PAL16R8A
Abstract: PAL16L8A PAL16R4A-2
Text: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds
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PAL16L8AM,
PAL16L8A-2M,
PAL16R4AM,
PAL16R4A-2M
PAL16R6AM,
PAL16R6A-2M,
PAL16R8AM,
PAL16R8A-2M
SRPS016
D2705,
PAL16R8A
PAL16L8A
PAL16R4A-2
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PDF
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PAL16L8A
Abstract: 81036112A PAL16R8A PAL16R4A-2
Text: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds
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Original
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PAL16L8AM,
PAL16L8A-2M,
PAL16R4AM,
PAL16R4A-2M
PAL16R6AM,
PAL16R6A-2M,
PAL16R8AM,
PAL16R8A-2M
SRPS016
D2705,
PAL16L8A
81036112A
PAL16R8A
PAL16R4A-2
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PDF
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pal16l8a
Abstract: PAL16R6A PAL16L8AMJ/883B PAL16R8A PAL16R4A-2
Text: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds
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Original
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PAL16L8AM,
PAL16L8A-2M,
PAL16R4AM,
PAL16R4A-2M
PAL16R6AM,
PAL16R6A-2M,
PAL16R8AM,
PAL16R8A-2M
SRPS016
D2705,
pal16l8a
PAL16R6A
PAL16L8AMJ/883B
PAL16R8A
PAL16R4A-2
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PDF
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CS223-2M
Abstract: CS223-2N
Text: Central CS223-2M CS223-2N TM Semiconductor Corp. 2.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER
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CS223-2M
CS223-2N
OT-223
CS223
11-May
CS223-2M
CS223-2N
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-4E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-70/-90/-12 • DESCRIPTION The MBM29F017A is a 16M-bit, 5.0 V-Only Flash memory organized as 2M bytes of 8 bits each. The 2M bytes of data is divided into 32 sectors of 64K bytes for flexible erase capability. The 8 bit of data will appear on DQ7 to
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DS05-20843-4E
MBM29F017A-70/-90/-12
MBM29F017A
16M-bit,
48-pin
F0306
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PDF
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E6C3-AG5C-c
Abstract: No abstract text available
Text: E6C3-AG5C-C 720P/R 2M | OMRON Industrial Automation Global Home Our Strengths Products Technical Support Sitemap Global Network About Us Contact What's New Home > Products > Sensors > Rotary Encoders > Absolute > E6C3-A > E6C3-AG5C-C 720P/R 2M Sensors Rotary Encoders
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Original
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720P/R
256P/R
EN50081-2
EN55011
IEC61000-4-2
IEC61000-4-3
E6C3-AG5C-c
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PDF
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Untitled
Abstract: No abstract text available
Text: VCUT05B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 5.5 V
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Original
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VCUT05B1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VCUT05B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 5.5 V
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VCUT05B1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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"Silicon Controlled Rectifier"
Abstract: 100 amp silicon controlled rectifier Marking A2s CS92-2M CS92-2N
Text: Central CS92-2M CS92-2N* TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 2.0 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS92-2M and CS92-2N are epoxy molded Silicon Controlled Rectifiers designed for sensing circuit applications and control systems.
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CS92-2M
CS92-2N*
CS92-2N
22-April
"Silicon Controlled Rectifier"
100 amp silicon controlled rectifier
Marking A2s
CS92-2M
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LLP1006-2M
Abstract: VBUS05L1-DD1-G-08
Text: VBUS05L1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Low Cap. Single Line ESD-Protection Diode in LLP1006-2M Features • • • • • • • Very low load capacitance CD = 0.3 pF Ultra compact LLP1006-2M package Low package height < 0.4 mm
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC
2002/96/EC
18-Jul-08
VBUS05L1-DD1-G-08
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LLP1006-2M
Abstract: vcut05b1-dd1
Text: VCUT05B1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M Features • • • • • • • Ultra compact LLP1006-2M package Low package height < 0.4 mm 1-line ESD-protection Working range ± 5.5 V
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Original
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VCUT05B1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC
2002/96/EC
18-Jul-08
vcut05b1-dd1
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PDF
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Untitled
Abstract: No abstract text available
Text: VCUT03B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 3.5 V
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Original
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VCUT03B1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VCUT03B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 3.5 V
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Original
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VCUT03B1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: UG42S6428GSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 2M x 8 SDRAM with LVTTL, 2 banks & 2K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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Original
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UG42S6428GSG-PL
PC100
UG42S6428GSG-PL
144-Pin
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LLP1006-2M
Abstract: marking 2M diode
Text: VBUS05L1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm 2 1 • 1-line ESD-protection • Working range ± 5.5 V
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
11-Mar-11
marking 2M diode
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21789
Abstract: VCUT03B1-DD1-G-08 VCUT03B1 VCUT03B1-DD1 transistor 21789 LLP1006-2M
Text: VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M Features • • • • • • • Ultra compact LLP1006-2M package Low package height < 0.4 mm 1-line ESD-protection Working range ± 3.5 V
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Original
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VCUT03B1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC
2002/96/EC
18-Jul-08
21789
VCUT03B1-DD1-G-08
VCUT03B1
VCUT03B1-DD1
transistor 21789
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PDF
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Untitled
Abstract: No abstract text available
Text: VCUT05B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 5.5 V
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Original
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VCUT05B1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VCUT03B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 3.5 V
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Original
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VCUT03B1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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LLP1006-2M
Abstract: LLP1006 esdprotection VBUS05L1-DD1 81188
Text: VBUS05L1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm 2 1 • 1-line ESD-protection • Working range ± 5.5 V
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Original
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
18-Jul-08
LLP1006
esdprotection
VBUS05L1-DD1
81188
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-5E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The
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DS05-20889-5E
MBM29PDS322TE10/11
MBM29PDS322BE10/11
MBM29PDS322TE/BE
32M-bit,
63-ball
F0305
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PDF
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Untitled
Abstract: No abstract text available
Text: Central" CS223-2M CS223-2N Semiconductor Corp. 2.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER
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OCR Scan
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CS223-2M
CS223-2N
OT-223
380ps
11-May
OT-223
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PDF
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Untitled
Abstract: No abstract text available
Text: Central" CS92-2M CS92-2N* Semiconductor Corp. SILICON CONTROLLED RECTIFIER 2.0 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS92-2M and CS92-2N are epoxy molded Silicon Controlled Rectifiers designed for sensing circuit applications and control systems.
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OCR Scan
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CS92-2M
CS92-2N*
CS92-2N
S92-2N*
22-April
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PDF
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2M20A
Abstract: gk1k
Text: Central" CQ92-2M CQ92-2N* 2.0 Semiconductor Corp. TRIAC AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ92-2M and CQ92-2N are epoxy molded silicon Triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.
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OCR Scan
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CQ92-2M
CQ92-2N*
CQ92-2N
CS92-2N*
22-April
2M20A
gk1k
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PDF
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SOT89 MARKING CODE 43
Abstract: No abstract text available
Text: Central" CQ89-2M CQ89-2N Semiconductor Corp. 2.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.
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OCR Scan
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CQ89-2M
CQ89-2N
OT-89
10-May
OT-89
SOT89 MARKING CODE 43
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PDF
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