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    2N DIODE Search Results

    2N DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2N DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO72 package n-channel jfet

    Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
    Text: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS


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    PDF 2N/SST4416 2N4416A 2N/SST4416 2N4416A LS4416 LS4416A 2N4416 300mW OT-23 TO72 package n-channel jfet 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor

    4392 mosfet

    Abstract: MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


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    PDF 2N/PN/SST4391 2N/PN/SST4391, 1800mW 350mW 4392 mosfet MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402

    Untitled

    Abstract: No abstract text available
    Text: Series M33-2N Transformer Isolated, High Surge Current DC Solid-State Relay Part Number* Relay Description M33-2N Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.


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    PDF M33-2N MIL-PRF-28750 M33-2N M33-2N\072002\Q1

    m33-2n

    Abstract: M33 thermal pulse transformer fet M33 100 M33 transistor transistor m33
    Text: Series M33-2N Transformer Isolated, High Surge Current DC Solid-State Relay Part Number* Relay Description M33-2N Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.


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    PDF M33-2N MIL-PRF-28750 M33-2N M33-2N\042004\Q1 M33 thermal pulse transformer fet M33 100 M33 transistor transistor m33

    M33 thermal

    Abstract: M33-2N
    Text: DC Solid State Relay M33-2N TRANSFORMER ISOLATED, HIGH SURGE CURRENT Part Number* Relay Description DC M33-2N Solid State Relay With High Surge Current Capability * * The Y suffix denotes parameters tested to MIL-R-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.


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    PDF M33-2N MIL-R-28750 DC-18 M33 thermal M33-2N

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


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    PDF 625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    BU 290A

    Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N


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    2n6520

    Abstract: 2N6517 bc250 2n6519
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage


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    PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 2N6519 2N6520 1/2MSD7000 bc250 2n6519

    NPN Transistor 2N3055

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N 6576 2N 6577 2N 6578 NPN Silicon Pow er Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •


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    PDF 2N6576/D 2N3055 NPN Transistor 2N3055

    2n2646 ujt

    Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
    Text: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0


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    PDF 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


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    PDF E3B33c 000DQ5M lo-32 8 pin ic 3773

    Untitled

    Abstract: No abstract text available
    Text: I NOT RECO M M EN D ED FO R NEW D ES IG N S MOTOROLA SC DIODES/OPTO BSE D • b3b72SS 0060*106 T - z S 'I S 2N 4168 thru Silicon Controlled Rectifiers 2N 4174 2N 4184 Reverse Blocking Triode Thyristors . . . multi-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,


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    PDF b3b72SS ZN4168 2N4174 2N4184 2N4190

    2N1595 MOTOROLA

    Abstract: 2n1595
    Text: MOTOROLA SC DIODES/OPTO tiME D • b3b7255 OOäSTGl M0T7 2N 1595 thru S ilico n Controlled Rectifiers 2N 1599 Reverse Blocking Triode Thyristors These devices are glassivated planar construction designed for gating operation in mA//iA signal or detection circuits.


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    PDF b3b7255 2N1596 2N1599 2N1595 MOTOROLA 2n1595

    mem637

    Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
    Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M


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    MEM563C

    Abstract: MEM551 mem 551c diode 30 YF 2N4067 2N3609 MEM955 955A 550C 562C
    Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M


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    Untitled

    Abstract: No abstract text available
    Text: " SEMELAB LTD 37E D • 5133167 ODDDBfi^ fl ■ SMLB ,- T-39-11 JAN 0 5 19883 f\\Uji? { SEMELAB : 2N 6761 2N 6762 _ MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm APPLICATIONS • SWITCHING REGULATORS


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    PDF T-39-11 2N6761 T-39-H

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


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    PDF T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484

    2n6520

    Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO


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    PDF 2N6517 2N652Ö 2N6515 2N6519 2N6520 2N6515, 2N6516, 2N6519, 2N6517 MOTOROLA transistors aio 20

    2n h 2222a

    Abstract: 2N2218 2222a 2N5581 ip 2222A
    Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s


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    PDF 2N2218A 2N2219 2N2222 2N2218, /2N2219 O-205AD) 2N2218 /19/19A/22/22A 2n h 2222a 2222a 2N5581 ip 2222A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N 4123 2N 4124 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage v CBO 40 30 Vdc Emitter-Base Voltage


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    PDF 2N4123 2N4124 b3b7255 D0T27flb

    2n4401

    Abstract: 2N4400 2N4401 2n4401 equivalent 2n4400 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistors 2N 4400 2N 4401* NPN Silicon ‘ M otorola Preferred D evice COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Voltage Rating VCEO 40 Vdc C ollector-B ase Voltage


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    PDF 2N4400 2N4401 2n4401 2N4400 2N4401 2n4401 equivalent 2n4400 motorola

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bSE D 3» HARRIS uu s e m ic o n d u c to r • 4302271 DDMTOBb 371 « H A S 2N 7274D , 2N 7274R 2N 7274H REGISTRATION PENDING Currently Available as FRM230 D, R, H June 1993 _ . . R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s


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    PDF 7274D 7274R 7274H FRM230 TQ-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AA

    2n5484 equivalent

    Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
    Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G


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    PDF 2N5484/D O-226AA) 2n5484 equivalent 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent