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    2SK294 Search Results

    2SK294 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2940STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 45A 13Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
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    2SK294 Price and Stock

    Sanken Electric Co Ltd 2SK2943

    MOSFET N-CH 900V 3A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2943 Tube 3,750
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    • 10000 $2.0875
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    Toshiba America Electronic Components 2SK2949(Q)

    Trans MOSFET N-CH Si 400V 10A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2949(Q) 80 80
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    • 100 $1.0803
    • 1000 $1.0803
    • 10000 $1.0803
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    Quest Components 2SK2949(Q) 64
    • 1 $2.508
    • 10 $2.508
    • 100 $1.3794
    • 1000 $1.3794
    • 10000 $1.3794
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    NEC Electronics Group 2SK2941-ZJ-E1

    2SK2941-ZJ-E1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2941-ZJ-E1 2,496
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $1.05
    • 10000 $1.05
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    2SK294 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK294 Hitachi Semiconductor SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING Scan PDF
    2SK294 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK294 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK294 Unknown FET Data Book Scan PDF
    2SK294 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK2940 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2940 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2940L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940L Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 45; Pch : 75; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: 0.015; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff ( us) typ: 0.32; Package: LDPAK (L) Original PDF
    2SK2940L Renesas Technology High Speed Power Amplifier, 60V 45A 75W, MOS-FET N-Channel enhanced Original PDF
    2SK2940L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2940S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2940S Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 45; Pch : 75; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: 0.015; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff ( us) typ: 0.32; Package: LDPAK (S)- (1) Original PDF
    2SK2940S Renesas Technology SMD, High Speed Power Amplifier, 60V 45A 75W, MOS-FET N-Channel enhanced Original PDF

    2SK294 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K294

    Abstract: 2SK2949 K2949
    Text: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.)


    Original
    2SK2949 K294 2SK2949 K2949 PDF

    2SK2949

    Abstract: 25VDSS
    Text: 2SK2949 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2949 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.4 Ω (標準) z オン抵抗が低い。


    Original
    2SK2949 2-10S1B K2949 2002/95/EC) 2SK2949 25VDSS PDF

    2SK2941

    Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. RDS on 1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)


    Original
    2SK2941 30ecial: 2SK2941 C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035 PDF

    2SK2945

    Abstract: FM20
    Text: 2SK2945 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V(BR) DSS VGSS ±30 V ID ±5 A ±20 35 (Tc = 25ºC) ID (pulse) *1 PD EAS *2 120 min 900 Ratings typ I GSS I DSS


    Original
    2SK2945 FM100 2SK2945 FM20 PDF

    2SK2940

    Abstract: Hitachi DSA00239
    Text: 2SK2940 L ,2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original
    2SK2940 ADE-208-563B Hitachi DSA00239 PDF

    2SK2940

    Abstract: Hitachi DSA0044
    Text: 2SK2940 L ,2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original
    2SK2940 ADE-208-563B Hitachi DSA0044 PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original
    2SK2940 ADE-208-563B 15Sierra D-85622 Hitachi DSA002749 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original
    2SK2940 ADE-208-563 Hitachi DSA002780 PDF

    2SK2949

    Abstract: No abstract text available
    Text: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.)


    Original
    2SK2949 2SK2949 PDF

    2SK2940

    Abstract: 2SK2940L-E 2SK2940STL-E PRSS0004AE-A
    Text: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1054-0400 (Previous: ADE-208-563B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original
    2SK2940 REJ03G1054-0400 ADE-208-563B) PRSS0004AE-A PRSS0004AE-B 2SK2940L-E 2SK2940STL-E PRSS0004AE-A PDF

    2SK2949

    Abstract: No abstract text available
    Text: 2SK2949 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2949 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.4 Ω (標準) z オン抵抗が低い。


    Original
    2SK2949 2-10S1B K2949 2002/95/EC) 2SK2949 PDF

    2SK2943

    Abstract: FM20
    Text: 2SK2943 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V (BR) DSS VGSS ±30 V ID ±3 A ±12 30 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 900 Unit max I GSS V I D = 100µA, VGS = 0V


    Original
    2SK2943 2SK2943 FM20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.)


    Original
    2SK2949 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK294 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30‚ Minimum Operating Temp (øC)


    Original
    2SK294 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance


    Original
    2SK2949 PDF

    K294

    Abstract: 2SK2949
    Text: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance


    Original
    2SK2949 K294 2SK2949 PDF

    2SK2949

    Abstract: No abstract text available
    Text: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance


    Original
    2SK2949 2SK2949 PDF

    2SK2941

    Abstract: MP-25 transistor 2SK2941
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T his p ro d u c t is n -C h a n e l M O S Field E ffe c t T ra n s is to r d e s ig n e d high in m illim e te rs cu rre n t sw itch in g a p p lica tio n .


    OCR Scan
    2SK2941 2SK2941 MP-25 transistor 2SK2941 PDF

    transistor 2SK2941

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T his product is n-Chanel MOS Field Effect Transistor designed high current switching application. FEATURE • Low On-Resistance RDS on i = 14 m il Typ. (V g s = 10 V, Id =18 A)


    OCR Scan
    2SK2941 transistor 2SK2941 PDF

    TCA 150

    Abstract: 2SK295 2SK294 TCA150 kdsi
    Text: 2SK294.2SK295 y » j 3 > N ? -* * JU MOS F E T SILIC O N N -C H A N N EL MOS F E T * * ««* * ? y HIGH SPEED POWER SW ITCH IN G 1. Y — b ! Gate 2. K w -Í >• ! Drain 7 7 ^ iO (Flange 3. V — X ! Source (Dimensions in mm) (JE D E C T 0 -2 2 0 A B )


    OCR Scan
    T0-220AB) 2SK294 2KS295 Ta-25Â TCA 150 2SK295 TCA150 kdsi PDF

    2SK2949

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2949 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2949 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • Low Drain-Source ON Resistance


    OCR Scan
    2SK2949 2SK2949 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2949 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2949 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance


    OCR Scan
    2SK2949 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T his p ro d u c t is n -C h a n e l M O S F ield E ffe c t T ra n s is to r d e s ig n e d high in m illim e te rs c u rre n t s w itch in g a p p lica tio n .


    OCR Scan
    2SK2941 PDF

    2SK294

    Abstract: 2SK295
    Text: HITACHI/{OPTOELECTRONICS} 73 149620b HI TACHI"/ ÖPTOELECTRÜM ICS — D e J M4'ikiED5 DDDTTTE 7 3 C 09992 D 2SK294,2SK295 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES -• • Low O n-Resistance. High Speed Sw itching.


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    149620b 2SK294 2SK295 2SK294, 2SK295---------------------- 2SK295 PDF