2SB0968
Abstract: 2SD1295
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.75±0.1 2.3±0.1 (5.3) (4.35) (3.0) 4.6±0.1 • Absolute Maximum Ratings TC = 25°C Unit 50 V Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1295
SC-63
2SB0968
2SD1295
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2SD1294
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SD1294 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN DESCRIPTION
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2SD1294
100mA
2SD1294
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2SD1294
Abstract: SC-65
Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1294 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25 C)
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2SD1294
SC-65
2SD1294
SC-65
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2SB968
Abstract: 2SD1295 ic 731
Text: Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification Complementary to 2SD1295 2.3±0.1 1 2 1:Base 2:Collector 3:Emitter U Type Package 3 Ta=25˚C Parameter Symbol Ratings Unit
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2SB968
2SD1295
200MHz
2SB968
2SD1295
ic 731
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm • Features 0.75±0.1 2.3±0.1 4.6±0.1 Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)
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2002/95/EC)
2SD1295
2SB0968
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2SD1296
Abstract: RL-4S
Text: Product Specification www.jmnic.com 2SD1296 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching industrial use
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2SD1296
VCC60V
2SD1296
RL-4S
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100MA 45 V NPN
Abstract: to-3p 2SD1294 2SD129
Text: Inchange Semiconductor Product Specification 2SD1294 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Wide area of safe operation ・High DC current gain ・Darlington APPLICATIONS ・Power regulator for line operated TV PINNING PIN DESCRIPTION
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2SD1294
100mA
100MA 45 V NPN
to-3p
2SD1294
2SD129
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2SD1296
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SD1296 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching
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2SD1296
VCC60V
2SD1296
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2SD1290
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SD1290 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・For color TV horizontal deflection
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2SD1290
2SD1290
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2SB0968
Abstract: 2SB968 2SD1295
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
2SB0968
2SB968)
2SD1295
2SB0968
2SB968
2SD1295
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2SB0968
Abstract: 2SB968 2SD1295
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 ue pl d in an c se ed lud
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2002/95/EC)
2SB0968
2SB968)
2SD1295
2SB0968
2SB968
2SD1295
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features
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2002/95/EC)
2SB0968
2SB968)
2SD1295
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2SB0968
Abstract: 2SD1295
Text: Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.8 max. 2.5±0.1 • Possible to solder radiation fin directly to printed circuit board • Output of 4 W can be obtained by a complementary pair with 2SB0968 0.5±0.1 1.8±0.1 7.3±0.1
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2SD1295
2SB0968
2SB0968
2SD1295
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Untitled
Abstract: No abstract text available
Text: 2SD1296 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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2SD1296
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2SD130
Abstract: power transistor mrc 438 2SD180 2SD129 2SD130 BL mrc 438 2SD130BL 2SD18 A/power transistor mrc 438 2sd12
Text: y 2Sd129 À SILICON NPN DIFFUSED JUNCTION TRANSISTOR 2 S d 13 0 O o U iiit Power Am plifier A p p l i c a t i o n s - in mrc 0 1 5 .7 MAX. ÂÜtflE t - - r : VC E 0 - 8ÖV I £12.5 MAX. * ! » 15 BE # ffiv,' : VC E s a t - 1 . 5 V (Max.) F P J 2 5 W ( T c - 25°C )
