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    2SA1680 Price and Stock

    Toshiba America Electronic Components 2SA1680,F(J

    TRANS PNP 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SA1680(F,M)

    TRANS PNP 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SA1680,T6F(J

    TRANS PNP 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SA1680(T6DNSO,F,M

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    2SA1680 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1680 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4408 Original PDF
    2SA1680 Various Russian Datasheets Transistor Original PDF
    2SA1680 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1680 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1680 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1680 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1680 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1680 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1680 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1680 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1680 Toshiba Transistor - PCT Process Scan PDF
    2SA1680 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1680,F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680,T6ASTIF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680,T6F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680,T6SCMDF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680(F,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680(T6DNSO,F,M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680(TE6,F,M) Toshiba 2SA1680 - TRANS PNP 50V 2A TO-92MOD Original PDF

    2SA1680 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1680

    Abstract: 2SA1680 2SC4408
    Text: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1680 2SC4408 O-92MOD 20070701-JA A1680 2SA1680 2SC4408

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408.

    transistor A1680

    Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680

    A1680

    Abstract: 2SC4408 2SA1680
    Text: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1680 2SC4408 O-92MOD A1680 2SC4408 2SA1680

    TD62M8604AF

    Abstract: 2SA1680 HSOP16
    Text: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR A1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. O-92MOD transistor A1680 2sa1680 TRANSISTOR A1680

    transistor A1680

    Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680

    2sc4793

    Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201
    Text: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)


    Original     		PDF 2SA1020 2SA1680 2SA1145 2SC2655 2SC2482 2SC4408 2SC2705 O-220 2SA1837 2sc4793 npn general purpose transistors application 2sd201

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408.

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16 2006-06nt

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )


    OCR Scan     		PDF 2SA1680 2SA1680) 900mW 300ns 2SC4408. O-92MOD 2SA1680

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 961001EAA2'

    A1680

    Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
    Text: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 961001EAA2' A1680 transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT • v ■ V ■ ■ MULTI CHIP * m ■ 8ch LO W SATURATION VOLTAGE SOURCE DRIVER The TD62M 8604AF is M u lti C hip 1C in co rp o ra tes 8 lo w sa tu ra tio n discrete PNP : 2SA1680 transistors.


    OCR Scan     		PDF TD62M8604AF TD62M 8604AF 2SA1680) HSOP16 HSOP16-P-300-1

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 OU05-15 HSOP16-P-300-1

    13002 FL

    Abstract: No abstract text available
    Text: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This 1C is suitable for a battery use motor drive and LEE


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 HSOP16-P-300-1 13002 FL

    2sa1680

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1680 U nit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. » • • • Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P ç = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 75MAXLL-* 2sa1680

    transistor 2SA1680

    Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR
    Text: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. O-92MOD transistor 2SA1680 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR

    2SA1692

    Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680
    Text: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15


    OCR Scan     		PDF 2SA1678 2SA1680 2SA1681 2SA168Z 2SA1683 2SA1685 2SA1707 2SC4488 2SA1708 2SC4489 2SA1692 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 75MAX 961001EAA2'