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    2SA1300 Search Results

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    2SA1300 Price and Stock

    3M Interconnect 1U30A-MB2-SA1-300-CE

    USB3 CABLE ASSEMBLY 3 METER
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    DigiKey 1U30A-MB2-SA1-300-CE Box 48 1
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    Mouser Electronics 1U30A-MB2-SA1-300-CE 24
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    3M Interconnect 1U30A-MB2-SA1-300

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30A-MB2-SA1-300 Bulk 38 1
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    Mouser Electronics 1U30A-MB2-SA1-300
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    3M Interconnect 1U30G-MB2-SA1-300

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30G-MB2-SA1-300 Bulk 31 1
    • 1 $123.64
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    3M Interconnect 1U30S-MB2-SA1-300

    USB3 CABLE ASSEMBLY 3 METER
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    DigiKey 1U30S-MB2-SA1-300 Box 2 1
    • 1 $70.06
    • 10 $57.115
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    Mouser Electronics 1U30S-MB2-SA1-300 40
    • 1 $67.75
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    Nihon Dempa Kogyo Co Ltd NX5032SA-13.000000MHZ-G1

    CRYSTAL 13.0000MHZ 8PF SMD
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    NX5032SA-13.000000MHZ-G1 Reel 1,000
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    NX5032SA-13.000000MHZ-G1 Digi-Reel 1
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    Find more 2SA1300 price and stock on Findchips.com

    2SA1300 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1300 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1300 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    2SA1300 Various Russian Datasheets Transistor Original PDF
    2SA1300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1300 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1300 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1300 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1300 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1300 Unknown Cross Reference Datasheet Scan PDF
    2SA1300 Toshiba PNP transistor Scan PDF
    2SA1300 Toshiba TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SA1300 Toshiba TO-92 Transistors Scan PDF
    2SA1300 Toshiba TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1300-BL Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1300BL Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1300-G Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1300GR Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1300-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1300Y Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

    2SA1300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)


    Original     		PDF 2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K OT-89 QW-R208-012

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    2sA1300 transistor

    Abstract: 2SA1300
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF 2SA1300 -10mA -100mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR（PNP ） TO—92 FEATURES Power dissipation PCM : 0.75 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -20 V Operating and storage junction temperature range


    Original     		PDF 2SA1300 -10mA 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 -50mA QW-R208-012

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    TO92 LOW VCE PNP

    Abstract: No abstract text available
    Text: 2SA1300 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SA1300 -10mA -100mA 30MHz TO92 LOW VCE PNP

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C

    2SA1300

    Abstract: 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR
    Text: 2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   High DC Current gain and excellent hFE linearity Low Saturation Voltage G 2SA1300-Y


    Original     		PDF 2SA1300 2SA1300-Y 2SA1300-GR 2SA1300-BL 19-Jan-2011 -10mA, 30MHz 2SA1300 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR

    2SA1300

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) -50mA QW-R201-045

    2SA1300

    Abstract: 2sA1300 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2SA1300 2sA1300 transistor

    2sA1300 transistor

    Abstract: 2SA1300
    Text: 2SA1300 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TJ : 150℃


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300

    2SA1300

    Abstract: QW-R208-012
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 QW-R208-012 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)


    OCR Scan     		PDF 2SA1300 961001EAA2' 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)


    OCR Scan     		PDF 2SA1300

    2SA1309

    Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
    Text: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303


    OCR Scan     		PDF Ta-25cC, 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 O-92JFÃ 2SA1300 2SA1309 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N sa1312 2SC3280

    Untitled

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 3 Q0 Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC C urrent Gain and Excellent h p g Linearity : hpE (i) = 140—600 (V ç e = —IV, I ç = —0.5A)


    OCR Scan     		PDF 2SA1300 961001EAA2'

    A1300 transistor

    Abstract: A1300 GR A1300 transistor A1300 br A1300 GR br A1300 A1300 y 2SA1300 SA1300 br A1300 transistor
    Text: TOSHIBA 2SA1300 2 S A 1 300 T O SH IB A T R A N SISTO R ST R O BO FLASH A PP LIC A TIO N S SILICO N PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M P O W ER A M P LIF IER A PP LIC A T IO N S . 5.1 M A X . High DC Current Gain and Excellent hpE Linearity


    OCR Scan     		PDF 2SA1300 A1300 transistor A1300 GR A1300 transistor A1300 br A1300 GR br A1300 A1300 y 2SA1300 SA1300 br A1300 transistor