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    2N3819 JUNCTION FET Search Results

    2N3819 JUNCTION FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    DG182AP/B Rochester Electronics DG182 - Dual SPST, High-Speed Drivers with JFET Switch Visit Rochester Electronics Buy
    2SK160A-T1B-A Renesas Electronics Corporation Junction Field Effect Tansistors, MM, /Embossed Tape Visit Renesas Electronics Corporation
    ISL28210FBZ-T13 Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ-T7A Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation

    2N3819 JUNCTION FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF Amplifiers

    Abstract: 2n5952 equivalent 2N3819 equivalent transistor 2N5952 datasheet 2n5484 jfet 2N5951 2n4416 2n4416 jfet 2N5952 2n5484 equivalent
    Text: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ (µmho) f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC


    Original     		PDF 2N5952 2N5953 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 RF Amplifiers 2n5952 equivalent 2N3819 equivalent transistor 2N5952 datasheet 2n5484 jfet 2N5951 2n4416 2n4416 jfet 2N5952 2n5484 equivalent

    2N5950

    Abstract: 2N5952
    Text: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ µmho) (µ f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC


    Original     		PDF 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 2N5951 2N5952

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    date code IEC 62

    Abstract: bc107a pin out BC237 bf256c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage


    Original     		PDF VN0610LL 226AA) secon218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 date code IEC 62 bc107a pin out BC237 bf256c

    code marking 6z sot-23

    Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous


    Original     		PDF MMBF170LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 code marking 6z sot-23 BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72

    BC237

    Abstract: 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN  Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


    Original     		PDF BSS123LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2N3819 junction fet

    BC237

    Abstract: Fet BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V


    Original     		PDF VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245

    BC237

    Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819

    BC237

    Abstract: MSA1022 msc2295 BF391 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for


    Original     		PDF M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 MSA1022 msc2295 BF391 "direct replacement"

    BC237

    Abstract: transistor TO-92 bc108 VN10lM equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE  1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous


    Original     		PDF VN10LM 226AE) Vol218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 transistor TO-92 bc108 VN10lM equivalent

    BC237

    Abstract: BC857A MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


    Original     		PDF BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC857A MARKING CODE diode sod123 W1

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF 2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237

    2N3819 junction fet

    Abstract: 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage


    Original     		PDF MPF6659 MPF6660 MPF6661 MPF6661 226AE) MSC1621T1 MSC2404 MSD1819A 2N3819 junction fet 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


    Original     		PDF 2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet

    2N5485

    Abstract: 2N5951 2N4416 2N5950 2N5952 Variable resistor 50K ohm 2N3819 2N4416A 2N5484 2N5486
    Text: Junction FETs RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re IYfsl Re IYosj @ C|SS NF rs* @ V BR GSS TO-92 v GS(off) loss PIN OUT @ (mmho) f Qimho) f <PF) <PF) <dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) (V) TO-92 2N3819


    OCR Scan     		PDF 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5951 2N5950 2N5952 Variable resistor 50K ohm

    2N3819

    Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
    Text: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92


    OCR Scan     		PDF 711002b G02b333 2N3819 MBB081 G02b334 T-35-25 711i0fiBb 005b33b 2N3819 transistor 2N3819 2n3819 transistor J-FET 2N3819

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1


    OCR Scan     		PDF 2N3819 bb53T31

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


    OCR Scan     		PDF 2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819

    transistor 2N3819

    Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N


    OCR Scan     		PDF 2N3819 UBB081 D035fl44 J-FET-2N3819 transistor 2N3819 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet

    2N5952

    Abstract: No abstract text available
    Text: Junction fets* RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re lYfel R IYqsI & c iss NF c rss @ TO-92 V BR GSS vGS(off) (V) •d s s PIN OUT @ (mmho) f Ounho) f (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0 4.0


    OCR Scan     		PDF 2N3819 2TO-92 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 2N5952

    2N5949

    Abstract: 2N5951 2N5953 2N5952 2n3819
    Text: Junction FETs RF Amplifiers TO-72 N-Channel C A SE TYPE NO. Re lYfgl Re IY0S| c is s NF ^rss @ V BR G SS TO-92 v GS(off) •d s s PIN OUT @ (mmho) f Oimho) i (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) 00 TO-92


    OCR Scan     		PDF 2N3819 2N4416 2N4416A 2N5484 2N5485 2N5486 2N5949 2N5950 2N5951 2N5952 2N5953

    PN4360

    Abstract: pn3687
    Text: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0


    OCR Scan     		PDF 2N2608 2N2609 2N3820 2N5020 2N5460 2N5461 2N5462 PN4360 PN4360 pn3687

    2N3819 NATIONAL SEMICONDUCTOR

    Abstract: National 2N3819 2n3819 surface mount 2n5951 2N5245 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305
    Text: bflE D • bSDllBO □ D 3 cm ci,:i SS7 INSCS NATL SEMICOND DISCRETE TO -52 N Channel DG VP@VDSID m BVqsj Device (V) Min (V) Min Max 2N3819 25 2N4416 30 2.5 im 8 15 2 6 15 RelYfsl NF Re(Yos) Clss Crss (dB)@Rg = 1k (mmho) @ f (limho) @ f Package (PF) (PF)


    OCR Scan     		PDF 2N3819 2N4416 PN4416 MMBF4416 2N5245 2N5246 2N5247 2N5397 2N5484 MMBF5484 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2n5951 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305

    2N3819 NATIONAL SEMICONDUCTOR

    Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
    Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k


    OCR Scan     		PDF bSD113D D3I14ci, 2N3819 T0-92 2N4416 PN4416 MMBF4416 O-236* 2N5245 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 2N5246