CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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Original
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PDF
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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ISO/TS16949
OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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DSWM9040
Abstract: M24308/3-2F SP40T transistor j42 bite 15-pin D type connector J31-J32 30J40
Text: F E AT U R E S MODEL NO. DSWM9040 350 - 450 MHz 1.7 dB Insertion Loss 55 dB Isolation 6 Line Encoded TTL Control Constant Phase Bite Circuitry SMA Connectors HDI CONNECTOR 15 PIN M24308/3-2F P IN Dio d e Switch S P40T J1 .218 DIA 6 HOLES 8.250 .25 J3 J38 J11 J12 J13-ROW 2
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DSWM9040
M24308/3-2F
J13-ROW
J33-ROW
J23-ROW
DSWM9040
M24308/3-2F
SP40T
transistor j42
bite
15-pin D type connector
J31-J32
30J40
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Untitled
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. DSWM9040 350 - 450 MHz 1.7 dB Insertion Loss 55 dB Isolation 6 Line Encoded TTL Control Constant Phase Bite Circuitry SMA Connectors HDI CONNECTOR 15 PIN M24308/3-2F P IN Dio d e Switch S P40T J1 .218 DIA 6 HOLES 8.250 .25 J3 J38 J11 J12 J13-ROW 2
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J33-ROW
J23-ROW
J13-ROW
DSWM9040
M24308/3-2F
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CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
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CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
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CMBT2907
CMBT2907A
150mA;
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Untitled
Abstract: No abstract text available
Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR
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CMBT2907
CMBT2907A
CMBT2907
150mA;
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BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
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BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
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W15NA
Abstract: No abstract text available
Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14
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E3fl33T4
BC849
BC850
BC849B
BC849C
BC850B
8C850C
W15NA
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smd diode schottky code marking 2F
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.
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smd diode marking YK
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use
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IC marking jw
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_
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BC849
BC850
BC849B
BC849C
BC850B
100frequency
IC marking jw
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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2fl40
Abstract: DIODE smd marking CODE YX smd code marking yx SMD diode JB
Text: Super Fast Recovery Diode mtm OUTLINE Package : 2F D2FL40 Single Diode Unit-mm Weight 0.16g Typ / C ath o d e m a rk 400V 1.3A Feature • /J v P S M D • Small SMD • fiy - Y X • Low Noise • trr=50ns • trr=50ns ' É p i 3 angiH!0j »7.X \ H-yI-ril9-(W)
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D2FL40
2fl40
DIODE smd marking CODE YX
smd code marking yx
SMD diode JB
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smd diode marking 3fs
Abstract: smd DIODE 3FS smd diode schottky code marking UX smd diode marking LM smd diode schottky code marking 2F Schottky Diode Marking UX diode Marking Code lm MARKING 3FS
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 2F D3FS6 o i Unit^mm Weight 0.16g Typ 7 -F v -? Cathode m ark 60V 3A ®i Feature • /J v P S M D • S m all SM D • Tj=150°C • Tj=150°C » P R R S M T’A ' ^ V ï / i f i l Œ » P r r s m Rating
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smd DIODE code marking kA
Abstract: smd diode schottky code marking 2F kl 60 smd schottky diode s3 SMD RNA j53z SMD diode KL smd diode HB
Text: Schottky Barrier Diode wnnw OUTLINE Single Diode D3FS6 U nit I mm Package : 2F Weight 0.16« Typ •hy —K v - ? ' C a th o d e m a i 60V 3A Feature • /> 3 !iS M D • P rrs m T ’A - S V î ' i Æ ü I • P rrsm 5 i - B ■ • Small SMD k <J>°—
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J53Z-1)
smd DIODE code marking kA
smd diode schottky code marking 2F
kl 60
smd schottky diode s3
SMD RNA
j53z
SMD diode KL
smd diode HB
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r
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J53Z-1)
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smd DIODE 3FS
Abstract: smd diode marking 3fs
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS6 U n it! mm Package : 2F W eight 0.16g Typ ij 7 - K v - * ' C ulliod o mm k 3FS 6 8D 60V 3A Feature • /jv s y s M D yîsxMîS. • P rrs m ;F K 5 • Small SMD • P h r s m Rating W T y p e No.
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501Iz
J532-1)
smd DIODE 3FS
smd diode marking 3fs
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Untitled
Abstract: No abstract text available
Text: B 1-COLOR O P E R A T I N G DIALIGHT P/N CATHODE MARKING COLOR CHARACTERISTICS mA M I N . TY P . M A X . .149/.134 [3.80/3.40] 5 9 7 - 2 0 0 1 - 2 1 3F 5 9 7 - 2 0 0 1 -202F RED 5 9 7 - 2 3 0 1 - 2 1 3F 597-2301 -2 0 2F GREEN 5 9 7 - 2 4 0 1 - 2 1 3F 5 9 7 - 2 4 0 1 -202F
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-202F
16mm2
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Diode Marking ef
Abstract: Diode type SMD marking PJ smd marking pj marking smd NU pj SMD diode smd diode pj D2FS4 smd Pj 75 pj 71 diode
Text: Schottky Barrier Diode wnnw OUTLINE Single Diode D2FS4 Unit-mm Package I 2F Weight 0.16g Typ ay-K -y-? / Cathode mark 40V 1,6A Feature • /JvffiSMD • Small SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating •w.f.ns»? Type No. Main Use • D C /D C u y / K - 9
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J53Z-1)
Diode Marking ef
Diode type SMD marking PJ
smd marking pj
marking smd NU
pj SMD diode
smd diode pj
D2FS4
smd Pj 75
pj 71 diode
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2FL20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 2F m tm D2FL20U U n it- m m W e ig h t 0 .1 6 g T y p io y - F - e - ? / C athode m a rk 200V 1.5A 'Iggsl Feature • /Jv P S M D • Sm all SM D • f îy - f X ' • Low Noise • trr=35ns • trr=35ns
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D2FL20U
2FL20U
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D3FJ10
Abstract: smd marking Yd J532
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 2F D3FJ10 100V3A U nit-m m W eight 0 .1 6 g T y p iU7 - K v - ? Feature • /JvSUSMD • Small SMD • Tj=150°C • <SIr= 0.4mA • Tj=150°C • Low lR = 0 .4 m A U (. < 11 • • Resistance for thermal run-away
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D3FJ10
Tj-150Â
T/-10
D3FJ10
smd marking Yd
J532
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3fs 4a
Abstract: smd DIODE 3FS smd diode marking 3fs
Text: Schottky Barrier Diode Single Diode O U T L IN E w n n w D3FS4A U nit! mm P a c k a g e : 2F Weight 0.16g Typ •hy - K - 7 - y 4 0 V 2 .6 A / C arhode m ark Feature I m • Small SMD • Low Vf=0.45V • Prbsm Rating • /JvS yS M D • f f i V f = 0.45 V
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a77 smd
Abstract: D2FK60 J532 smd diode 0L
Text: Super Fast Recovery Diode mtm OUTLINE Package : 2F D2FK60 Single Diode U n it-m m W e ig h t 0 .1 6 g T yp ¿ 7 -P V -? 600V 1.5A ’ • /JvSUSMD • S m all S M D •ra ttŒ • trr=75ns • trr= 75n s • < S V f = 1 .3 V • Low V f= 1.3V * v 2FK
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D2FK60
i50Hz
a77 smd
D2FK60
J532
smd diode 0L
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