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    2N 3055 TRANSISTOR Search Results

    2N 3055 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N 3055 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: industrial power transistors 135 SILICON NPN TRANSISTORS 15 Amp TYPE NUMBERS RATED BREAKDOWN VOLTAGES 2N 3055 SOT 9201 SOT 9202 SOT 9203 SOT 9204 SOT 9205 SOT 9206 SOT 9207 SOT 9208 SOT 9209 SOT 9210 Vea 100 55 100 120 140 55 80 100 120 140 40 VeE 60 45


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    PDF 1I111AX

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


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    PDF E3B33c 000DQ5M lo-32 8 pin ic 3773

    J2955

    Abstract: j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA M J2955 See 2N 3055 M J2955A (See 2N 3055A ) M edium -Pow er Com plem entary Silicon Transistors M J2500 . . . for use as output devices in complementary general purpose amplifier applica­


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    PDF MJ2500/D J2955 J2955A J2500 J2501* J3000 J3001* O-204AA J2955 j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor

    J2955

    Abstract: 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA I1DM 2N 3055* Com plem entary Silicon Power Transistors PNP . . . designed for general-purpose switching and amplifier applications. • • • •Motoroli Piefm ed Devtoe DC Current Gain — hFE = 2 0 -7 0 @ lc = 4 Adc


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    PDF J2955 2N3055 J2955 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor

    2n3055 motorola

    Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc


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    PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


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    PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    2N3055

    Abstract: 2N3055 curve 2n6253 2N6371 2N 6254
    Text: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts M A X IM U M RATINGS Ic V V V A laarca i h FE liv r a MIN M AX El A V<fE V Sat Voltages V be V« V V Test Conditions Ib Ic A A IE B P ma 2N 3055 117 100 60 7 15 20 70 4 4 1.1 1.8 4 .4 5.0 2N 6253 115 55 45 5 15 20


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    PDF 2N6371 -ill50 2N3055 2N6253 2N6254 TWX-510-224-6582 2N3055 curve 2N6371 2N 6254

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


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    PDF TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688

    TRANSISTOR BDX 538

    Abstract: bdx 540 TRANSISTOR BDX 14 bdx 538 BDX18 TRANSISTOR BDX 18n TRANSISTOR BDX 3055 5C pnp transistor TRANSISTOR BDX 536 transistor BDX 65
    Text: BDX 18 BOX 18 l\l PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN SIS TO R S PNP S IL IC IU M , BASE E P IT A X IE E Compì, of 2N 3055 LF large signal power amplification Am plification B F grands signaux de puissance High current switching Commutation fo rt courant


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    PDF CB-19 BDX18, BDX18N TRANSISTOR BDX 538 bdx 540 TRANSISTOR BDX 14 bdx 538 BDX18 TRANSISTOR BDX 18n TRANSISTOR BDX 3055 5C pnp transistor TRANSISTOR BDX 536 transistor BDX 65

    BDX 71

    Abstract: 3055C BD142 40251 C 5039 2N6354
    Text: POWER TRANSISTORS TYPE a: <_ j o a. A 0 9 3 A >h; > > LU O < _u X CO ^E c E ÜJ IL cj ( 3) s> < _o > X <o o LT3 < _u E tz > II O H @ g Ili JZ CM PACKAGE Hometaxial for linear and switching applications O a Ü. BD 142 NPN 50 45 15 12/60 4 1.1 4 117 2N 3055/BDX 10


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    PDF 3055/BDX 3055C 71/2N O-220 73/2N 75/2N BDX 71 BD142 40251 C 5039 2N6354

    2n3055

    Abstract: bd 3055
    Text: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B


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    PDF O-220 T0-220 2n3055 bd 3055

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


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    PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    2N 3055

    Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
    Text: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )


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    PDF TPu75 2N5294 2N6111 2N6109 2N 3055 2N3055 ESM434 BDX 71 ESM435 ESM142 84132N

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711

    2N3D55

    Abstract: SDT9202 2N3055 12V SDT9204 SDT9201 SDT9203 2N3055 2N3055 silicon solidev kuhnke relay 24vdc
    Text: Sem iconductors Solidev Silicon Power Transistors P H Y S IC A L D IM E N S IO N S Silicon N P N Power Transistors— 15 A m p FEATURES Rugged single diffused technology - 1MHz fT. Low saturation voltage - typically 0.3 V at Ic = 4 amps. High typical gain.


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    PDF 2N3D55 SDT9201 SDT9202 SDT9203 SDT9204 2N3055 5064A 35065X 2N3055 12V SDT9204 2N3055 silicon solidev kuhnke relay 24vdc

    2N5979

    Abstract: 2n5978 2N5985 2N5984 2SB585 2SB587 2SB588 2SB5 2SB568 st 2n3055
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF Te-25 2N5983fflS 2N5984 2N5985 2N6055 2SB585 2N6056tsa 25B586 2N6O57 2SB587 2N5979 2n5978 2N5985 2N5984 2SB587 2SB588 2SB5 2SB568 st 2n3055

    h21e

    Abstract: 3055 pnp transistor 3055 TRANSISTOR BDX 14 Transistors 2n3054
    Text: A C T IV E C O M PO N EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES NPN planar power transistors chips Transistors de puissance planar (pastilles) Type Type V CBO (V) V CEO (V) 'cm (A) V CE (V) h21E !C (m A ) min max J.2N 2890


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    2N3055

    Abstract: 2N3055 TO-220 2N3054 2N3440 2N3441 2N3442 2N3583 2N3584 2N6099 2N6101
    Text: NPN DIFFUSED JUNCTION TABLE 1 - NPN SILICON DIFFUSED JUNCTIO N TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a w ide variety


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    PDF 2N6103 T0-220 2N3055* 2N3442 2N6101 O-220 2N3441 2N3585 2N3584 2N3055 2N3055 TO-220 2N3054 2N3440 2N3583 2N6099

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    3055 5C pnp transistor

    Abstract: 3055 5c pnp transistor 3055 3055 transistor 3055 la transistor 2N 3055 2N 3055 transistor 468 2n 3055 transistor 3055 pnp
    Text: * 2 N 3055 S PNP S IL IC O N T R A N S I S T O R , H O M O B A S E T R A N S IS T O R P N P S IL IC IU M , H O M O B A S E A Devices u n d er C C Q 1971 n° 100 D is p o s it if s s o u m is a u C o n t r ô le c e n tra lis é d e q u a lit é (1 9 7 1 n ° 100)


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    PDF CB-19 3055 5C pnp transistor 3055 5c pnp transistor 3055 3055 transistor 3055 la transistor 2N 3055 2N 3055 transistor 468 2n 3055 transistor 3055 pnp

    BU 290A

    Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N


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    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


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    PDF TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135

    40872

    Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


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    PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111