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    2N222 TRANSISTOR Search Results

    2N222 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N222 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N222

    Abstract: No abstract text available
    Text: 2N222 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A) Absolute Max. Power Diss. (W)70m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N222

    MJE5742 equivalent

    Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493

    2n222 TRANSISTOR

    Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5740 MJE5742 MJE574xG O-220AB 2n222 TRANSISTOR transistor 2n222 of diode 2n222 1N493 mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor

    2n222 TRANSISTOR

    Abstract: ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MJE5740G MJE5742G MR826
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D 2n222 TRANSISTOR ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MR826

    2n222 TRANSISTOR

    Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2n222 TRANSISTOR 1N493 2N222 MJE5740G MJE5742G MR826

    MJE5740

    Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MR826 OF 2n222

    MJE5742

    Abstract: 1N493 2N222 2N2905 MJE5740 MR826 Darlington transistor 2N2905 MJE5742 equivalent
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 1N493 2N222 2N2905 MR826 Darlington transistor 2N2905 MJE5742 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D

    B5742G

    Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D B5742G high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR

    2N2222L

    Abstract: 2n222 TRANSISTOR MJE5742 MR826 1N493 2N222 MJE5740 MJE5740G MJE5742G
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2N2222L 2n222 TRANSISTOR MR826 1N493 2N222 MJE5740G MJE5742G

    transistor 2n222

    Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D transistor 2n222 MJE5740 1N493 2N222 MJE5742 MR826 of diode 2n222 1K68

    2n222 TRANSISTOR

    Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D 2n222 TRANSISTOR Ferroxcube core MR826 equivalent 1N493 transistor 2n222

    1N493

    Abstract: transistor 2N222
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D 1N493 transistor 2N222

    Untitled

    Abstract: No abstract text available
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D

    equivalent mje13005

    Abstract: No abstract text available
    Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 equivalent mje13005

    2n222 TRANSISTOR

    Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
    Text: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D 2n222 TRANSISTOR transistor 2n222 2n222 1N493 2N2905 MR826 of diode 2n222 MJE20

    2n222 TRANSISTOR

    Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
    Text: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,


    Original     		PDF MJE13005G MJE13005/D 2n222 TRANSISTOR MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222

    equivalent mje13005

    Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
    Text: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 MJE13005/D equivalent mje13005 transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G

    transistor 13003G

    Abstract: mje13003 equivalent 13003G MJE13003 transistor+13003G
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13003 MJE13003/D transistor 13003G mje13003 equivalent 13003G MJE13003 transistor+13003G

    pin diagram mje13003

    Abstract: mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13003 r14525 MJE13003/D pin diagram mje13003 mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003

    equivalent mje13005

    Abstract: transistor mje13005 application notes MJE13005 2n222 TRANSISTOR mje13005 application notes 1N493 MJE13005 on semiconductor 1N5820 2N222 MJE13005
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 r14525 MJE13005/D equivalent mje13005 transistor mje13005 application notes MJE13005 2n222 TRANSISTOR mje13005 application notes 1N493 MJE13005 on semiconductor 1N5820 2N222 MJE13005

    Untitled

    Abstract: No abstract text available
    Text: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,


    Original     		PDF MJE13005G MJE13005/D

    ULN 2303

    Abstract: 2n222 itt 2n2222 4431b 2N2272A itt 2N2222A 2M222 2N222J 2N2222A itt UFLN
    Text: s e m ic o n d u c t o r t e c h n ic a l d a ta 2N2221JAN, JTX, JTXV 2N2221AJAN, JTX, JTXV 2N2222JAN, JTX, JTXV 2N2222AJAN, JTX, JTXV, JANS CRYSTAL OfJCS 2805 Veterans Highway Suit 14 processed per MIL-S-19500/255 NPN Silicon Small-Signal Transistors RonkorKoma N Y. 1177C


    OCR Scan     		PDF 2N2221JAN, 2N2221AJAN, 2N2222JAN, 2N2222AJAN, MIL-S-19500/255 1177C 2M222t 2N222J 2N2221A 2N2272A ULN 2303 2n222 itt 2n2222 4431b itt 2N2222A 2M222 2N222J 2N2222A itt UFLN

    2N2222

    Abstract: 2n2222a 2N2221 2N222 st 2n2222a 2N2221A 2N2221-2N2222 2N2222 capacitance 2N2222 base capacitance ST 2n2222
    Text: SEMICONDUCTOR I te c h n ic a l d a ta 2N2222. 2N2222A CRY ST AlONCS 2805 Veterans Highway Suite 14 Ronkorkoma. N.Y. 1177t, NPN Silicon Small-Signal Transistors .designed for general-purpose switching and amplifier applications. M A X IM U M R A T IN G S Symbol


    OCR Scan     		PDF 2N2222. 2N2222A 1177t, 2N2221 2N2222 2N2221A 2N2221, 2N2222, 2N2221A, 2N222 st 2n2222a 2N2221-2N2222 2N2222 capacitance 2N2222 base capacitance ST 2n2222