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    2SK293 Search Results

    2SK293 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2939STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 35A 26Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK2938STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A 34Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK2938L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A 34Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK2931-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 45A 13Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK2937-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A 34Mohm To-220Fm Visit Renesas Electronics Corporation
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    2SK293 Price and Stock

    Rochester Electronics LLC 2SK2932-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2932-E Bulk 204
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    Rochester Electronics LLC 2SK2933-E

    2SK2933 - N-CHANNEL POWER MOSFET
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    DigiKey 2SK2933-E Bulk 184
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    Rochester Electronics LLC 2SK2935-91-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2935-91-E Bulk 87
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    Rochester Electronics LLC 2SK2935-92-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2935-92-E Bulk 87
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    Rochester Electronics LLC 2SK2934-92-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2934-92-E Bulk 132
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    Find more 2SK293 price and stock on Findchips.com

    2SK293 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK293 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK293 Unknown FET Data Book Scan PDF
    2SK2930 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2930 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2930 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2930-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2931 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2931 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2931 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2931-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2932 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2932 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2932 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2932-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2933 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2933 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2933 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2933-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2934 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2934 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK293 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G


    Original     		PDF 2SK2936 ADE-208-559B 220CFM D-85622 Hitachi DSA00276

    2SK2933

    Abstract: Hitachi DSA002780
    Text: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2933 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2933 ADE-208-556 2SK2933 Hitachi DSA002780

    Hitachi DSA002732

    Abstract: No abstract text available
    Text: 2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G


    Original     		PDF 2SK2932 ADE-208-555B 220CFM D-85622 Hitachi DSA002732

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2931 Silicon N Channel MOS FET High Speed Power Switching ADE-208-554 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2931 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2931 ADE-208-554 Hitachi DSA002780

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D


    Original     		PDF 2SK2936 ADE-208-559B 220CFM Tch005-1835 D-85622 Hitachi DSA002749

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2934 Silicon N Channel MOS FET High Speed Power Switching ADE-208-557 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2934 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2934 ADE-208-557 Hitachi DSA002780

    553c

    Abstract: 2SK2930 2SK2930-E PRSS0004AC-A
    Text: 2SK2930 Silicon N Channel MOS FET High Speed Power Switching REJ03G1044-0500 Previous: ADE-208-553C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2930 REJ03G1044-0500 ADE-208-553C) PRSS0004AC-A O-220AB) 553c 2SK2930 2SK2930-E PRSS0004AC-A

    2SK2937

    Abstract: 2SK2937-E PRSS0003AD-A
    Text: 2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 Previous: ADE-208-560C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2937 REJ03G1051-0500 ADE-208-560C) PRSS0003AD-A O-220FM) 2SK2937 2SK2937-E PRSS0003AD-A

    2SK2931

    Abstract: 2SK2931-E PRSS0004AC-A
    Text: 2SK2931 Silicon N Channel MOS FET High Speed Power Switching REJ03G1045-0500 Previous: ADE-208-554C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2931 REJ03G1045-0500 ADE-208-554C) PRSS0004AC-A O-220AB) 2SK2931 2SK2931-E PRSS0004AC-A

    2SK2936

    Abstract: Hitachi DSA00238
    Text: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2


    Original     		PDF 2SK2936 ADE-208-559B 220CFM 2SK2936 Hitachi DSA00238

    2SK2939

    Abstract: Hitachi DSA00238 PWC20
    Text: 2SK2939 L ,2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK2939 ADE-208-562D Hitachi DSA00238 PWC20

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2935 Silicon N Channel MOS FET High Speed Power Switching ADE-208-558 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2935 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2935 ADE-208-558 Hitachi DSA002780

    Hitachi DSA002758

    Abstract: No abstract text available
    Text: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2933 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2933 ADE-208-556 Hitachi DSA002758

    Hitachi DSA002758

    Abstract: No abstract text available
    Text: 2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2932 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2932 ADE-208-555 Hitachi DSA002758

    2SK2938

    Abstract: Hitachi DSA0044
    Text: 2SK2938 L ,2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-561B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK2938 ADE-208-561B Hitachi DSA0044

    2SK2939

    Abstract: Hitachi DSA00117
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition June 1, 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK2939 ADE-208-562D Aval005-1897 D-85622 Hitachi DSA00117

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C Z 4th. Edition Sep. 1997 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1


    Original     		PDF 2SK2930 ADE-208-553C 220AB 6287iPi582500 6287iPi582160 Hitachi DSA00280

    556B

    Abstract: 2SK2933 2SK2933-E PRSS0003AE-A
    Text: 2SK2933 Silicon N Channel MOS FET High Speed Power Switching REJ03G1047-0400 Previous: ADE-208-556B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A


    Original     		PDF 2SK2933 REJ03G1047-0400 ADE-208-556B) PRSS0003AE-A O-220C 556B 2SK2933 2SK2933-E PRSS0003AE-A

    2SK2936-E

    Abstract: RG 702 Diode 2SK2936 PRSS0003AE-A
    Text: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching REJ03G1050-0400 Previous: ADE-208-559B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2936 REJ03G1050-0400 ADE-208-559B) PRSS0003AE-A O-220C 2SK2936-E RG 702 Diode 2SK2936 PRSS0003AE-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK2934 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-557B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds =0.026 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2934


    OCR Scan     		PDF 2SK2934 ADE-208-557B D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SK2937 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-560 Target Specification 1st. Edition Features • Low on-resistarice R ds = 0.026 Q t:yp. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO -220FM


    OCR Scan     		PDF 2SK2937 ADE-208-560 -220FM

    K2936

    Abstract: No abstract text available
    Text: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-559 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.010 i2 typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1226


    OCR Scan     		PDF 2SK2936 ADE-208-559 10fis, K2936

    Untitled

    Abstract: No abstract text available
    Text: 2SK2932 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-555 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.055 Q typ. • H igh speed sw itching • 4V gate drive device can be driven from 5V source Outline 1210


    OCR Scan     		PDF 2SK2932 ADE-208-555

    Untitled

    Abstract: No abstract text available
    Text: 2SK2939 L , 2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-562 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.020 Q typ. • High speed switching • 4V gate drive device can be driven from 5V source


    OCR Scan     		PDF 2SK2939 ADE-208-562