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    2SC2529 Search Results

    2SC2529 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2529 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2529 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2529 Unknown Cross Reference Datasheet Scan PDF
    2SC2529 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2529 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2529 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2529 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC2529 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2529

    Abstract: 2SA1079
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 APPLICATIONS


    Original
    PDF 2SA1079 -160V 2SC2529 -160V; 10MHz 2SC2529 2SA1079

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1079 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-160V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation


    Original
    PDF 2SA1079 -160V 2SC2529 O-220C 10MHz

    2sa1046

    Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350


    Original
    PDF 2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006 2SA1006A 2SA1006B 2SA1007 2SA1096 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375

    TEA 1091

    Abstract: 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan
    PDF 2SC2564 2SC2565 100Hz, TEA 1091 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711