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    2SC508 Search Results

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    2SC5080 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
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    Toshiba America Electronic Components 2SC5087R(TE85L,F)

    RF TRANS NPN 12V 8GHZ SMQ
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    Rochester Electronics LLC 2SC5080ZD-TL

    RF 0.05A, NPN
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    Toshiba America Electronic Components 2SC5087YTE85LF

    RF TRANS NPN 12V 7GHZ SMQ
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    Toshiba America Electronic Components 2SC5084-O(TE85L,F)

    RF TRANS NPN 12V 7GHZ SMINI
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    Toshiba America Electronic Components 2SC5088-O(TE85L,F)

    RF TRANS NPN 12V 7GHZ USQ
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    2SC508 Datasheets (159)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC508 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC508 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC508 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC508 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC508 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC508 Unknown Shortform Transistor Datasheet Guide Short Form PDF
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    2SC508 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC508 Unknown Basic Transistor and Cross Reference Specification Scan PDF
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    2SC508 Unknown Transistor Replacements Scan PDF
    2SC508 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC508 Unknown Cross Reference Datasheet Scan PDF
    2SC508 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5080 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC5080 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC5080 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC5080 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC5080 Renesas Technology Silicon NPN Epitaxial Original PDF
    ...

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    CBC 328

    Abstract: 2SC5086FT bf 478
    Text: 2SC5086FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5086F 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM


    Original
    PDF 2SC5086FT 2SC5086F CBC 328 bf 478

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5080 Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2SC5080 Hitachi DSA002756

    SL6 TRANSISTOR

    Abstract: Hitachi Transistor Hitachi DSA002746
    Text: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline CMPAK–4 4 3 1 2 1. Collector


    Original
    PDF 2SC5081 ICBO4005-1835 D-85622 SL6 TRANSISTOR Hitachi Transistor Hitachi DSA002746

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5081 Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2SC5081 Hitachi DSA002756

    2SC5086FT

    Abstract: No abstract text available
    Text: 2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SC5086FT 2SC5086FT

    2SC5087

    Abstract: APPLICATION for MIN 5758
    Text: 2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5087 2SC5087 APPLICATION for MIN 5758

    742 IC

    Abstract: 2SC5087 ic 742
    Text: 2SC5087 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5087 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目


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    PDF 2SC5087 -j150 -j100 -j250 742 IC 2SC5087 ic 742

    2SC5086FT

    Abstract: MA80240
    Text: 2SC5086FT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5086FT ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項


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    PDF 2SC5086FT 2SC5086FT MA80240

    Untitled

    Abstract: No abstract text available
    Text: 2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5085

    2SC5085

    Abstract: transistor C 2240
    Text: 2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5085 2SC5085 transistor C 2240

    Untitled

    Abstract: No abstract text available
    Text: 2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    PDF 2SC5088

    2SC5088

    Abstract: transistor A726
    Text: 2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5088 2SC5088 transistor A726

    ZO 607 MA

    Abstract: transistor zo 607 2SC5080 2SC5080ZD-TL-E AB5S
    Text: 2SC5080 Silicon NPN Epitaxial REJ03G0742-0300 Previous ADE-208-1132A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz


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    PDF 2SC5080 REJ03G0742-0300 ADE-208-1132A) PLSP0004ZA-A ZO 607 MA transistor zo 607 2SC5080 2SC5080ZD-TL-E AB5S

    Untitled

    Abstract: No abstract text available
    Text: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1


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    PDF 2SC5086

    2SC5086

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2—lld B f= 1GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SC5086 -j250 2SC5086

    2SC5086F

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5086F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F—l.ldB , |S2 1 e|2—He f—1GHz 1.6 ± 0.1 0.85 ± 0.1 ^8 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5086F 2SC5086F

    SL6 TRANSISTOR

    Abstract: hitachi power transistor
    Text: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 £ ! S a!l!tlQr £


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    PDF 2SC5081 SL6 TRANSISTOR hitachi power transistor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5086FT 7<;r ^nsfiFT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S21el2 = lldB f=lG H z 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5086FT S21el2

    2SC5084

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 lel 2—lld B Unit in mm + 0.5 f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SC5084 2SC5084

    2SC5087

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5087 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5087 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 13dB Unit in mm + 0.2 2 .9 -0 .3 -fr f=lGHz MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5087 Ty-j250 2SC5087

    2sc5084

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S2lel2—lldB f=lGHz + 0.5 2 . 5 - 0.3 + MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5084 SC-59truments, 2sc5084

    2SK2752

    Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
    Text: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867


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    PDF 2SC46 2SK1070 2SK1326 2SK1479 2SK2752* 2SK2752 3SK234 2SK431 3SK238 3SK229 3SK197 1535M 2SK190

    Untitled

    Abstract: No abstract text available
    Text: 2SC5081 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fx = 13.5 G H z T yp • H igh gain, low noise figure PG = 18 dB Typ, N F = 1.1 dB T yp at f = 900 M Hz Outline CMPAK-4 4 T 1. Collector


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    PDF 2SC5081 2SC5080.

    transistor z 0607

    Abstract: z 0607 ma Z 728
    Text: H ITACH I 2SC5080-Silicon NPN Epitaxial Transistor Application V H F & U H F w ide band am plifire MPAK-4 Features • H igh gain bandw idth product fx = 13.5 G H z typ • H igh gain, low noise figure PG = 18 dB typ, N F = 1.1 dB typ at f = 900 M H z


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    PDF 2SC5080------Silicon 2SC5080 transistor z 0607 z 0607 ma Z 728