2n4037
Abstract: 2N4036 2n4036 equivalent
Text: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO – 65
|
Original
|
2N4036/D
2N4036
2N4037
205AD)
2n4037
2N4036
2n4036 equivalent
|
PDF
|
2n4036
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO – 65
|
Original
|
2N4036/D
2N4036
2N4037
205AD)
2n4036
|
PDF
|
2N4036
Abstract: 2n4037 MOTOROLA TO205AD 2n4037 motorola
Text: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4036 2N4037 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO – 65 – 40 Vdc Collector – Base Voltage
|
Original
|
2N4036/D
2N4036
2N4037
205AD)
2N4036
2n4037
MOTOROLA TO205AD
2n4037 motorola
|
PDF
|
8CP69
Abstract: 8C304 2s81132 TO226AA 202-AA sk3262 2S8528 2S8549 SIEMENS 5SN 2SA885
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
|
Original
|
O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
8CP69
8C304
2s81132
TO226AA
202-AA
sk3262
SIEMENS 5SN
2SA885
|
PDF
|
2N3053 equivalent
Abstract: list of n channel power mosfet barcode reader circuit 5490 motorola MICROSEMI 2N2222A transistor motorola 2n3053 2n5179 equivalent rfid passive tag architecture and standards equivalent 2N2907A 2N2102* motorola
Text: Winter 2000 NOW Products Protecting Transient Protection Product Guide Microsemi has developed a program to communicate its more popular transient suppression products to our customers on a more frequent basis. Starting in late 1999 Microsemi started shipping a quarterly Transient
|
Original
|
LX5241/42/43
2N3053 equivalent
list of n channel power mosfet
barcode reader circuit
5490 motorola
MICROSEMI 2N2222A
transistor motorola 2n3053
2n5179 equivalent
rfid passive tag architecture and standards
equivalent 2N2907A
2N2102* motorola
|
PDF
|
2N4858 TEXAS
Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
|
Original
|
O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
2N4858 TEXAS
2N4872
SIEMENS 5SN
2N4433
Qualidyne
2N4418
transtek
40391 RCA
2N4417
api 560
|
PDF
|
SIEMENS 5SN
Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
|
Original
|
O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
SIEMENS 5SN
2N3406
UNITRODE DIODE 240
39 sot-89
2n3400
2N3483
2N3436 motorola
|
PDF
|
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
|
Original
|
2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
|
PDF
|
LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
|
Original
|
ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
LM1011N
JRC386D
X0238CE
UA78GKC
M51725L
MJ13005
AN6677
HA11749
MN8303
sn76131n
|
PDF
|
jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
|
Original
|
ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
|
PDF
|
2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
|
PDF
|
2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
|
PDF
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
|
Original
|
MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
|
PDF
|
BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
|
Original
|
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
|
PDF
|
|
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
|
Original
|
MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
|
PDF
|
2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
|
PDF
|
BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
|
PDF
|
BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
|
PDF
|
2n4036
Abstract: MOTOROLA TO205AD 2N4037
Text: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N4036 2N4037 COLLECTOR 3 BASE MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector-Emitter Voltage Rating VCEO -6 5 -4 0 Vdc Collector-Base Voltage
|
OCR Scan
|
2N4036/D
2N4036
2N4037
2N4037
205AD)
B0217.
MOTOROLA TO205AD
|
PDF
|
2n4036
Abstract: 2N4037 2N4037 MOTOROLA
Text: MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector-Emitter Voltage V cEO -6 5 -40 Vdc Collector-Base Voltage VCBO -90 - 60 Vdc Emitter-Base Voltage v EBO - 7.0 -7 .0 Rating Base Current Vdc • b - 0 .5 Ade Collector Current — Continuous <C - 1 .0 Ade Continuous Power Dissipation
|
OCR Scan
|
2N4036
2N4037
2N4037
O-205AD)
2N4037)
2N4036)
2N4037 MOTOROLA
|
PDF
|
2N40
Abstract: No abstract text available
Text: M AXIM UM RATINGS Symbol 2N4036 2N4037 Unit C o lle c to r - E m itte r V o lta g e Rating v CEO -6 5 -4 0 Vdc C o lle c t o r - B a s e V o lta g e v CBO E m it t e r - B a s e V o lta g e vebo B a s e C u rre n t -9 0 -6 0 Vdc - 7 .0 - 7 .0 Vdc Iß - 0 .5
|
OCR Scan
|
2N4036
2N4037
2N4036
2N40
|
PDF
|
motorola 2N2270
Abstract: 2N5861 MOTOROLA
Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:
|
OCR Scan
|
2N656
2N657
2N697
2N706
2N708
2N718
2N718A
2N869A
2N914
2N916
motorola 2N2270
2N5861 MOTOROLA
|
PDF
|
motorola 2N2270
Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.
|
OCR Scan
|
h3b7E54
007b70E
2N2896
2N3700#
2N2895
2N956
2N2897
2N718
2N2221A#
2N2222AI
motorola 2N2270
2N3947
2N956 MOTOROLA
JAN 2N2896
transistor motorola 2n3053
motorola 2N2270 to-18
mm3904
motorola 2N2219
2N4028
MM6427
|
PDF
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
|
PDF
|
