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Toshiba America Electronic Components 2SA1972,F(J TRANS PNP 400V 0.5A TO92MOD
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Toshiba America Electronic Components 2SA1972,T6WNLF(J TRANS PNP 400V 0.5A TO92MOD
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DigiKey	2SA1972,T6WNLF(J	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SA1972 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1972	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1972	Toshiba	Silicon PNP triple diffused type transistor for high voltage switching applications	Scan	PDF
2SA1972	Toshiba	TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE	Scan	PDF
2SA1972,F(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 500MA 400V TO226-3	Original	PDF
2SA1972,T6WNLF(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 500MA 400V TO226-3	Original	PDF
2SA1972(TE6,F,M)	Toshiba	2SA1972 - TRANSISTOR PNP 400V 0.5A LSTM	Original	PDF

2SA1972 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
a1972 Abstract: 2SA1972 Text: 2SA1972 東芝トランジスタシリコンPNP三重拡散形 2SA1972 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項目記号定格単位コレクタ • ベース間電圧	Original	2SA1972 O-92MOD a1972 2SA1972	PDF
A1972 Abstract: 2SA1972 A1972 IE Text: 2SA1972 東芝トランジスタシリコンPNP三重拡散形 2SA1972 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項目記号定格単位コレクタ • ベース間電圧	Original	2SA1972 O-92MOD 20070701-JA A1972 2SA1972 A1972 IE	PDF
transistor A1972 Abstract: A1972 A1972 IE 2SA1972 Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	2SA1972 transistor A1972 A1972 A1972 IE 2SA1972	PDF
a1972 Abstract: transistor A1972 2SA1972 A1972 IE Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	2SA1972 O-92MOD a1972 transistor A1972 2SA1972 A1972 IE	PDF
a1972 Abstract: transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	2SA1972 a1972 transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor	PDF
transistor A1972 Abstract: a1972 2SA1972 a1972 Transistor Nortec 19 Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400	Original	2SA1972 transistor A1972 a1972 2SA1972 a1972 Transistor Nortec 19	PDF
transistor 2sa1972 Abstract: transistor A1972 A1972 Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400	Original	2SA1972 transistor 2sa1972 transistor A1972 A1972	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF

transistor 2sc5353 Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000	Original	DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
A1972 Abstract: 2SA1972 Text: 2SA1972 T O S H IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 M AX. • High Voltage : V ç;e = —400V 9 M A X IM U M RATINGS Ta = 25°C SYMBOL v CBO VCEO Ve b o ic ÏCP :B PC Tj	OCR Scan	2SA1972 --400V 75MAX. A1972 2SA1972	PDF
a1972 Abstract: transistor A1972 transistor 2sa1972 2SA1972 Text: 2SA1972 TO SH IBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS HicrVi V n ltn crp V' m r i = —¿100 V V^-Cj - MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SA1972 a1972 transistor A1972 transistor 2sa1972 2SA1972	PDF
A1972 Abstract: transistor A1972 2sa1972 Text: 2SA1972 TO SH IBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS HicrVi V n ltn crp V' m r i = —¿100 V V^-Cj - MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SA1972 A1972 transistor A1972 2sa1972	PDF
2SA1972 Abstract: No abstract text available Text: TO SHIBA 2SA1972 TOSHIBA TRANSISTOR ? SILICON PNP TRIPLE DIFFUSED TYPE <; A 1 Q 7 9 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 5.1 M AX. Rîo4i V n iw * • v ^ = _ á n n v ' “ ö - ’ . T \jJ 2 j ' MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL	OCR Scan	2SA1972 2SA1972	PDF
a1972 Abstract: 2sa1972 transistor A1972 Text: 2SA1972 TO SH IBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. HicrVi V n lt n crp V' m r i = —¿100 V^-Cj - -V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SA1972 75MAX. a1972 2sa1972 transistor A1972	PDF
Untitled Abstract: No abstract text available Text: 2SA1972 TO SH IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e = —400V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SA1972	PDF
Untitled Abstract: No abstract text available Text: 2SA1972 TOSHIBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 M AX. High Voltage : VCE = -400V M A X IM U M RATINGS Ta=25°C SYMBOL v CBO VCEO v EBO CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SA1972 -400V	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF

2SA1972 Search Results

2SA1972 Price and Stock

Toshiba America Electronic Components 2SA1972,F(J

Toshiba America Electronic Components 2SA1972,T6WNLF(J

2SA1972 Datasheets (6)

2SA1972 Datasheets Context Search

a1972

A1972

transistor A1972

a1972

a1972

transistor A1972

transistor 2sa1972

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

transistor 2sc5353

2SA1930 2sc5171

A1972

a1972

A1972

2SA1972

a1972

Untitled

Untitled

2SC144