2SB1566
Abstract: 2SD2395
Text: SavantIC Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2395
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2SB1566
O-220F
2SD2395
O-220F)
current-p50
2SB1566
2SD2395
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2SB1566
Abstract: 2SD2395
Text: JMnic Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395 PINNING PIN
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2SB1566
O-220F
2SD2395
O-220F)
2SB1566
2SD2395
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2SB1566
Abstract: 2SD2395 TO220FN
Text: 2SB1566 Transistors For Power Amplification −60V, −3A 2SB1566 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Wide SOA. 12.0 10.0 0.8
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2SB1566
O-220FN
2SD2395
2SB1566
2SD2395
TO220FN
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2SD2395
Abstract: 2SB1566
Text: SavantIC Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector
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2SD2395
O-220F
2SB1566
O-220F)
30MHz
2SD2395
2SB1566
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2SD2395
Abstract: 2SB1566
Text: Inchange Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector
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2SD2395
O-220F
2SB1566
O-220F)
30MHz
2SD2395
2SB1566
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2sB1566 transistor
Abstract: 2SB1566 2SD2395
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1566 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation
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2SB1566
2SD2395
2sB1566 transistor
2SB1566
2SD2395
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2SB1566
Abstract: 2SB156 2SD2395 2sb15
Text: Inchange Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395
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2SB1566
O-220F
2SD2395
O-220F)
2SB1566
2SB156
2SD2395
2sb15
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Untitled
Abstract: No abstract text available
Text: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1566 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- X : V(BR)CEo= -50V(Min) • Low Collector Saturation Voltage: VCE(Sa,)= -1.0V(Max)@ (lc= -2A, IB= -0.2A)
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2SB1566
2SD2395
O-220F8
-50uA;
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2SD2395
Abstract: 2SB1566 B350
Text: Transistors 2SB1566 2SD2395 94L-459-B350 (94L-1101-D350) 296
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2SB1566
2SD2395
94L-459-B350)
94L-1101-D350)
2SD2395
2SB1566
B350
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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PDF
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FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
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2N1112
2N1212
2N1217
2N1711
2N2219A
2N2222
2N2222A
2N2369
2N2369A
FN1016
2sC9012
on4409
on4673
ON4843
C9012
S2000A3
bul310xi
2SD5080
MN1016
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PDF
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D2395
Abstract: No abstract text available
Text: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.
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2SB1566
2SD2395
D2395.
O-220FN
0Dlb713
O-220FN
O220FP
D2395
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PDF
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2SD2395
Abstract: 2sb1566
Text: 2SB1566 h ~7 y V Z- $ /Transistors 2 S B 1 5 6 X k ° $ * ' > 7 ^ 7 I s - P N P y ij 6 h7>yz$ Epitaxial Planar PNP Silicon Transistor • Jilj/£11;fritllfi£ ]/L o w Freq. Power Amp. • 1 rfjiEO/Dim ensions U n it: mm) VC E(sat) io n :;:; V c E ( s a t ) = - 0 . 3 V (T y p .)
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2SB1566
2SD2395
T0-220FP
TD-220FN
2sb1566
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PDF
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2sb1566
Abstract: No abstract text available
Text: 2SB1566 2SD2395 Transistors I Power Transistor 60V, —3A 2SB1566 •A b s o lu te maximum ratings (T a = 2 5 ‘C ) •F e a tu re s 1) LowVcE(«rtj. (Typ.— 0.3V at Ic/Ib*=!“ 2/- 0.2A) Param eter Collector-base voltage C oliector-em itter voltage Emitter-base voltage
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2SB1566
2SD2395
2SB1566
2SD2395.
-220FN
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AC188
Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A
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BFT92
2SB733
AC188
BC369
2SA1273
2SA1309
2SA608
2SA966
2SB774
BC328-25
2N2907A-PL
2SA1797Q
2SA1538S
2SA1443-NEC
DTA143ES
mj15004-mot
BCX52GEGSMD
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2SC2021LJNE)
2SB821
2SA937ALN
\2SC2021LN
2SB1276
2021M
2SA937AM
2SB737
2SD786
2SA1137
C2021M
B1568
mosfet ftr 03
2SC1B15
2SA1904
Mosfet FTR 03-E
2SC2021E
2SC1740 transistor
2SK2295
2S0240
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SB1185
Abstract: 2sb1569a 2sd2037 transistor
Text: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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O-220
T0-220FP
T0-220FN
O-220FP
O-220
O-220FN
2SA1634
2SB1369
2SB1185
2sb1569a
2sd2037 transistor
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Untitled
Abstract: No abstract text available
Text: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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T0-220
T0-220FP
O-220FN
O-220FP
O-220
O-220FN
2SA1634
2SB1369
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PDF
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2SC2021LN
2SB821
2SB1276
2SC2021MLN
O-92L
O-92LS
2SB737
V2SD786
2SA1137
2SC1740
2SC1740 transistor
A1757
B1130AM
2SD2061F
2SD1466
2SC5083
B1236A
mos-fet darlington
2sc4721
transistor 2sa1819
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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2SK2262
2SK2294
-220FN
2SK2792
2SK2459N
2SK2460N
0-220FN
2SK2713
2SK2793
2SK2540
2SD2576
2sd2396
TA143E
2SK2459N
2SD 92 M
C2N3904
2SB1569A
2SD2061
2SD1189F
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2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598
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2N3904
2N3906
2N4401
2N4403
2SA821S.
2SA830S.
2SA854S.
2SB822
2n4401 331
2n4403 331
2n3904 409
2n3904 331
k 2715
2n3906 331
1352s
MPSA06 346
2N584
C847B
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2SC5248
Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Text: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F
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T0-126FP
O-126FP
2SB891F
2SB889F
2SB1436
2SD1189F
2SD1200F
2SD1381F
2SD2343
2SD2166
2SC5248
2SD2025
2SB1185
2SA1964
2sb1655
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2SD2159
Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Text: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise
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2SA825S
2SA830S
2SA854S
2SA933AS
2SA933ASLN
2SA1198S
2SA1199S
2SA1515S
2SA1585S
2SC1645S
2SD2159
2SD2421
2SB1485
2SB1333
2sd2061
2sc2021qrs
2SD2172
2sD2388
DARLINGTON RF
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