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Toshiba America Electronic Components 2SC5692(TE85L,F) Trans GP BJT NPN 50V 2.5A 625mW 3-Pin TSM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC5692(TE85L,F)		9,000		472	1 - 10 - 100 - 1000 $0.1549 10000 $0.1463	Buy Now
	2SC5692(TE85L,F)		2,125		211	1 - 10 - 100 - 1000 $0.1241 10000 $0.1241	Buy Now
Quest Components	2SC5692(TE85L,F)		7,200			1 $0.93 10 $0.93 100 $0.93 1000 $0.93 10000 $0.1628	Buy Now
Chip1Stop	2SC5692(TE85L,F)	Cut Tape	2,145			1 - 10 $0.169 100 $0.117 1000 $0.0973 10000 $0.0973	Buy Now
Toshiba America Electronic Components 2SC5692(TE85LF Trans GP BJT NPN 50V 2.5A 3-Pin TSM (Alt: 2SC5692(TE85L,F))
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Avnet Asia	2SC5692(TE85LF			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SC5692 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5692		Toshiba	Transistor		Original	PDF
2SC5692		Toshiba	NPN Transistor		Original	PDF

2SC5692 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC5692 Abstract: 23S1C Text: 2SC5692 東芝トランジスタシリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。	Original	PDF	2SC5692 2SC5692 23S1C
Untitled Abstract: No abstract text available Text: 2SC5692 東芝トランジスタシリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。	Original	PDF	2SC5692
Untitled Abstract: No abstract text available Text: Reliability Tests Report Product Name: 2SC5692 Package Name: TSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s	Original	PDF	2SC5692
2SC5692 Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692 2SC5692
Untitled Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692
Untitled Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692
2SC5692 Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692 2SC5692
2sc5692 Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692 2sc5692
2SC5692 Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692 2SC5692
Untitled Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692
Untitled Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692
Untitled Abstract: No abstract text available Text: 2SC5692 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)	Original	PDF	2SC5692
circuit diagram of luminous inverter Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances	Original	PDF	BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	PDF	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
tb6584 Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers	Original	PDF	TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	PDF	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	PDF	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
TPC6801 Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738 Text: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh	Original	PDF
64Mb-SRAM Abstract: TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年10月号 1 各種携帯情報端末の小型・薄型化を実現 8Mb SRAM/32Mb擬似SRAM搭載MCP TH50WSP3580AASBTH50WSP3581AASB SRAM応用技術担当 045-890-2708 携帯電話をはじめとする携帯機器、情報	Original	PDF	SRAM/32MbSRAMMCP TH50WSP3580AASB TH50WSP3581AASB SRAM045-890-2708 SRAM32 175m32 SRAM/32MbSRAM 64Mb-SRAM TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	PDF	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

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2SC5692 Search Results

2SC5692 Price and Stock

Toshiba America Electronic Components 2SC5692(TE85L,F)

Toshiba America Electronic Components 2SC5692(TE85LF

2SC5692 Datasheets (2)

2SC5692 Datasheets Context Search

2SC5692

Untitled

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2SC5692

Untitled

Untitled

2SC5692

2sc5692

2SC5692

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circuit diagram of luminous inverter

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

tb6584

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

TPC6801

64Mb-SRAM

2sC5200, 2SA1943