2SC5305 Search Results

2SC5305 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5305		Sanyo Semiconductor	Switching Transistors		Original	PDF
2SC5305		Unisonic Technologies	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR		Original	PDF
2SC5305		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF
2SC5305LS		Sanyo Semiconductor	NPN Triple Diffused Planar Silicon Transistor		Original	PDF
2SC5305LS		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

2SC5305 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NPN Transistor 600V Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)	Original	2SC5305 NPN Transistor 600V NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A	PDF
TA1239 Abstract: 2SC5305 2SC5305LS CP12A TA-1239 Text: Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.	Original	ENN5884A 2SC5305LS 2079D 2SC5305] O-220FI TA1239 2SC5305 2SC5305LS CP12A TA-1239	PDF
TA-1239 Abstract: VCBO-1200V EN5884 2SC5305 TA1239 Text: Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm	Original	EN5884 2SC5305 2079B 2SC5305] O-220FI TA-1239 VCBO-1200V EN5884 2SC5305 TA1239	PDF
300V transistor npn 2a Abstract: 2SC5305 2SC5305L Text: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications	Original	2SC5305 O-220 2SC5305L QW-R203-028 300V transistor npn 2a 2SC5305 2SC5305L	PDF
2sc5305 Abstract: 2SC5305L Text: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications	Original	2SC5305 O-220F 2SC5305L QW-R219-003 2sc5305 2SC5305L	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF