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    2N3638 TRANSISTOR Search Results

    2N3638 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N3638 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    Untitled

    Abstract: No abstract text available
    Text: Unipolar Digital Hall-Effect Sensor ICs SS340RT/SS440R Series Datasheet Unipolar Digital Hall-Effect Sensor ICs The SS340RT/SS440R sensor ICs are small, versatile digital Hall-effect devices that are operated by the magnetic field from a permanent magnet or an electromagnet. They are designed to respond to a single pole: North SS340RT or South


    Original     		PDF SS340RT/SS440R SS340RT) SS440R) SS341RT SS441R SS343RT SS443R SS349RT SS449R

    2N3638

    Abstract: 2N3638 datasheet AMS9491 AMS9491A AMS9491AN AMS9491AS AMS9491B AMS9491BN AMS9491BS LM334
    Text: Advanced Monolithic Systems AMS9491 1.235V VOLTAGE REFERENCE FEATURES APPLICATIONS • ±10 mV max. initial tolerance A grade • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Ω Dynamic Impedance (A grade) • Low Temperature Coefficient


    Original     		PDF AMS9491 AMS9491 152mm) 254mm) 6680B 2N3638 2N3638 datasheet AMS9491A AMS9491AN AMS9491AS AMS9491B AMS9491BN AMS9491BS LM334

    2N3638

    Abstract: 2N2907 LM334 LM4250C
    Text: Advanced Monolithic Systems AMS1004-1.2 MICROPOWER VOLTAGE REFERENCE RoHS compliant FEATURES APPLICATIONS • ±4 mV ±0.3% max. initial tolerance (A grade) • Operating Current 10µA to 20mA • Low Voltage Reference 1.235V • Max. 0.6Ω Dynamic Impedance (A grade)


    Original     		PDF AMS1004-1 AMS1004-2 254mm) OT-89 OT-89 2N3638 2N2907 LM334 LM4250C

    opto-coupler darlington pnp

    Abstract: 2n3568 mje3055 data transistor MJE3055 2N3638 transistor transistor current booster circuit Motorola transistors MJE3055 optocoupler pnp or npn pnp phototransistor motorola optocoupler
    Text: VISHAY Vishay Semiconductors Driving High-Level Loads With Optocouplers Appnote 4 Frequently a load to be driven by an optocoupler requires more current, voltage, or both, than an optocoupler can provide at its output. Available optocoupler output current is found by multiplying input (LED section) current by the "CTR" or


    Original     		PDF 24-Nov-03 opto-coupler darlington pnp 2n3568 mje3055 data transistor MJE3055 2N3638 transistor transistor current booster circuit Motorola transistors MJE3055 optocoupler pnp or npn pnp phototransistor motorola optocoupler

    LM185-1.2

    Abstract: 2N3638 equivalent RETS185H 2n2907 SOT23 J 2N2907 LM385Z sot23 LM185 LM385-1 pin diagram of LM385 *5518
    Text: LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10µA to 20mA current range, they feature exceptionally low dynamic impedance and good temperature stability.


    Original     		PDF LM185-1 2/LM285-1 2/LM385-1 CSP-9-111S2) CSP-9-111S2. LM185-1.2 2N3638 equivalent RETS185H 2n2907 SOT23 J 2N2907 LM385Z sot23 LM185 LM385-1 pin diagram of LM385 *5518

    Untitled

    Abstract: No abstract text available
    Text: Advanced Monolithic Systems AMS9491 1.235V VOLTAGE REFERENCE RoHS compliant FEATURES APPLICATIONS • ±10 mV max. initial tolerance A grade • Operating Current 10µA to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Dynamic Impedance (A grade) • Low Temperature Coefficient


    Original     		PDF AMS9491 AMS9491 152mm) 254mm)

    opto-coupler darlington pnp

    Abstract: 2N3568 OPTOCOUPLER HAND BOOK Motorola transistors MJE3055 pnp phototransistor transistor current booster circuit mje3055 data transistor MJE3055 optocoupler pnp or npn optocoupler base resistor
    Text: Driving High-Level Loads With Optocouplers Appnote 4 Frequently a load to be driven by an optocoupler requires more current, voltage, or both, than an optocoupler can provide at its output. sistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is about 1.2 volts. Figures 1 and Figure 2 show two such drive circuits.


    Original     		PDF

    LM185-1.2

    Abstract: 2N3638 2n2907 SOT23 LM185 LM385-1 LM385BZ-1.2 NATIONAL SEMICONDUCTOR
    Text: LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10 µA to 20 mA current range, they feature exceptionally low dynamic impedance and good temperature stability.


