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    2N5095 Search Results

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    2N5095 Price and Stock

    Microchip Technology Inc 2N5095

    TRANS NPN 500V 1A TO5
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    DigiKey 2N5095 Bulk
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    GTCAP 2N5095

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5095 88
    • 1 $40.3892
    • 10 $40.3892
    • 100 $32.3114
    • 1000 $32.3114
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    General Transistor Corp 2N5095

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5095 19
    • 1 $33.6576
    • 10 $31.9747
    • 100 $30.2918
    • 1000 $30.2918
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    2N5095 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5095 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=400 / Ic=1 / Hfe=15-250 / fT(Hz)=50M / Pwr(W)=2 Original PDF
    2N5095 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N5095 Diode Transistor Transistor Short Form Data Scan PDF
    2N5095 General Transistor Power Transistor Selection Guide Scan PDF
    2N5095 High Voltage Semi-Conductor Specialists Military and Industrial Medium Power Transistors Scan PDF
    2N5095 High Voltage Semi-Conductor Specialists Silicon PNP - Power Transistors Scan PDF
    2N5095 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5095 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5095 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5095 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5095 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5095 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5095 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5095 New England Semiconductor Transistor Selection Guide Scan PDF
    2N5095 New England Semiconductor NPN TO-39 / TO-5 Transistor Scan PDF
    2N5095 PPC Products Transistor Short Form Data Scan PDF
    2N5095 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5095 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5095 Solid State 500 V, 1 A high voltage NPN transistor - Pol=NPN / Pkg=TO39 / Vceo=400 / Ic=1 / Hfe=15-250 / fT(Hz)=50M / Pwr(W)=2 Scan PDF
    2N5095 Solid State Devices BJT, NPN, High Voltage Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=400 / Ic=1 / Hfe=15-250 / fT(Hz)=50M / Pwr(W)=2 Scan PDF

    2N5095 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5095

    Abstract: No abstract text available
    Text: 2N5095 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5095 O205AD) 1-Aug-02 2N5095

    Untitled

    Abstract: No abstract text available
    Text: 2N5095 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5095 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5095 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5095 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: 2N5095 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5095 O205AD) 17-Jul-02

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N2992

    Abstract: 23028 2N3016 JANTX2N3440
    Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S


    OCR Scan     		PDF

    2N5097

    Abstract: 2N5092 2N5094 2N5095 2N5096 10cf
    Text: X o i& U M UDII 2N5095 AND 2N5097 1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5 I. P 330 .320 14830 Valley View Avenue La Mirada, California 90638 P. O. Box 577 La Mirada, California 90637 213 921-9660 TWX 910-583-4807 FEATURES


    OCR Scan     		PDF 2N5095 2N5097 2N5094 2N5096 2N5092 2N5096 10cf

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 1EE D | ô 3 b b D l l 000BD55 7 | T - 3 3 -05" 2N5095 AND 2N5097 1 AMP 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5


    OCR Scan     		PDF 000BD55 2N5095 2N5097

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    Untitled

    Abstract: No abstract text available
    Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C


    OCR Scan     		PDF 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    Untitled

    Abstract: No abstract text available
    Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN


    OCR Scan     		PDF 2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


    OCR Scan     		PDF 34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990

    2n2222A

    Abstract: pin configuration transistor 2N2222A transistor 2n2222a pnp transistor bipolar 2n2222a NPN transistor 2n2222A
    Text: SÓLI» STATE DEVICES INC 3SE D • Ô3bbüll 00053Ü4 2 * S S I Dual & Quad Bipolar Transistors 25°C Elcctrical Characteristics Per Transistor Configuration ; PolaritylfV - IC: ••A'«' NPN/PNP 0.8/0.6 50/60 Dual Uncommitted Quad NPN Uncommitted 0.8 50


    OCR Scan     		PDF 2N2222A/2N2907A) SLC6259-16Q 2N2222A) SFT700D-16Q 2N2222A/2N2907A SFT9596-20D 2N5095/2N5096) SFT3507-20D SFT4353-20D SFT4300/SFT5333) 2n2222A pin configuration transistor 2N2222A transistor 2n2222a pnp transistor bipolar 2n2222a NPN transistor 2n2222A

    2N3904DCSM

    Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
    Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A


    OCR Scan     		PDF GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930

    2N4927

    Abstract: 2N5415
    Text: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib


    OCR Scan     		PDF 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 2N1483 2N1484 2N1495 2N1486 2N4927 2N5415

    2N5098

    Abstract: TRS-1604 TRS1604 2N3742 a 4504 2N5013 20MC 2N3439 2N4926 2N4927
    Text: Û0 D E JM47107fl DOOODOE □ f 8 0 A 00002 D 7~— X l - û j HIGH VOLTAGE 4471078 HIGH VOLTAGE BVCER RBE10Ü @200 lia VOLTS 350 2N3439 2N4926 / 2K4927 200 200 ’ 250 500« 2N5011 @100 ua VOLTS 300 250 2N5010 @200 ua VOLTS 300 300 2N3742 BVEBO •450 ' 250


    OCR Scan     		PDF M47107fl 2N3439 2M3440 2N3742 2N4926 2N4927 2N5010 2N5011 2N5012 2N5013 2N5098 TRS-1604 TRS1604 a 4504 20MC

    m30040

    Abstract: No abstract text available
    Text: GENERAL T RA NS IST O R CORP S4E D • 3=120001 OOOQOb? 3 General Transistor Corporation 216 W E ST FLO R EN C E A V EN U E IN GLEW O O D , C A LIFO RN IA 90301 213 673-8422 • Telex 65-3474 • FA X (213) 672-2905 PNP Power Transistors CASE TO-5/TO-39


    OCR Scan     		PDF O-5/TO-39 0-450V 2N3742 001efcV) m30040

    Untitled

    Abstract: No abstract text available
    Text: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013


    OCR Scan     		PDF 2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600

    2N5094

    Abstract: 2N5091 2N5096 2N5093 C178T Transistor 2N5093 2N5095 2N5097
    Text: ÿ o & m l 2N5094 AND 2N5096 £ £ I D I I s)s>U»'ll 1 AMP HIGH VOLTAGE PNP TRANSISTOR 450-500 VOLTS 14830 Valley View Avenue La Mirada. Calitornia 90638 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • BVCBO TO 500 V O LTS • LOW SATURATION VOLTAGE


    OCR Scan     		PDF 2N5094 2N5096 2N5095 2N5097 2N5091 2N5093 C178T Transistor 2N5093 2N5097

    transistor 3504 npn

    Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
    Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803


    OCR Scan     		PDF Efl463S2 TMI\I515TQR rc-25Â 2N3867 2N3868 2N5147 2N5149 2N5151 2N5153 2N5148 transistor 3504 npn 2N3742 2N5150 2N5152

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF