a1940
Abstract: Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197
Text: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings Tc = 25°C Characteristics
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2SA1940
2SC5197
a1940
Toshiba transistor A1940
toshiba a1940
2SA1940
2SC5197
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2Sc5197
Abstract: Collector 5v npn TRANSISTOR hfe1 Audio Output Transistor Amplifier audio NPN npn power amplifier circuit transistor Ic 1A datasheet NPN 2SA1940 2SA194 2SC51
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications
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2SC5197
2SA1940
2Sc5197
Collector 5v npn TRANSISTOR
hfe1
Audio Output Transistor Amplifier
audio NPN
npn power amplifier circuit
transistor Ic 1A datasheet NPN
2SA1940
2SA194
2SC51
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c5197
Abstract: c5197 equivalent 2Sc5197 toshiba c5197 2SA1940
Text: 2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics
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2SC5197
2SA1940
c5197
c5197 equivalent
2Sc5197
toshiba c5197
2SA1940
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2SA1940
Abstract: 2SC5197 2SA1940 equivalent
Text: SavantIC Semiconductor Product Specification 2SA1940 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage
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2SA1940
2SC5197
-120V;
2SA1940
2SC5197
2SA1940 equivalent
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2SA1940
Abstract: 2SC5197
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications
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2SA1940
2SC5197
-120V
2SA1940
2SC5197
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2SC5197
Abstract: Audio Output Transistor Amplifier 2SA1940
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications
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2SA1940
2SC5197
-50mA
-120V
2SC5197
Audio Output Transistor Amplifier
2SA1940
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c5197
Abstract: 2Sc5197 c5197 equivalent 2SA1940
Text: 2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics
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2SC5197
2SA1940
c5197
2Sc5197
c5197 equivalent
2SA1940
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Toshiba transistor A1940
Abstract: toshiba a1940 a1940
Text: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings Tc = 25°C Characteristics
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2SA1940
2SC5197
2-16C1A
Toshiba transistor A1940
toshiba a1940
a1940
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a1940
Abstract: Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197
Text: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings Tc = 25°C Characteristics
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2SA1940
2SC5197
2-16C1A
a1940
Toshiba transistor A1940
toshiba a1940
2SA1940
2SC5197
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2SC4793 2sa1837
Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688
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2SC1627A
2SA817A
2SC2235
2SA965
2SC3665
2SA1425
2SC5174
2SA1932
2SC3423
2SA1360
2SC4793 2sa1837
100 amp npn darlington power transistors
2sC5200, 2SA1943
10 amp npn darlington power transistors
2sC5200, 2SA1943, 2sc5198
2SC4684 datasheets
2sa1930 transistor equivalent
2sc5200
2SB906-Y
2sc3303
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2SA1940
Abstract: 2SC5197
Text: JMnic Product Specification 2SA1940 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5197 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage
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2SA1940
2SC5197
-120V;
2SA1940
2SC5197
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2SC5197
Abstract: 2SA1940
Text: SavantIC Semiconductor Product Specification 2SC5197 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage
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2SC5197
2SA1940
2SC5197
2SA1940
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C5197
Abstract: No abstract text available
Text: 2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics
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2SC5197
2SA1940
2-16C1A
C5197
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toshiba audio power amplifier
Abstract: 2SA1940 2SC5197
Text: 2SA1940 TO SH IBA 2 S A 1 940 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
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2SA1940
2SC5197
2-16C1A
VCB----120V,
toshiba audio power amplifier
2SA1940
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Untitled
Abstract: No abstract text available
Text: 2SA1940 T O SH IB A 2 S A 1 940 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X ^ . • • 03.2 ± 0 .2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage.
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2SA1940
2SC5197
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2SA1940
Abstract: 2SC5197
Text: 2SA1940 TO SH IBA 2 S A 1 940 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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2SA1940
2SC5197
2-16C1A
VCB----120V,
2SA1940
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2sa1940
Abstract: 2SC5197
Text: 2SC5197 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 97 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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2SC5197
2SA1940
2-16C1A
--120V,
2SC5197
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Untitled
Abstract: No abstract text available
Text: 2SA1940 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Q a h Unit in mm POWER AMPLIFIER APPLICATIONS 15.9 MAX. 03.2 ± 0.2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier É0 O n fc rm t S fa c rp MAXIMUM RATINGS Ta = 25°C
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2SA1940
2SC5197
2-16C1A
-120V
--50mA
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Untitled
Abstract: No abstract text available
Text: SILICON P N P T R IP LE DIFFUSED T Y P E _ 2 S A 1 PO W ER AMPLIFIER APPLICATIONS. 9 4 l U n it in m m • Complementary to 2SC5197 • Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC
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2SC5197
--120V,
--50mA,
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2SA1940
Abstract: 2SC5197
Text: 2SA1940 TO SHIBA 2 S A 1 940 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % M A X IM U M RATINGS Ta = 25°C
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2SA1940
2SC5197
2-16C1A
-120V
2SA1940
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2SA1940
Abstract: 2SC5197
Text: AOK AOK Semiconductor Product Specification 2SA1940 S ilicon PNP Power Transistors DESCRIPTION • With TO-3P l package • Complement to type 2SC5197 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage
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2SA1940
2SC5197
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Untitled
Abstract: No abstract text available
Text: 2SC5197 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. U n it 15.9MAX. • • in mm 03 2 1 0 2 Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC
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2SC5197
2SA1940
2-16C1A
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2SA1940
Abstract: 2SC5197
Text: 2SC5197 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 97 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
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2SC5197
2SA1940
2-16C1A
--120V,
2SC5197
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5197 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 97 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • Complementary to 2SA1940 • Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2
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2SC5197
2SA1940
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