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2SD129
2SD130
2SD129
2SD18
2SD130
2SP129-R
2SD130-B
2SD12
power transistor mrc 438
2SD180
2SD130 BL
mrc 438
2SD130BL
A/power transistor mrc 438
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D1294
Abstract: TOSHIBA TV IC regulator 2SD1294 AC73 1S1888 equivalent
Text: TOSHIBA 2SD1294 2 S D 1 294 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV 15.9MAX. . 2.0 • / / , Excellent Wide Safe Operating Area 80 W-s at Tc = 25°C Included Avalanche Diode :V z = 6 0 ± 1 5 V
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2SD1294
1S1888
D1294
TOSHIBA TV IC regulator
2SD1294
AC73
1S1888 equivalent
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2SD1296
Abstract: No abstract text available
Text: 2SD 1296 2SD1296 I S I P N X fc° $ +• is ~j* V N PN Silicon Epitaxial Darlington Transistor $ ¥ — XJ > V > & m ) y IJ 3 V F 7 lx4'yT> 7m Audio Frequency Power Amplifier Low Speed High Curreut Switching Industrial Use i i f f l ^ » H / P A C K A G E D IM E N S IO N S
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2SD1296
2SD1296
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2SD1267
Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290
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2SD1267
2SD1267A
2SD1268
2SD1270
2SD1271
2SD1271A
2SD1272
2SD1279
SC-62
2SD1280
2SD1267
2SD1267A
2SD1271
2SD1273
2SD1273A
2SD1274
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2SD1297
Abstract: No abstract text available
Text: 2SD1297 2SD1297 N P N n i f c d U>b =7>i>7.^ y - < j > h >mm NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use I i f f l 4 # * / FEATURES o r - 'J > h fl- l2]/P A C K A G E DIMENSIONS
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2SD1297
PWS300
PWS350
2SD1297
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Untitled
Abstract: No abstract text available
Text: 2SD1294 SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV. Unit in mm 0 z.2 ±az FEATURES : / . E xcellent W i d e Safe Operating Area 80 W . s e c at Tc=25°C . Included A b a l a n c h e D iode : Vz=60il5V . High DC Current G a i n : hFjr=2000 — 20000
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2SD1294
60il5V
CL0047AP
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2SD1292
Abstract: No abstract text available
Text: ROHM CO L T D ' - MQE D 7 f i 2 f l W O Q O S Ô 4 L 2 • RHM h 7 > y 7 s $ / T ransistors 2SD1292 7 -27-lJ 2SD1292 I fcf £ # v 7 fr y * ^ NPN v y =3 > h 7 > v X £ ^ Ib ^ iilS f f l/M e d iu r n Power Amp, Epitaxial Planar NPN Silicon Transistor • *WB>f&IS/'Dftn6f»sions Unit: mm
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2SD1292
-27-lJ
2SD1292
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KA 3264
Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Text: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A
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2SC2979
2SC3508
2SC2555
2SC3322
2SD1457
2SC3306
2SC3509
2SD1706
2SD1707
KA 3264
2SC3136
2SD689
2SC3259
K 3264
2SC2456
2SC2482
2SC3019
2SD1431
2sc2371
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2SD1292
Abstract: transistors 2sd 2500
Text: h ~Py V 7^$ /Transistors O C r i 4 O O O m w 2SD1292 yU=]> Epitaxil Planar NPN Silicon Transistor 4 l^ ^ J l i llliffl/M e d iu m Power Amp. m • v|-;£|23/Dim ensions Unit : mm 1) V CE O = 8 0 V t L ' „ 2) lc = 1 A £ * # v , \ , 3) FifeO V ~ T7 U x 1 t i ' & l ' , ,
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2SD1292
23/Dim
2SD1292
transistors 2sd 2500
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NTC2335
Abstract: 2SA603 2SC2719 2SA1154 28c128 2SA1151 2sc2720 2SC2718 NTD565 2SA1152
Text: Darlington Power Transistors ' ^ U c DC lA] Package \ Vceo M \ 60 TO-126 .80 TO-126 3.0 2.0 1.5 5.0 7.0 NTD985 NTB794 NTD986 NTB795 100 T0-220AB NTD560 NTB601 400 TO-220AB NTD987 NTD1162 (300V) 15 25 2SD1296 (MP-80) NTD412 (TO-3) 2SD1297 (MP-80) 10 NTD411
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O-126
NTD985
NTB794
NTD986
NTB795
NTD411
O-220AB
NTD560
NTB601
NTC2335
2SA603
2SC2719
2SA1154
28c128
2SA1151
2sc2720
2SC2718
NTD565
2SA1152
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