistor t 3866 2N5160 t 3866 transistor

    2N5160

    Abstract: No abstract text available
    Text: M O T O R O L A SC -CXSTRS/R F> 6 3 6 725 4 MOTOROLA SC ST DT|h3b72SM 0D7TMST 0 89D 79459 <XSTRS/R F 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5160 Die Source Same as 2N5160 RF TRANSISTOR PNP SILICON M A XIM U M RATINGS Symbol Value Collector-Emitter Voltage


    OCR Scan     		PDF f367254 2N5160

    Tektronix 2245a

    Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
    Text: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note


    OCR Scan     		PDF AN47-131 AN47-132 Tektronix 2245a 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley

    4013 flipflop

    Abstract: oscilloscope service manual teledyne transistor cross reference lt317 ad639 CA3096 "cross reference" 6012 DAC CA3096 ltc1043 2N2369
    Text: rru m i Application Note 14 TECHNOLOGY March 1986 Designs for High Performance Voltage-to-Frequency Converters Jim W illiam s Monolithic, modular and hybrid technologies have been The positive input voltage causes A1, the servo amplifier, used to implement voltage-to-frequency converters. A


    OCR Scan     		PDF 12-bit AN-13, 4013 flipflop oscilloscope service manual teledyne transistor cross reference lt317 ad639 CA3096 "cross reference" 6012 DAC CA3096 ltc1043 2N2369

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943

    2N3866 MOTOROLA

    Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 2N5829 2N5031 MRF904 MRF571 RF572/M RF2369 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957

    2N3553 motorola

    Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.


    OCR Scan     		PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 2N3553 motorola MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239