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    2SD1691 Search Results

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    2SD1691-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
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    Rochester Electronics LLC 2SD1691-AZ

    POWER BIPOLAR TRANSISTOR NPN
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    Micro Commercial Components 2SD1691-Y-BP

    TRANS NPN 60V 5A TO126
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    TRANS NPN 60V 5A TO126
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    TRANS NPN 60V 5A TO126
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    Renesas Electronics Corporation 2SD1691-AZ

    Trans GP BJT NPN 60V 5A 3-Pin TO-126
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    Verical 2SD1691-AZ 7,600 569
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    Rochester Electronics 2SD1691-AZ 8,720 1
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    2SD1691 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1691 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1691 NEC Semiconductor Selection Guide Original PDF
    2SD1691 Unisonic Technologies LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT Original PDF
    2SD1691 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1691 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1691 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1691 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2sd1691 NEC NPN power transistor, 60V, 5 ampere Scan PDF
    2SD1691 NEC NPN SILICON POWER TRANSISTOR Scan PDF
    2SD1691-G-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1691L NEC NPN Silicon Power Transistor Scan PDF
    2SD1691-O-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1691-Y-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF

    2SD1691 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original     		PDF 2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015

    Solenoid Driver 2a

    Abstract: 2SB1151 2SD1691
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION •High Collector Current -IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.3V(Max.)@ IC= -2A ·Complement to Type 2SD1691 APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid


    Original     		PDF 2SB1151 2SD1691 Solenoid Driver 2a 2SB1151 2SD1691

    2SD1691

    Abstract: 2SB1151
    Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A


    Original     		PDF 2SD1691 O-126 2SB1151 2SD1691 2SB1151

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original     		PDF 2SD1691 2SB1151 O-126C QW-R217-003

    2SD1691

    Abstract: 2SB1151
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original     		PDF 2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 2SB1151

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 2SD1691T O-126

    2SB1151

    Abstract: 2SD1691
    Text: Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA


    Original     		PDF 2SB1151 O-126 2SD1691 VCC10V 2SB1151 2SD1691

    2SB1151 y

    Abstract: 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 *Pb-free plating product number: 2SB1151L „ ORDERING INFORMATION Ordering Number Normal


    Original     		PDF 2SB1151 2SD1691 2SB1151L 2SB1151-T60-K 2SB1151L-T60-K 2SB1151-TN3-R 2SB1151L-TN3-R 2SB1151-TN3-T 2SB1151L-TN3-T O-126 2SB1151 y 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ

    2SD1691

    Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION


    Original     		PDF 2SD1691 O-220 2SB1151 O-126 O-126C 2SD1691L 2SD1691-x-T60-K 2SD1691L-x-T60-K 2SD1691-x-T6C-K 2SD1691L-x-T6C-K 2SD1691 transistor 2sd1691 2SB1151 2SD1691L 2SD*1691

    2SB1151

    Abstract: 2SD1691
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original     		PDF 2SD1691 2SB1151 O-126C PW10ms Cycle50% QW-R217-003 2SB1151

    2SD1691

    Abstract: 2SD*1691 2SB1151 2sb115
    Text: SavantIC Semiconductor Product Specification 2SD1691 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS


    Original     		PDF 2SD1691 O-126 2SB1151 2SD1691 2SD*1691 2SB1151 2sb115

    2SD1691

    Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating


    Original     		PDF 2SD1691 O-220 2SB1151 O-220F1 O-126 O-126C 2SD1691L-x-T60-K 2SD1691G-x-T60-K 2SD1691L-x-T6C-K 2SD1691G-x-T6C-K 2SD1691 2SD1691L 2SB1151 TO-220F1 NPN

    2SB1151 y

    Abstract: 2SB1151-L(AZ)
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R


    Original     		PDF 2SB1151 2SD1691 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 2SB1151 y 2SB1151-L(AZ)

    2SB1151

    Abstract: 2SD1691
    Text: JMnic Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA


    Original     		PDF 2SB1151 O-126 2SD1691 VCC10V 2SB1151 2SD1691

    2SB1151

    Abstract: 2SD1691 2SB1151 y XT60 2sb15
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-T 2SB1151G-x-AA3-T


    Original     		PDF 2SB1151 2SD1691 2SB1151L-x-AA3-T 2SB1151G-x-AA3-T 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 2SB1151 2SD1691 2SB1151 y XT60 2sb15

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 2SD1691T O-126

    2SB1151

    Abstract: 2SD1691
    Text: SavantIC Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA


    Original     		PDF 2SB1151 O-126 2SD1691 VCCA10V 2SB1151 2SD1691

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  FEATURES *High Power Dissipation *Complementary to 2SD1691  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151G-x-AA3-R 2SB1151L-x-T60-K


    Original     		PDF 2SB1151 2SD1691 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 O-252

    2SB1151

    Abstract: 2SD1691 D16190EJ1V1DS00
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)


    Original     		PDF 2SD1691 O-126 2SB1151 2SB1151 2SD1691 D16190EJ1V1DS00

    2SD1691

    Abstract: No abstract text available
    Text: ST 2SD1691 NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. FEATURES: •Large current capacity and low VCE sat :


    Original     		PDF 2SD1691 O-126 PW350 2SD1691

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220  FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1  ORDERING INFORMATION Ordering Number Lead Free Plating


    Original     		PDF 2SD1691 O-220F1 O-220 2SB1151 O-126 O-126C 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x-TF1-T 2SD1691G-x-TF1-T

    2SD1691L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-252 TO-251 1 1 TO-126  ORDERING INFORMATION Ordering Number


    Original     		PDF 2SD1691 O-220F1 O-220 2SB1151 O-252 O-251 O-126 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x-TF1-T 2SD1691L

    IH02

    Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
    Text: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,


    OCR Scan     		PDF 2SD1691 2SB1151 QK0276 Ffflsi0266 IH02 ts 4141 TRANSISTOR 2SB1151 2SD1691 T460

    2SB1151

    Abstract: 2SD1691
    Text: NPN SILICON POWER TRANSISTOR 2 S D 1691 DESCRIPTION The 2SD1691 is a Low V C E s a t transistor which has a large current PACKAGE DIMENSIONS capability and wide SOA. in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor.


    OCR Scan     		PDF 2SD1691 2SD1691 2SB1151. 2SB1151