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    2SK1302 Search Results

    2SK1302 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1302 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1302 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1302 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1302 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1302 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1302 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1302 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1302 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1302 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1302 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1302 Unknown FET Data Book Scan PDF
    2SK1302-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK1302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1302

    Abstract: V1660 Hitachi DSA00398
    Text: 2SK1302 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 O-220AB 2SK1302 V1660 Hitachi DSA00398

    2SK1302

    Abstract: Hitachi DSA002713
    Text: 2SK1302 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 O-220AB 2SK1302 Hitachi DSA002713

    2SK1302

    Abstract: Hitachi DSA002780
    Text: 2SK1302 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 O-220AB D-85622 2SK1302 Hitachi DSA002780

    Untitled

    Abstract: No abstract text available
    Text: 2SK1302 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 220AB

    V1660

    Abstract: 2SK1302
    Text: 2SK1302 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 220AB V1660 2SK1302

    2SK1302

    Abstract: DSA003638
    Text: 2SK1302 Silicon N-Channel MOS FET ADE-208-1260 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 ADE-208-1260 O-220AB 2SK1302 DSA003638

    V1660

    Abstract: 2SK1302 2SK1302-E PRSS0004AC-A
    Text: 2SK1302 Silicon N Channel MOS FET REJ03G0921-0200 Previous: ADE-208-1260 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1302 REJ03G0921-0200 ADE-208-1260) PRSS0004AC-A O-220AB) V1660 2SK1302 2SK1302-E PRSS0004AC-A

    2SK1307

    Abstract: 2SK1302
    Text: 2SK1307 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1307 220FM 2SK1307 2SK1302

    ADE-208-1205

    Abstract: Hitachi motor driver SP-10 2SK1302 2SK1307 4AK21 DSA003638
    Text: 4AK21 Silicon N-Channel Power MOS FET Array ADE-208-1205 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive


    Original
    PDF 4AK21 ADE-208-1205 2SK1302, 2SK1307 SP-10 ADE-208-1205 Hitachi motor driver SP-10 2SK1302 2SK1307 4AK21 DSA003638

    2SK1302

    Abstract: 2SK1623 Hitachi DSA00347
    Text: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1623 2SK1302 Hitachi DSA00347

    Hitachi DSA002787

    Abstract: No abstract text available
    Text: 4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS on ≤ 0.09 Ω, VGS = 10 V, ID = 4 A RDS(on) ≤ 0.12 Ω, VGS = 4 V, ID = 4 A • • • • • • Capable of 4 V gate drive Low drive current


    Original
    PDF 4AK21 2SK1302, 2SK1307 Hitachi DSA002787

    K1302

    Abstract: No abstract text available
    Text: 2SK1302 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    PDF 2SK1302 K1302

    2SK1778

    Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
    Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247


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    PDF 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302

    Untitled

    Abstract: No abstract text available
    Text: l- V i jj M * f ll # /t 7 - M 0 S FETX'T y ^ POWER MOS FET SWITCHES WITH I-V CONVERTER “D# Part No. CDS2 * -j □ v y ^ B ftN c h /'C 7 -M O S FET 2SK1302*gM3 £2iSlF*3j& S I L UT U ju n k s c : ( ¿ m M H s n t t * t ' fiffl i t 7 i t - M J-T ? J H 001M ? ^ J i i ± ( - 4 ( r c ~ + 8 5 l C ) 0 > * t i * i J £ n r i ! i


    OCR Scan
    PDF 2SK1302 575max) 197max)

    Untitled

    Abstract: No abstract text available
    Text: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    PDF 2SK1623

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan
    PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    2SK1326

    Abstract: 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311 2SK1301
    Text: - 96 - € tt ffl £ j£ m "Æ i f m 1 m \> m, P d/P c h m K fe V* V) * ft * (V) * (A) * (w> Ig s s (max) (A) Vg s (V) % W (Ta=25°C) tï ft (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) gm (min) (typ) V d s (S) (S) (V) Id (A) Id (A) 2SK1301


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    PDF 2SK1301 2SK1302 2SK1303 2SK1304 2SK1305 DSS323S 75nstyp 267/S: 2SK1324, 1324S 2SK1326 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan
    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


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    PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan
    PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972