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    2SA1357 Search Results

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    2SA1357 Price and Stock

    Vishay Intertechnologies 2SA1357Y

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    Quest Components 2SA1357Y 632
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    Toshiba America Electronic Components 2SA1357Y

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    Quest Components 2SA1357Y 80
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    Toshiba America Electronic Components 2SA1357

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    Quest Components 2SA1357 41
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    2SA1357 16
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    Bristol Electronics 2SA1357 105
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    2SA1357 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1357 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SA1357 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1357 Various Russian Datasheets Transistor Original PDF
    2SA1357 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1357 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1357 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1357 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1357 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1357 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1357 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1357 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1357 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1357 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1357 Toshiba Silicon PNP transistor for strobe flash applications and audio power amplifier applications Scan PDF
    2SA1357 Toshiba AUDIO FREQUENCY POWER AMPLIFIER Scan PDF
    2SA1357 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1357 Toshiba TO-126 Package Transistor Scan PDF
    2SA1357-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1357-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA1357 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V


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    PDF O-126C 2SA1357 O-126C -10mA,

    A1357 transistor

    Abstract: a1357 2SA1357
    Text: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)


    Original
    PDF 2SA1357 A1357 transistor a1357 2SA1357

    2SA1357

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range


    Original
    PDF O-126C 2SA1357 O-126C -10mA, 2SA1357

    2sa1357

    Abstract: IC 2sa1357 70Vce
    Text: 2SA1357 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃


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    PDF 2SA1357 O-126C -10mA, 2sa1357 IC 2sa1357 70Vce

    2SA1357

    Abstract: A1357
    Text: 2SA1357 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1357 ○ ストロボフラッシュ ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −0.5 A) • hFE = 70 (最小) (VCE = −2 V, IC = −4 A)


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    PDF 2SA1357 20070701-JA 2SA1357 A1357

    A1357 transistor

    Abstract: a1357 Toshiba A1357 2SA1357
    Text: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)


    Original
    PDF 2SA1357 A1357 transistor a1357 Toshiba A1357 2SA1357

    Untitled

    Abstract: No abstract text available
    Text: TD62M8601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8601F 8CH LOW SATURATION VOLTAGE SOURSE DRIVER TD62M8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display


    Original
    PDF TD62M8601F TD62M8601F 2SA1357) HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M8601FG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8601FG 8CH LOW SATURATION VOLTAGE SOURSE DRIVER TD62M8601FG is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display


    Original
    PDF TD62M8601FG TD62M8601FG 2SA1357) HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M4601FG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601FG 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601FG is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display


    Original
    PDF TD62M4601FG TD62M4601FG 2SA1357) SSOP16

    A1357 transistor

    Abstract: A1357
    Text: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)


    Original
    PDF 2SA1357 150HIBA A1357 transistor A1357

    2SA1357

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION •High Collector Current-IC= -5.0A ·DC Current Gain: hFE= 70 Min @IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS ·Strobe flash applications.


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    PDF 2SA1357 2SA1357

    2SA1357

    Abstract: SSOP16 TD62M4601F LED display module
    Text: TD62M4601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display


    Original
    PDF TD62M4601F TD62M4601F 2SA1357) SSOP16 2SA1357 SSOP16 LED display module

    2SA1357

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35


    Original
    PDF O-126C 2SA1357 O-126C -10mA, 2SA1357

    b0944

    Abstract: b0946 SM2177 RCA1C13 rca1c04 to-53 2n3191 2SA1120 Motorola 2N6297 2N3183
    Text: POWER SILICON PNP Item Part Number Number I C 5 10 - >= 20 2S81095M MJE253 2S8860 RCA1C04 2S81095L 2S81168 2S81216 2S81095K ~~~~~ 25 30 RCA1C13 SK3626 2N6468 2N6476 SM2177 NA62U NA62W 80S18 BDS19 I(C) 35 40 50 2SA1357Y 80944 B0944 B0944F MJD210 MJD21 0-1


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    PDF MJE703T 2N6297 2S81102 2S8908 S1237 MJE254 OT3729 OT3757 b0944 b0946 SM2177 RCA1C13 rca1c04 to-53 2n3191 2SA1120 Motorola 2N6297 2N3183

    2SA1357

    Abstract: No abstract text available
    Text: 2SA1357 TO SH IBA 2 S A 1 357 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO POWER AMPLIFIER APPLICATIONS MIN hFE of 70 at -2 V , -4A . —5A Rated Collector Current. MAX VcE(sat)of -1.0V at -4 A Iq . 10W at 25°C Case Temperature.


    OCR Scan
    PDF 2SA1357 10mstransportation 2SA1357

    AC188

    Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A


    OCR Scan
    PDF BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 2N2907A-PL 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD

    LED display module

    Abstract: pj496 j496
    Text: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8601F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M 8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display module applications.


    OCR Scan
    PDF TD62M8601F TD62M 8601F 2SA1357) HSOP16 LED display module pj496 j496

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TD62M4601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601 F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan
    PDF TD62M4601F TD62M4601 TD62M4601F 2SA1357) SSOP16 2SA1357 SSOP16-P-225-1

    Untitled

    Abstract: No abstract text available
    Text: 2SA1357 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS KA1 357 Unit in mm STROBE FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. • • . • MIN hjrE of 70 at —2V, —4A. —5A Rated Collector Current. MAX V cE(sat)of -1-0V at -4 A I q .


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    PDF 2SA1357 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TD62M4601F TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601 F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan
    PDF TD62M4601F TD62M4601 TD62M4601F 2SA1357) SSOP16 ---------------------------------2SA1357 2SA1357 2SA1357 S2SA1357

    2SA1357

    Abstract: SSOP16 TD62M4601F
    Text: TOSHIBA TD62M4601F TO SH IBA BIPOLAR D IG ITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M 4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use m otor drive and LED


    OCR Scan
    PDF TD62M4601F TD62M4601F 2SA1357) SSOP16 2SA1357 SSOP16-P-225-1 2SA1357

    TD62M8601

    Abstract: No abstract text available
    Text: TOSHIBA TD62M8601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8601 F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LEE


    OCR Scan
    PDF TD62M8601F TD62M8601 TD62M8601F 2SA1357) HSOP16 HSOP16-P-300-1

    A1357 transistor

    Abstract: a1357 2SA1357 PF0100
    Text: TOSHIBA 2SA1357 2 S A 1 357 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. AUDIO PO W ER AM PLIFIER APPLICATIONS. B.3MAX. MIN hFE of 70 at -2V , -4A . —5A Rated Collector Current. MAX V0E(sat)°f —1«0V at —4A Ig.


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    PDF 2SA1357 961001EAA2' A1357 transistor a1357 2SA1357 PF0100

    Untitled

    Abstract: No abstract text available
    Text: 2SA1357 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. A U D IO PO W ER AM PLIFIER APPLICATIONS. • • • • MIN hpE of 70 at —2V, —4A. —5A Rated Collector Current. MAX V cE (sat)of -1-0V at -4 A I q . 10W at 25°C Case Temperature.


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    PDF 2SA1357