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    2N2222 NPN SMALL SIGNAL CURRENT GAIN Search Results

    2N2222 NPN SMALL SIGNAL CURRENT GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    2N2222 NPN SMALL SIGNAL CURRENT GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222

    Abstract: 2n2222a 2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 Datasheet 2N2222 transistor 2N2222 transistor
    Text: NPN 2N2222 2N2222A PNP 2N2907 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f./u.h.f.


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    PDF 2N2222 2N2222A 2N2907 2N2907A 2N2222 2N2222A 2N2907 2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 Datasheet 2N2222 transistor 2N2222 transistor

    2N2222 NPN Transistor features

    Abstract: 2N2222 npn small signal current gain 2N2222A2 NPN transistor 2n2222 2n2222 surface mount 2N2222 2N2222A metal package 2n2222 npn switching transistor 2N2222ACECC BR 2N2222A NPN
    Text: SEME 2N2222A LAB MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN


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    PDF 2N2222A 2N2222" 2N2222 2N2222A 2N2222A/2907ADCSM 2N2222A/2907ADCSM-JQR-B 2N2222A-220M-ISO 2N2222ACECC 250MHz 2N2222 NPN Transistor features 2N2222 npn small signal current gain 2N2222A2 NPN transistor 2n2222 2n2222 surface mount 2N2222A metal package 2n2222 npn switching transistor BR 2N2222A NPN

    2N2222A motorola

    Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
    Text: MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A


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    PDF 2N2219/D 2N2219 2N2219A* 2N2222 2N2222A* 2N2219A 2N2222A 2N2219 2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222

    CDIL 2N2222 Transistor

    Abstract: 2N2222 TO-18 s parameters of 2N2222 pin configuration transistor 2N2222 2N2222 2N2222 cdil data sheet transistor 2n2222 PIN CONFIGURATION 2N2222 CDIL 2N2222 2N2221
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO


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    PDF ISO/TS16949 2N2221 2N2222 C-120 2222Rev 310303E CDIL 2N2222 Transistor 2N2222 TO-18 s parameters of 2N2222 pin configuration transistor 2N2222 2N2222 2N2222 cdil data sheet transistor 2n2222 PIN CONFIGURATION 2N2222 CDIL 2N2222

    CDIL 2N2222 Transistor

    Abstract: pin configuration transistor 2N2222 transistor 2N2222 2N2222 2N2221 Metal 2n2222 PIN CONFIGURATION 2N2222 s parameters of 2N2222 2N2221-2N2222 2N2222 transistor
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    PDF 2N2221 2N2222 C-120 2222Rev 210403E CDIL 2N2222 Transistor pin configuration transistor 2N2222 transistor 2N2222 2N2222 Metal 2n2222 PIN CONFIGURATION 2N2222 s parameters of 2N2222 2N2221-2N2222 2N2222 transistor

    2N2222

    Abstract: No abstract text available
    Text: SFT22907GW Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor DESIGNER’S DATA SHEET


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    PDF SFT22907GW 2N2222AU 2N2907AU 2N2222 2N2907 SFT22907 MIL-PRF-19500 SFT2222 SFT2907

    tr0032

    Abstract: 2N2222 2N2222AU 2N2907 2N2907AU SFT22907GW
    Text: SFT22907GW Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor DESIGNER’S DATA SHEET


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    PDF SFT22907GW SFT22907 2N2222AU 2N2907AU 2N2222 2N2907 SFT2222 MIL-PRF-19500 tr0032 2N2222 2N2222AU 2N2907 2N2907AU SFT22907GW

    2N2222A 331

    Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
    Text: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.


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    PDF bb53c 2N2222 2N2222A 2N2222 7Z85736 2N2222A 331 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a

    tl 2n2222

    Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
    Text: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar­ ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.


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    PDF bbS3T31 2N2222 2N2222A 2N2222A 100ms tl 2n2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222

    PN 2n2222A

    Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    PDF 2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907Â PN 2n2222A 3n2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23

    FN2222A

    Abstract: RT2222
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    PDF 2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907, FN2222A RT2222

    2N2222

    Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
    Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.


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    PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


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    PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


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    PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483

    fairchild 2N2222A

    Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
    Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min


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    PDF QDE75D4 2N718A 2N1613 fairchild 2N2222A 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222

    BFY50 equivalent

    Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
    Text: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments


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    PDF CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 BFY50 equivalent 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


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    PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    NPN C460

    Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
    Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25


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    PDF 2N3724A 2N3725A 2N3244 BF257 BS9300 2N2219A 2N2221 2N2222 NPN C460 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 CV7496

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    2n2222 similar

    Abstract: FF3725J 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist o f four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal am plification through to medium


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    PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J Moul60 2n2222 similar 2N2222 2N2483

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


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    PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62

    2n2907 or similar PNP

    Abstract: 2N2907 NPN Transistor 2N5859 NPN Transistors 2n2222 npn switching transistor DIL-4 package 2n2222 similar 2N2221 BSE9374 FF2221E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS — SILICON PLANAR QUAD TRANSISTORS Devices in this range consist o f four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal am plifica­


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    PDF FF3725J BSE9374 FF3467J FF2221E FF2221J 2N2221 FF2222E FF2222J FF2483J 2n2907 or similar PNP 2N2907 NPN Transistor 2N5859 NPN Transistors 2n2222 npn switching transistor DIL-4 package 2n2222 similar