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    2N115 Price and Stock

    Susumu Co Ltd RG2012N-1150-P-T1

    RES SMD 115 OHM 0.02% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1150-P-T1 Reel 1,000
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    • 100 -
    • 1000 $0.40425
    • 10000 $0.40425
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    Susumu Co Ltd RG2012N-1152-C-T5

    RES SMD 11.5KOHM 0.25% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1152-C-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.13125
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    Susumu Co Ltd RG2012N-1151-D-T5

    RES SMD 1.15K OHM 0.5% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1151-D-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.09526
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    Mouser Electronics RG2012N-1151-D-T5
    • 1 $0.35
    • 10 $0.25
    • 100 $0.172
    • 1000 $0.104
    • 10000 $0.092
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    Susumu Co Ltd RG2012N-1152-B-T1

    RES SMD 11.5K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1152-B-T1 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.18617
    • 10000 $0.18617
    Buy Now
    Mouser Electronics RG2012N-1152-B-T1
    • 1 $0.64
    • 10 $0.452
    • 100 $0.306
    • 1000 $0.2
    • 10000 $0.184
    Get Quote

    Susumu Co Ltd RG2012N-1150-C-T5

    RES SMD 115 OHM 0.25% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1150-C-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.13125
    Buy Now

    2N115 Datasheets (128)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N115 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N115 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N115 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N115 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N115 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1150 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1150 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1150 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1150 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1150 Unknown GE Transistor Specifications Scan PDF
    2N1150 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1150 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1150 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1150 Unknown Vintage Transistor Datasheets Scan PDF
    2N1151 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1151 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1151 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1151 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1151 Unknown GE Transistor Specifications Scan PDF
    ...

    2N115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1151

    Abstract: No abstract text available
    Text: 2N1151 Si NPN Lo-Pwr BJT 8.21 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N1151 Online Store 2N1151 Diodes Si NPN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1151 2N1151 com/2n1151

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    Abstract: No abstract text available
    Text: 2N1153 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1153

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    Abstract: No abstract text available
    Text: 2N1154 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)60m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150 I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1154

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    Abstract: No abstract text available
    Text: 2N1150 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1150

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    Abstract: No abstract text available
    Text: 2N1152 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1152

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    Abstract: No abstract text available
    Text: 2N1158 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1158

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    Abstract: No abstract text available
    Text: 2N1151 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1151

    TRANSISTORS BJT list

    Abstract: 2N1154
    Text: 2N1154 Si NPN Lo-Pwr BJT 8.88 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N1154 Online Store 2N1154 Diodes Si NPN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1154 2N1154 com/2n1154 TRANSISTORS BJT list

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    Abstract: No abstract text available
    Text: 2N1156 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)40m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1156

    asz21

    Abstract: AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2SA239 2n2398 s100
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 • 15 20 25 · 30 35 40 45 50 55 60 2N1158 2N615 2N2966 2N1158A 2SA239 2SA239 2N3399 2SA434 2SA435 2N1744 2N1747 2N1745 2N1868 2N1743 2N1742 2N1746 2N38 2N680 GT758 TR758A TR758A TR758A 2N578 2N1343 ASY50


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    PDF 2N1158 2N615 2N2966 2N1158A 2SA239 2N3399 2SA434 2SA435 2N1744 asz21 AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2n2398 s100

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    Abstract: No abstract text available
    Text: 2N1158A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1158A

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    Abstract: No abstract text available
    Text: 2N1155 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)50m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150 I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1155

    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Text: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


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    PDF 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136 2N1159 2N1537 N1137 Germanium power

    2N555

    Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
    Text: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40


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    PDF 42Amp) 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N555 Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N307 2N250

    2n1150

    Abstract: 2N1152 ir 0948 2N1151 2N1149 transistor kt 925 2N1153 2NM50
    Text: TYPES 2N1149 THRU 2N1153 N-P-N GROWN-JUNCTION TRANSISTORS B U L L E T I N N O . D L - S 6 9 2 2 3 7 , D E C E M B E R 1 9 6 1 - R E V I S E D A P R I L 1969 Oval Welded Package nw ch anical d a ta The transistor is in an oval welded package with glass-to-metal hermetic seal between case and leads.


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    PDF 2N1149 2N1153 2n1150 2N1152 ir 0948 2N1151 transistor kt 925 2NM50

    2N1156

    Abstract: 2N1154 2N1155
    Text: TYPES 2N1154, 2N1155, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 8 2 2 6 9 , J A N U A R Y 1 9 6 2 -R E V IS E D M A Y 1968 FORMERLY TYPES 951, 952, AND 953, RESPECTIVELY m echanical d a ta T h e t ra n s is to r is in a n o v a l w e ld e d p a c k a g e w ith g la s s -t o -m e t a l h e rm e tic s e a l b e t w e e n c a s e a n d le a d s.


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    PDF 2N1154, 2N1155, 2N1156 2N1154 2N1155 2N1156 2N1154. 2N115S.

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N4048

    Abstract: pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053
    Text: 59 GERMANIUM POWER TRANSISTORS C U R R E f JT G A IN SA T U R A T IO M V O LT A G ES @> @ TYPE N U M BER C A SE T YPE VCBO V V CEO V C ER V V EBO V 30 AM P GE 3MAN UM P VIP V C ES V M IN . hl:E | M AX. V CE V I 'c A V C E s V BE(s> V I V ’c A 'b I A Observe (—) Negative Polarity


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    PDF 2N2152 2N2153 2N2154 2N2156 2N2157 2N2158 2N1520 2N1521 2N1157 2N1157A 2N4048 pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


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    PDF 2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76