Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A
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2SD2137,
2SD2137A
2SD2137
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2SD2137A
Abstract: 2SB1417 2SB1417A 2SD2137
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A
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2SD2137,
2SD2137A
2SB1417
2SB1417A
2SD2137
2SD2137A
2SB1417A
2SD2137
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2sd2137
Abstract: No abstract text available
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current
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2SD2137,
2SD2137A
2SD2137
2sd2137
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping
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O-220
2SD2137A
10MHz
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)
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2002/95/EC)
2SD2137A
2SB1417A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)
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2002/95/EC)
2SD2137A
2SB1417A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1417A
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V Collector current
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2SD2137A
2SB1417A
2SB1417A
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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2002/95/EC)
2SD2137A
2SB1417A
2SD2137A
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2SB1417
Abstract: 2SB1417A 2SD2137 2SD2137A
Text: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1417 base voltage 2SB1417A Collector to
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2SB1417,
2SB1417A
2SD2137
2SD2137A
2SB1417
2SB1417
2SB1417A
2SD2137A
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2SD2137
Abstract: 2SB1417 2SB1417A 2SD2137A
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A
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2SD2137,
2SD2137A
2SD2137
2SD2137
2SB1417
2SB1417A
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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2002/95/EC)
2SD2137A
2SB1417A
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1417A
2SD2137A
2SB1417A
2SD2137A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SD2137A
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2SD2137
Abstract: 2SB1417 2SB1417A 2SD2137A
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A
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2SD2137,
2SD2137A
2SD2137
2SD2137
2SB1417
2SB1417A
2SD2137A
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2SD2137A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1417A
2SD2137A
2SD2137A
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2SB1417
Abstract: 2SB1417A 2SD2137 2SD2137A
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 5.0±0.1 • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 2SD2137A 2SD2137A Emitter to base voltage
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2SD2137,
2SD2137A
2SD2137
2SB1417
2SB1417A
2SD2137
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1417A
2SD2137A
2SB1417A
2SD2137A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE sat
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2SD2137,
2SD2137A
2SB1417
2SB1417A
2SD2137
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2SB1417A
Abstract: 2SD2137A
Text: Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open)
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2SB1417A
2SD2137A
2SB1417A
2SD2137A
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SD2137
Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
Text: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)
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2SD2137,
2SD2137A
2SB1417,
2SB1417A
2SD2137
2SD2137
pc 817
2SB1417
2SB1417A
2SD2137A
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2SD2137
Abstract: 2SD2137A 2SB1417 2SB1417A S21N
Text: Power Transistors 2SD2137, 2SD2137A 2SD2137, 2SD2137A Silicon NPN Triple-Diffused Planar Type Pow er A m plifier C om plem entary Pair with 2SB1417, 2S B1417A • Features • H igh D C c u r re n t gain h PF and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcF.tao)
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2SD2137,
2SD2137A
2SB1417,
2SB1417A
2SD2137
2SD2137
2SD2137A
2SB1417
2SB1417A
S21N
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2SD2172
Abstract: 2SD2165 2SD2152 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138
Text: - 282 - W c k & fà l a = 2 b V , * m t l c = 2 h aC M 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138 2SD2138A 2SD2139 2SD2140 2SD2144S 2SD2145 2SD2145M 2SD2148 oc*noi »n 2SD2150 2SD2151 2SD2152 2SD2154 2SD2156 2SD2156A 2SD2157 2SD2157A 2SD2158
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2SD2133
2SD2134
2SD2135
2SD2136
2SD2137
2SD2137A
2SD2138
2SD2138A
2SD2156
T0-220Fa)
2SD2172
2SD2165
2SD2152
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