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    Rochester Electronics LLC 2SC5501A-4-TR-E

    2SC5501A - RF TRANSISTOR, 10V, 7
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    DigiKey 2SC5501A-4-TR-E Bulk 2,420
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    onsemi 2SC5501A-4-TR-E

    RF TRANS NPN 10V 7GHZ 4MCP
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    Verical 2SC5501A-4-TR-E 78,377 2,962
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    Rochester Electronics 2SC5501A-4-TR-E 78,377 1
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    2SC5501 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5501 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC5501 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5501 Sanyo Semiconductor VHF to UHF Low-Noise Wide-Band Amplifier Applications Scan PDF
    2SC5501 Sanyo Semiconductor VERY HIGH-FREQUENCY TRANSISTOR SERIES Scan PDF
    2SC5501 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    2SC5501A-4-TR-E On Semiconductor 2SC5501A - NPN Bipolar Transistor for VHF to UHF Wide-Band Low Noise Amplifier Applications Original PDF
    2SC5501A-4-TR-E ON Semiconductor RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO VHF-UHF MCP4 Original PDF

    2SC5501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor zo 607

    Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF 2SC5501A ENA1061 S21e2 500mW A1061-5/5 transistor zo 607 MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF 2SC5501A ENA1061 500mW A1061-5/5

    N6221

    Abstract: 2SC5501 62212 6221-1 62211 TA-1710
    Text: 注文コード No. N 6 2 2 1 2SC5501 No. N6221 50699 新 2SC5501 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=13dB typ(f=1GHz)。


    Original     		PDF 2SC5501 N6221 S21e2 500mW 250mm2 N6221 2SC5501 62212 6221-1 62211 TA-1710

    ac 0624 transistor 17-33

    Abstract: 6221 ic 2SC5501
    Text: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN6221 2SC5501 S21e2 500mW 2SC5501] ac 0624 transistor 17-33 6221 ic 2SC5501

    2SC5501A

    Abstract: A1061 A1061-3 *5501a A10612
    Text: 2SC5501A 注文コード No. N A 1 0 6 1 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5501A VHF ~ UHF 広帯域低雑音増幅用 特長 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=13dB typ(f=1GHz)。


    Original     		PDF 2SC5501A S21e2 500mW 250mm2 2SC5501A 60408AB A1061-5/5 A1061 A1061-3 *5501a A10612

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF ENA1061 2SC5501A S21e2 500mW 250mm20 A1061-5/5

    ac 0624 transistor 17-33

    Abstract: 2SC5501 TA-1710
    Text: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5501] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector


    Original     		PDF ENN6221 2SC5501 2SC5501] S21e2 500mW ac 0624 transistor 17-33 2SC5501 TA-1710

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1061A 2SC5501A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Large allowable collector dissipation : PC=500mW max


    Original     		PDF ENA1061A 2SC5501A 500mW 250mm2Ã A1061-8/8

    SC-82AB sot-343

    Abstract: ic not 4069 2SC5501A SC82AB sot-343
    Text: 2SC5501A Ordering number : ENA1061A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz)


    Original     		PDF ENA1061A 2SC5501A S21e2 500mW 250mm2 A1061-8/8 SC-82AB sot-343 ic not 4069 2SC5501A SC82AB sot-343

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz)


    Original     		PDF 2SC5501A ENA1061A 500mW A1061-8/8

    RD1004

    Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
    Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）


    Original     		PDF CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006

    RD2004

    Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
    Text: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に


    Original     		PDF 3LN02M LV2282VA EC2C01C SVC710 SVC707 ECSP1008-2 P124A RD2004 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply

    inverter in 12v DC to 220v AC 400w circuit diagrams

    Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
    Text: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)


    Original     		PDF EP124A inverter in 12v DC to 220v AC 400w circuit diagrams step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		PDF MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103

    transistor 2SC5066

    Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
    Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U


    Original     		PDF THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450

    transistor zo 607

    Abstract: ZO 607 MA marking 1821 zo 607 IS12I D7L marking l812 2SC5501 ZS12 ZS21
    Text: O rdering number:ENN6221 NPN Epitaxial Planar Silicon Transistor _ 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions •Low noise : NF=1.0dB typ f= lG H z . •High gain : | S21e 12= 13dB typ (f= 1GHz).


    OCR Scan     		PDF ENN6221 2SC5501 500mW 2SC5501] IS12I transistor zo 607 ZO 607 MA marking 1821 zo 607 D7L marking l812 2SC5501 ZS12 ZS21

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266