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    2F4000 Search Results

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    2F4000 Price and Stock

    Bourns Inc SF-3812F4000T-2

    FUSE BRD MT 40A 250VAC 100VDC
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    DigiKey SF-3812F4000T-2 Digi-Reel 2,007 1
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    SF-3812F4000T-2 Cut Tape 2,007 1
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    SF-3812F4000T-2 Reel 2,500
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    Avnet Abacus SF-3812F4000T-2 Reel 21 Weeks 2,500
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    Mouser Electronics SF-3812F4000T-2 1,220
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    Farnell SF-3812F4000T-2 Reel 19 Weeks, 1 Days 2,500
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    SF-3812F4000T-2 Cut Tape 19 Weeks, 1 Days 2,500
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    Avnet Americas SF-3812F4000T-2 Reel 18 Weeks 2,500
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    Master Electronics SF-3812F4000T-2
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    Sensata Circuit Breakers IUGH66-1-52F-40.0-01

    CIR BRKR,HYDMAG
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    DigiKey IUGH66-1-52F-40.0-01 Bulk 3
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    Master Electronics IUGH66-1-52F-40.0-01
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    Sager IUGH66-1-52F-40.0-01 1
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    Sensata Circuit Breakers IELK1-1-62F-40.0-01-V

    CIR BRKR MAG-HYDR LEVER 40A
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    DigiKey IELK1-1-62F-40.0-01-V Bulk 3
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    Master Electronics IELK1-1-62F-40.0-01-V
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    Sager IELK1-1-62F-40.0-01-V 1
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    Samtec Inc MMSD-25-22-F-40.00-S-K

    MINI-MATE CABLE ASSEMBLY, 0.100"
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    DigiKey MMSD-25-22-F-40.00-S-K Bulk 1
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    Mouser Electronics MMSD-25-22-F-40.00-S-K
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    Avnet Americas MMSD-25-22-F-40.00-S-K Bulk 1
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    Master Electronics MMSD-25-22-F-40.00-S-K
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    Sager MMSD-25-22-F-40.00-S-K 1
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    Sensata Circuit Breakers IELK1-1REC4R-52F-40.0-01-V

    CIR BRKR HYD MAG
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    Master Electronics IELK1-1REC4R-52F-40.0-01-V
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    2F4000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N,

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    PDF S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    PDF S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N

    pdl128g70

    Abstract: SA90 1D400
    Text: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4


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    PDF Am29PDL128G 16-Bit/4 32-Bit) 128Mbit 16-bit) Am29F Am29LV LAB080 pdl128g70 SA90 1D400

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


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    PDF S70GL01GN00 2B60000 S29GL512N gl512 2200-0002

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256

    MBM29XL12DF

    Abstract: No abstract text available
    Text: MBM29XL12DF-70/80 Data Sheet Retired Product MBM29XL12DF -70/80 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29XL12DF-70/80 MBM29XL12DF DS05-20901-2E F0307 ProductDS05-20901-2E MBM29XL12DF

    1A4000

    Abstract: No abstract text available
    Text: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29PDL128G Am29PDL127H 1A4000

    gl256N

    Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N gl256N S29GL512N datasheet S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N

    SA418

    Abstract: 346000 S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N SA418 346000

    Untitled

    Abstract: No abstract text available
    Text: molate 128K X 32 FLASH MODULE PUMA 2F4000-15/20/25 issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module Pin Definition Features Fast access times of 150/200/250 ns. User Configurable as 32 /1 6 / 8 bit wide.


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    PDF 2F4000-15/20/25 MIL-STD-883, A0-A16

    Untitled

    Abstract: No abstract text available
    Text: Issue 1.0: October 1989 PUMA 2F4000 4 M e g a b i t C M O S F LASH EE P R OM PU MA PUMA 2F4000 M : : !:;r . • ' ADVANCE PRODUCT INFORMATION 4,194,304 CMOS High Speed FLASH™ EEPROM Features ' P i n Definition User Configurable as 8,16, or 32 bit wide


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    PDF 2F4000 1200mW 650mW 375mW MIL-STD-883C A0-16 D0-D31

    2R37

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC MOE bBSBB?^ D 0000503 Ô IflOC 7 ^ -/3 -2 7 PUMA 2F4000 PUMA 2F4000-12/15/20 Issue 1.1 : April 1991 ADVANCE PRODUCT INFORMATION Mosaic Sem iconductor In c Pin Definition 4,194,304 bit CMOS High Speed FLASH EEPROM Block Diagram A 0 - A 1 6 -^


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    PDF 2F4000 2F4000-12/15/20 600mW 300mW 150mW 2F4000MB-20 2R37

    EVD30

    Abstract: No abstract text available
    Text: 128K x 32 FLASH MODULE molate PUMA 2F4000-15/20/25 Issue 2.0: May 1994 PRELIMINARY S e m ic o n d u c to r r In c . 4,194,304 bit CMOS FLASH Memory Module Features Pin Definition 1 Fast access times of 150/200/250 ns. User Configurable as 32 /1 6 / 8 bit wide.


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    PDF 2F4000-15/20/25 MIL-STD-883 A0-A16 EVD30

    Untitled

    Abstract: No abstract text available
    Text: m s*. ,-: m 128K X 32 FLASH MODULE molate PUMA 2F4000-15/20/25 Issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION ie m ic o n d u c to r 4,194,304 bit CM O S FLASH Memory Module Pin Definition Features 12 23 o O O De WE2 0 1 5 O n. o DO CS2 0 14 o O o 010 GND 013


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    PDF 2F4000-15/20/25

    2F4000

    Abstract: 2F4000-15
    Text: 128K x 32 FLASH MODULE m o l a t e PUMA 2F4000-15/20/25 Issue 2.0: May 1994 PRELIMINARY S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module ^P in D efinition Features 1 Fast access times of 150/200/250 ns. User Configurable as 32 /1 6 /8 bit wide.


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    PDF MIL-STD-883, A0-A16 D8-15 D16-23 b3S33 aDD22bT 2F4000 2F4000-15

    PUMA2F4002

    Abstract: No abstract text available
    Text: JUL o 8 199J PUMA 2F4002 molate PUMA 2F4002-90/12/15/20 Issue 1.1 : April 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. Pin Definition 4,194,304 bit CMOS FLASH Memory Module Features FLASH Eraseable Non-Volatile Memory Module. User Configurable as 8, 16 or 32 bit wide.


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    PDF 2F4002 2F4002-90/12/15/20 MIL-STD-883C. MIL-STD-883C PUMA2F4002