    Original     		PDF LM185-1 2/LM285-1 2/LM385-1 LM185-1.2 2N3638 2n2907 SOT23 LM185 LM385-1 LM385BZ-1.2 NATIONAL SEMICONDUCTOR

    2N3638

    Abstract: 2N3638 equivalent "2n3638" 2N2907 AMS9491 AMS9491A AMS9491AN AMS9491AS AMS9491B AMS9491BN
    Text: Advanced Monolithic Systems AMS9491 1.235V VOLTAGE REFERENCE FEATURES APPLICATIONS • ±10 mV max. initial tolerance A grade • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Ω Dynamic Impedance (A grade) • Low Temperature Coefficient


    Original     		PDF AMS9491 AMS9491 152mm) 254mm) 2N3638 2N3638 equivalent "2n3638" 2N2907 AMS9491A AMS9491AN AMS9491AS AMS9491B AMS9491BN

    Untitled

    Abstract: No abstract text available
    Text: Advanced Monolithic Systems AMS1004-1.2 MICROPOWER VOLTAGE REFERENCE RoHS compliant FEATURES APPLICATIONS • ±4 mV ±0.3% max. initial tolerance (A grade) • Operating Current 10µA to 20mA • Low Voltage Reference 1.235V • Max. 0.6Ω Dynamic Impedance (A grade)


    Original     		PDF AMS1004-1 AMS1004-2 254mm) OT-89 OT-89

    2N3638

    Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW


    OCR Scan     		PDF 2N4969 2N3641 2N4436 EN697 MPSA10 MPSA20 2N3904 2N3903 EN3903 MPS6531 2N3638 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855

    2N3638

    Abstract: 2N3644 2N3645 2N3638A CIL297 2N4354 2N4355 2N4356 CIL295 CIL296
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP M a x m u m P a t in g s 2N4356 V CBO V CEO V EBO (V) Min (V) Min (V) BO SO Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 5.0 45 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat)


    OCR Scan     		PDF O-105 2N4356 2N3645 CIL296 CIL297 OL298 2N3638 2N3638A CIL591 C1L592 2N3644 2N4354 2N4355 CIL295

    2n3638

    Abstract: No abstract text available
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP Maxim um R atin gs 2N4356 2N364S V CBO VCEO V EBO (V) Min (V) Min (V) Min BO B0 5.0 60 2N4354 2N4355 2N3644 60 60 45 60 60 60 45 IcBO (MA) Max 0.05 V CB (V) Min 50 5.0 5.0 5.0 5.0 »FE Max 0.05 0.04 50 50 30 VCE(Sat)


    OCR Scan     		PDF O-105 2N4356 2N4354 2N4355 2N3644 OL298 2N3638 2N3638A CIL591 C1L592 2n3638

    2N3644

    Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max


    OCR Scan     		PDF O-105 2N4356 2N3645 CIL296 CIL297 OL298 2N3638 2N3638A CIL591 C1L592 2N3644 2N4354 2N4355 CIL295

    2N3566

    Abstract: 2N3638 2N3638A bc119 NPN BC738 PN6076 2n3638 fairchild high voltage npn to-92 BC728-6 MPS3393
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEVICE NO. Polarity NPN PNP hpE @ ic VCEO (V c e r ) (hfe) V mA Min/Max Min VCE(sat) v


    OCR Scan     		PDF MPS2924 2N4124 MPS3393 EN5172 O-106 MPS5172 2N5135 O-105 2NS225 2NS226 2N3566 2N3638 2N3638A bc119 NPN BC738 PN6076 2n3638 fairchild high voltage npn to-92 BC728-6 MPS3393

    2N5139

    Abstract: 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70
    Text: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) *V CER * VOLTS TYPE MIN V CE(sat) LU LL V CEO VOLTS @ *c mA MAX hlFE MIN - MAX @ @ 50 @ 2N5221


    OCR Scan     		PDF 2N5221 2N5139 2N5142 2N5143 MPS6563 MPS6519 2N4126 2N3638A MPS3638A MPS3702 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70

    2N3638A

    Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3638A 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3638

    2N3638

    Abstract: 2N3638A MPS-3638A MPS3638A NT 407 F MPS3638 2N3638/A "2n3638"
    Text: MPS3638 silicon MPS3638A NPN SILICON A N N U LA R TRANSISTORS . designed for high-current switching applications. NPN SILICON Collector-Emitter Sustaining Voltage — VCEQ(sus) = 25 Vdc (Min) SWITCHING TRANSISTORS DC Current Gain Specified — 1.0 mAdc to 300 mAdc


    OCR Scan     		PDF MPS3638 MPS3638A MPS3638A 2N3638 MPS3638 2N3638A MPS-3638A NT 407 F 2N3638/A "2n3638"

    2N3402

    Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3402 2n3404 2N3405 2N3403 2N3638 N3404

    2N2222 npn small signal current gain

    Abstract: 2N5828 GET706 2N6000 beta 2N2222 2N3013 2N6006 GET2904 2N6002 GET3014
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2222 npn small signal current gain 2N5828 2N6000 beta 2N2222 2N3013 2N6006 GET2904 2N6002 GET3014

    2n60c

    Abstract: 2N3638 2N3638A 2N6002 2N5816 2N6000 HS5810 2N6006 GET3013 GET3638
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25m A 25m A GET706 GET708 to GET914 G ET3013 G ET3646 : 2N6000 2N60Q2 30 2N6001 2N6S03 t] 800m A PNP NPN pn p GET3014 GET3S3B GET3638A G ET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2n60c 2N3638 2N3638A 2N6002 2N5816 2N6000 HS5810 2N6006 GET3638

    2N5828

    Abstract: 2N3854A 2N6000 2N3638 2N6006 2N6002 GET3013 GET3014 2N6004 GET3646
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N5828 2N3854A 2N6000 2N3638 2N6006 2N6002 GET3014 2N6004

    2N6016

    Abstract: 2N5816 2N3856 2N3638A 2N5822 2N6000 2N6002 GET3014 GET3638 GET706
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6016 2N5816 2N3856 2N3638A 2N5822 2N6000 2N6002 GET3014 GET3638