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    2SB1197 Price and Stock

    PanJit Group 2SB1197A_R1_00001

    SOT-23, TRANSISTOR
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    Ozdisan Elektronik 2SB1197A_R1_00001
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    ROHM Semiconductor 2SB1197KT146Q

    TRANS PNP 32V 0.8A SMT3
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    Ameya Holding Limited 2SB1197KT146Q 50 1
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    CoreStaff Co Ltd 2SB1197KT146Q 1,868
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    ROHM Semiconductor 2SB1197KT146R

    TRANS PNP 32V 0.8A SMT3
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    2SB1197KT146R 1,648
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    Ameya Holding Limited 2SB1197KT146R 200 1
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    New Advantage Corporation 2SB1197KT146R 6,000 1
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    Micro Commercial Components 2SB1197-P-TP

    Interface
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    Micro Commercial Components 2SB1197-R-TP

    Interface
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    2SB1197 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1197 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SB1197 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1197 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1197A_R1_00001 PanJit Group SOT-23, TRANSISTOR Original PDF
    2SB1197K Kexin Low Frequency Transistor Original PDF
    2SB1197K ROHM Low Frequency Transistor (- 32V, - 0.8A) Original PDF
    2SB1197K Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1197K TY Semiconductor Low Frequency Transistor - SOT-23 Original PDF
    2SB1197K Weitron PNP General Purpose Transistors Original PDF
    2SB1197K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1197K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SB1197K ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SB1197KR ROHM Low Frequency Transistor (-32V, -0.8A) Original PDF
    2SB1197KT146Q ROHM TRANSISTOR PNP 32V 0.8A SOT-346 Original PDF
    2SB1197KT146Q ROHM Low Frequency Transistor (-32 V, -0.8 A) Original PDF
    2SB1197KT146R ROHM TRANS PNP 32V 0.8A SOT-346 Original PDF
    2SB1197KT146R ROHM Low Frequency Transistor (-32 V, -0.8 A) Original PDF
    2SB1197-P Micro Commercial Components PNP Silicon Epitaxial Transistors Original PDF
    2SB1197-Q Micro Commercial Components PNP Silicon Epitaxial Transistors Original PDF
    2SB1197-R Micro Commercial Components PNP Silicon Epitaxial Transistors Original PDF

    2SB1197 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23AB

    Abstract: 2SB1197
    Text: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous


    Original
    PDF 2SB1197 OT-23 OT-23 -100m 10-Jan-07 SOT-23AB 2SB1197

    2SD1781

    Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
    Text: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197


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    PDF 2SD1781 OT-23 500mA 2SB1197 2SD1781-Q 2SD1781-R 100mA, 500mA, 100MHz 2SD1781 2sd1781r transistor afr 2SB1197 2SD1781-Q

    2SB1197KQ

    Abstract: 2SB1197KR 2SB1197K 2SB1197K-R
    Text: 2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SC-59 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A A L 3 3 MECHANICAL DATA


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    PDF 2SB1197K SC-59 /-50mA) SC-59, 2SB1197K-Q 2SB1197K-R -500mA, -50mA 31-Dec-2010 2SB1197KQ 2SB1197KR 2SB1197K 2SB1197K-R

    2SB1197K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


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    PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA -50mA, 100MHz 2SB1197K

    2SB1197

    Abstract: 2SD1781 ahr sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR


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    PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz 2SB1197 2SD1781 ahr sot23

    2SB1197K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current


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    PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    ahr TRANSISTOR

    Abstract: ahr sot23
    Text: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K


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    PDF 2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 2SD1781 OT-23 500mA 2SB1197. 100mA 100MHz

    100MHZ

    Abstract: 2SB1197K 2SD1781K VCBO-40V
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


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    PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 2SD1781K= 300uS 100MHZ 2SB1197K 2SD1781K VCBO-40V

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor


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    PDF 2SB1197K 2SD1781K. 96-134-B92)

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


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    PDF 2SD1781K 500mA 2SB1197K. 96-220-D92)

    sot23 ahq

    Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
    Text: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


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    PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz sot23 ahq sot23 ahr AHp sot23 ahr transistor ahr sot23

    2SB1197K

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA


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    PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    sot23 ahq

    Abstract: ahr TRANSISTOR sot23 ahr 2SB1197 ahr sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SB1197 Pb z Small surface mounting type. z Corredtor peak current Max.=1000mA z Suitable for high packing density. z Low voltage(Max.=40v) z High saturation current capability.


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    PDF 2SB1197 1000mA) OT-23 BL/SSSTC016 sot23 ahq ahr TRANSISTOR sot23 ahr 2SB1197 ahr sot23

    100MHZ

    Abstract: 2SB1197K 2SD1781K
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


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    PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K= 100MHZ 2SB1197K 2SD1781K

    2sb1197

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package


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    PDF 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R OT-23 2sb1197

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1197-P 2SB1197-Q 2SB1197-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


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    PDF 2SB1197-P 2SB1197-Q 2SB1197-R OT-23

    2SB1197K

    Abstract: No abstract text available
    Text: 2SB1197K PNP 3 2 1 SC-59 V CEO Value -32 -40 -5 -800 200 1.6 625 2SB1197K=AHR -1.0 -50 -50 -20 -4.0 WEITRON http://www.weitron.com.tw -32 -40 -5.0 -0.5 u -0.5 u 2SB1197K ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics


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    PDF 2SB1197K SC-59 2SB1197K -50mAdc) -10Vdc, 100MHz) O197K

    2SB1197

    Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
    Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781


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    PDF 2SB1197 OT-23 /-50mA) 2SD1781 2SB1197-P 2SB1197-Q 2SB1197-R -500mA, -50mA 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180

    marking 25 SC-59

    Abstract: 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390
    Text: 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3. C ollector ƔFEATURES . Low V 2. B as e CE sat . VCE(sat) ” 0.5V (IC / IB = - 0.5A / - 50mA) . I = - 0.8A. . Complements the 2SD1781K.


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    PDF 2SB1197K 2SD1781K. SC-59 SC-59, MIL-STD-202, 100mA 100MHz 01-Jun-2002 marking 25 SC-59 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390

    2SB1197K

    Abstract: 2SD1781K T146
    Text: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2


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    PDF 2SD1781K 2SB1197K. SC-59 2SB1197K 2SD1781K T146

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor -32V, - 0.8A 2SB1197K •F e a t u r e s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = —0 .5 V (Ic / I b = - 0 . 5 A / - 5 0 m A ) 2) Ic = - 0 . 8 A . 3) C om plem ents the 2 S D 1 7 8 1 K. 0 8 ± 0.1


    OCR Scan
    PDF 2SB1197K 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    Untitled

    Abstract: No abstract text available
    Text: h7 > £ /Transistors 2SB1197K 2 S R 1 1 Q 7 K Epitaxial Planar P N P Silicon Transistor 1£Ji j M ^ lt ilif f l/ L o w Freq. Power Amp. • W fiT f& H / D im e n sio n s U nit: mm 1) VCE (sat) If'Y' cf '-'o VcE (sat)S—0.5V (lc/lB=-0.5A / - 50mA) 2) lc= —800mA T'i>-So


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    PDF 2SB1197K --800mA 800mA

    Untitled

    Abstract: No abstract text available
    Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r


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    PDF 2SB1197K SC-59) 2SB1197K; A/-50