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    2SD991 Price and Stock

    Rochester Electronics LLC 2SD991K

    POWER BIPOLAR TRANSISTOR
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    DigiKey 2SD991K Bulk 76
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    Renesas Electronics Corporation 2SD991K

    2SD991K
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    Verical 2SD991K 247 81
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    Rochester Electronics 2SD991K 247 1
    • 1 $3.82
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    2SD991 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD991 Hitachi Semiconductor Silicon NPN Triple Diffused Transistor Original PDF
    2SD991 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD991 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD991 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD991K Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SD991K Hitachi Semiconductor Silicon NPN Triple Diffused, High Voltage Switching, Igniter Scan PDF
    2SD991K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD991K Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD991K Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SD991 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: 2SD991 K Silicon NPN Triple Diffused Application High voltage switching, igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 3000 Ω 150 Ω (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


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    PDF 2SD991 O-220AB D-85622 Hitachi DSA00164

    2SD945

    Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350


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    PDF 2SD901 2SD902 2SD903 2SD904 2SD905 2SD906 2SD907 2SD908 2SD909 2SD910 2SD945 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SD1114

    Abstract: 2SD991
    Text: 2SD1114 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 400 V ————————————————————–


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    PDF 2SD1114 O-220AB 2SD991

    Untitled

    Abstract: No abstract text available
    Text: 2SD991 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline T O -2 2 0 A B 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage ^C B O 300 V Collector to em itter voltage VCE0 300


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    PDF 2SD991 2SD991Ã

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SD991 K SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING. ¡GNITER L Base O - ilo c io r SÎ lauge5 ' f'miuer ll ¡ínc»>sr‘' ist« i JE D E C TO-220AB) I A BSO LU T E MAXIMUM RATINGS (T a - 2 5 X ) Collector to base voltage Í SvmboJ • L.:. «


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    PDF 2SD991 O-220AB) 100mA. 2SD99I.

    2SD991

    Abstract: No abstract text available
    Text: 2SD991 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 2 l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 I T — 'WV— ^— 'WV—14-3000 Q 150 Q (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C)


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    PDF 2SD991 -220A D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SD991 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB 2 II J I j 12 , 1 Base 2 Collector (Flange) 3 Emitter -K^-M -Î t . r t1 I I 1 _ J i—wv—A—vv\—+-1 3000 Q 1 50 Í2 (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SD991 -220AB

    2SD977

    Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
    Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K


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    PDF 2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162

    2SD921

    Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
    Text: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H


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    PDF 2SD917 2SD920 2SD921 2SD922 2SD923 2SD929 2SD933H 2SD946 2SB789 2SD968 2SD920 T03B 2SD983 2SB793 2SD947 2SD917 2SD922 2SD923

    Untitled

    Abstract: No abstract text available
    Text: 2SD1114 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage


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    PDF 2SD1114 -220AB

    2SC4748

    Abstract: 2SC5306 K20-K k08 transistor
    Text: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136


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    PDF 2SD864® 2SD970® 2SD991® 2SD1085® 2SD1114« 2S01115® 2SD1126® k-20k 2SD1127® 2SD1248® 2SC4748 2SC5306 K20-K k08 transistor

    NEC 824A

    Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
    Text: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330


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    PDF 2SD792 2SD793 2SD794 2SD795 2SD795A 2SD796 2SD798 2SD799 2SD800 2SD801 NEC 824A NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    2Sc1625

    Abstract: 2S0880 2SD845 2SD1148 2SD2023 2SD880 2SC3692 2SC1881 2SC3144 2SD1275A
    Text: - 224 - % 836 S 836A 8368 837 ^ 2SD 837A 2SD 839 « * s ± a « fé e fé fé fé ~ m Manuf. O 2SD 2SD 2SD 2SD tt oo Type No. 2SD 835 + * MI m T T T 2SC3144 T T # 2SD1190 2SC3145 2SC3038 2SD 844 2SD 845 J * « 2SD1063 2SD 846 * 2E * ± W * 0 as % 0 <m 2SD


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    PDF 2SD835 2SD836 2SD799 2SD991 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1646 2Sc1625 2S0880 2SD845 2SD1148 2SD2023 2SD880 2SC3692 2SC1881 2SC3144

    Untitled

    Abstract: No abstract text available
    Text: 2SD1114 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 300 £2 (Typ) 1 50 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Rating


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    PDF 2SD1114 -220A D-85622

    2SD991

    Abstract: No abstract text available
    Text: HITACHI 2S D 991 -S IL IC O N N P N T R IP L E D IF F U S E D H IG H V O L T A G E S W IT C H IN G , IG N IT E R J E D E C T O -2 2 0 A B • A B S O L U T E M A X IM U M R A T IN G S (Ta=25°C) Symbol Hem M A X IM U M C O L L E C T O R D IS S IP A T IO N


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    PDF 2SD991 O-220AB) 2SD991Â 100mA,