TO72 package n-channel jfet
Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
Text: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
2N/SST4416
2N4416A
2N/SST4416
2N4416A
LS4416
LS4416A
2N4416
300mW
OT-23
TO72 package n-channel jfet
2N5019 "direct replacement"
2n4416 transistor spice
SST4500
Ultra High Input Impedance N-Channel JFET Amplifier
J201 Replacement
2n4416 transistor die
n-channel JFET sot23-6
JFET power transistor
2n3956 equivalent transistor
|
4392 mosfet
Abstract: MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402
Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)
|
Original
|
PDF
|
2N/PN/SST4391
2N/PN/SST4391,
1800mW
350mW
4392 mosfet
MOSfet 4392
dual P-Channel JFET sot23
P-Channel MOSFET 2N
jfet to 92
SST113
j174 EQUIVALENT
transistor U402
|
Untitled
Abstract: No abstract text available
Text: Series M33-2N Transformer Isolated, High Surge Current DC Solid-State Relay Part Number* Relay Description M33-2N Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
|
Original
|
PDF
|
M33-2N
MIL-PRF-28750
M33-2N
M33-2N\072002\Q1
|
m33-2n
Abstract: M33 thermal pulse transformer fet M33 100 M33 transistor transistor m33
Text: Series M33-2N Transformer Isolated, High Surge Current DC Solid-State Relay Part Number* Relay Description M33-2N Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
|
Original
|
PDF
|
M33-2N
MIL-PRF-28750
M33-2N
M33-2N\042004\Q1
M33 thermal
pulse transformer fet
M33 100
M33 transistor
transistor m33
|
M33 thermal
Abstract: M33-2N
Text: DC Solid State Relay M33-2N TRANSFORMER ISOLATED, HIGH SURGE CURRENT Part Number* Relay Description DC M33-2N Solid State Relay With High Surge Current Capability * * The Y suffix denotes parameters tested to MIL-R-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
|
Original
|
PDF
|
M33-2N
MIL-R-28750
DC-18
M33 thermal
M33-2N
|
transistor Amp 3055
Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@
|
OCR Scan
|
PDF
|
625ghted
O-237
transistor Amp 3055
transistor 2N 3055
TRANSISTOR bd 181
bdw 34 a
300A C 409
ic 3773
transistor bf 196
003G
33T4
2N3055
|
KSD 166
Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5
|
OCR Scan
|
PDF
|
MT-13
KSD 166
LT 7202 diode
Kertron
LA 4301
transistor KSP 13 801
KDA 1.2
2N5085
LT 7207
KSP 13 801
0/transistor KSP 13 801
|
BU 290A
Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181
Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N
|
OCR Scan
|
PDF
|
|
2n6520
Abstract: 2N6517 bc250 2n6519
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage
|
OCR Scan
|
PDF
|
2N6515,
2N6516,
2N6517
2N6519,
2N6520
2N6515
2N6519
2N6520
1/2MSD7000
bc250
2n6519
|
NPN Transistor 2N3055
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N 6576 2N 6577 2N 6578 NPN Silicon Pow er Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •
|
OCR Scan
|
PDF
|
2N6576/D
2N3055
NPN Transistor 2N3055
|
2n2646 ujt
Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
Text: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0
|
OCR Scan
|
PDF
|
2N6076
MPS2907A
2N4126
MPS-A55
2N4125
MPS-A56
2N3905
MPS-A93
2N3906
MPS-A92
2n2646 ujt
applications of ujt with circuits
applications of ujt
UJT 2N2646
2N2646 TO-92
UJT 2N4870
UJT 2N2646 oscillators
of UJT 2N2646
ujt transistor
UJT 2N2646 RANGE
|
8 pin ic 3773
Abstract: No abstract text available
Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442
|
OCR Scan
|
PDF
|
E3B33c
000DQ5M
lo-32
8 pin ic 3773
|
Untitled
Abstract: No abstract text available
Text: I NOT RECO M M EN D ED FO R NEW D ES IG N S MOTOROLA SC DIODES/OPTO BSE D • b3b72SS 0060*106 T - z S 'I S 2N 4168 thru Silicon Controlled Rectifiers 2N 4174 2N 4184 Reverse Blocking Triode Thyristors . . . multi-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,
|
OCR Scan
|
PDF
|
b3b72SS
ZN4168
2N4174
2N4184
2N4190
|
2N1595 MOTOROLA
Abstract: 2n1595
Text: MOTOROLA SC DIODES/OPTO tiME D • b3b7255 OOäSTGl M0T7 2N 1595 thru S ilico n Controlled Rectifiers 2N 1599 Reverse Blocking Triode Thyristors These devices are glassivated planar construction designed for gating operation in mA//iA signal or detection circuits.
|
OCR Scan
|
PDF
|
b3b7255
2N1596
2N1599
2N1595 MOTOROLA
2n1595
|
|
mem637
Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M
|
OCR Scan
|
PDF
|
|
MEM563C
Abstract: MEM551 mem 551c diode 30 YF 2N4067 2N3609 MEM955 955A 550C 562C
Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: " SEMELAB LTD 37E D • 5133167 ODDDBfi^ fl ■ SMLB ,- T-39-11 JAN 0 5 19883 f\\Uji? { SEMELAB : 2N 6761 2N 6762 _ MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm APPLICATIONS • SWITCHING REGULATORS
|
OCR Scan
|
PDF
|
T-39-11
2N6761
T-39-H
|
2n2222a SOT23
Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1
|
OCR Scan
|
PDF
|
T-33-Ã
2N1132
2N1483/
2N1484^
2N1485
2N1486
2N1613
2N1711
2N2060
2N2192
2n2222a SOT23
2N3904DCSM
2n1485
2N2453
2N3680
2n2222 sot23
BFX81
2N1483
2N1484
|
2n6520
Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO
|
OCR Scan
|
PDF
|
2N6517
2N652Ö
2N6515
2N6519
2N6520
2N6515,
2N6516,
2N6519,
2N6517 MOTOROLA
transistors aio 20
|
2n h 2222a
Abstract: 2N2218 2222a 2N5581 ip 2222A
Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s
|
OCR Scan
|
PDF
|
2N2218A
2N2219
2N2222
2N2218,
/2N2219
O-205AD)
2N2218
/19/19A/22/22A
2n h 2222a
2222a
2N5581
ip 2222A
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N 4123 2N 4124 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage v CBO 40 30 Vdc Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2N4123
2N4124
b3b7255
D0T27flb
|
2n4401
Abstract: 2N4400 2N4401 2n4401 equivalent 2n4400 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistors 2N 4400 2N 4401* NPN Silicon ‘ M otorola Preferred D evice COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Voltage Rating VCEO 40 Vdc C ollector-B ase Voltage
|
OCR Scan
|
PDF
|
2N4400
2N4401
2n4401
2N4400 2N4401
2n4401 equivalent
2n4400 motorola
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR bSE D 3» HARRIS uu s e m ic o n d u c to r • 4302271 DDMTOBb 371 « H A S 2N 7274D , 2N 7274R 2N 7274H REGISTRATION PENDING Currently Available as FRM230 D, R, H June 1993 _ . . R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s
|
OCR Scan
|
PDF
|
7274D
7274R
7274H
FRM230
TQ-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AA
|
2n5484 equivalent
Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G
|
OCR Scan
|
PDF
|
2N5484/D
O-226AA)
2n5484 equivalent
2N5486 MOTOROLA
2N5484
2N5486
2N5484 characteristics
2N5486 equivalent
|