2SA1297
Abstract: 2SC3267
Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)
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Abstract: No abstract text available
Text: 2SC3267GR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0
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2SC3267GR
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2SA1297
Abstract: 2SC3267
Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)
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2SA1297
2SC3267
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Abstract: No abstract text available
Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)
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Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)
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2SA1297
Abstract: 2SC3267
Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)
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2SA1297
2SC3267.
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2SA1297
Abstract: 2SC3267
Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)
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2SA1297
2SC3267.
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2SA1297
Abstract: 2SC3267
Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 低周波電力増幅用 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)
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2SA1297
2SC3267
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2SC3267
Abstract: 2SA1297
Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)
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2SC3267
2SA1297
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2SA1297
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Untitled
Abstract: No abstract text available
Text: 2SC3267 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0
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2SC3267
Freq120M
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2SA1297
Abstract: 2SC3267
Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)
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2SC3267
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Untitled
Abstract: No abstract text available
Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)
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2SC3267
2SA1297
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2SA1297
Abstract: 2SC3267
Text: 2SC3267 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3267 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1297 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)
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2SC3267
2SA1297
2SA1297
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2SA1297
Abstract: 2SC3267
Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)
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2SA1297
2SC3267.
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Untitled
Abstract: No abstract text available
Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.
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2SA1297
2SC3267.
961001EAA2'
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A1297
Abstract: 2SA1297 2SC3267
Text: 2SA1297 TO SH IBA 2 S A 1 297 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V q E (sat)“ —0.5V (Max.) @Iq = —2A Complementary to 2SC3267.
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2SA1297
2SC3267.
A1297
2SA1297
2SC3267
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2SA1297
Abstract: 2SC3267
Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297
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2SC3267
2SA1297
961001EAA2'
2SA1297
2SC3267
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2SA1297
Abstract: 2SC3267
Text: TO SH IBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat)“ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.4
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2SC3267
2SA1297
55MAX.
2SA1297
2SC3267
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1297 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1297) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V q e (sat)= —0.5V (Max.) @Iq = —2A • Complementary to 2SC3267.
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2SA1297)
2SC3267.
2SA1297
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4 .2 M A X. • • Low Saturation Voltage : V q e (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297
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2SC3267
2SA1297
961001EAA2'
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A1297
Abstract: 2SA1297 2SC3267 A-1297
Text: TOSHIBA 2SA1297 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V qE (sat)= —0-5V (Max.) @Iq = —2A Complementary to 2SC3267.
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2SA1297
A1297
2SC3267.
55MAX.
961001EAA2'
A1297
2SA1297
2SC3267
A-1297
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS Û.2MAX. • • Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX.
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2SC3267
2SA1297
55MAX.
961001EAA2'
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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2SC3216
Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Text: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265
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EPttTc-25
2SC3214
2SC3215
2SC3216
2SC3217-M
800MHz
2SC3218-M
2SC3225
2SC3233
2SC3216
2SC3214
2SA1295 2SC3264
2SC3217
2sc3246
2SC3264
2SC3215
2SA1285
2SC3251
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