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    2N6730 Search Results

    2N6730 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6730 Zetex Semiconductors PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Original PDF
    2N6730 Central Semiconductor Silicon Power Transistors, TO-237 (EBC) Case Scan PDF
    2N6730 Central Semiconductor Power Transistors TO-237 Case Scan PDF
    2N6730 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6730 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6730 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6730 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6730 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6730 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6730 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6730 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6730 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    2N6730 National Semiconductor Medium Power Transistors Scan PDF
    2N6730 National Semiconductor Medium Power Transistors Scan PDF
    2N6730 National Semiconductor PNP Transistors Scan PDF
    2N6730 National Semiconductor Medium Power Transistors Scan PDF
    2N6730 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N6730 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N6730 APP TIN/LEAD Central Semiconductor TRANSISTOR-BIPOLAR POWER Original PDF

    2N6730 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6728

    Abstract: 2N6730 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSA00189167.
    Text: Not Recommended for New Design Please Use ZTX553 / ZTX753 2N6728 2N6729 2N6730 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZTX553 ZTX753 2N6728 2N6729 2N6730 2N6730 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSA00189167.

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIALTRANSISTORS 2N6730 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original     		PDF 2N6730 O-237 C-120

    2N6728

    Abstract: 2N6730 2N6729 DSA003749
    Text: 2N6728 2N6729 2N6730 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6728 Collector-Base Voltage VCBO


    Original     		PDF 2N6728 2N6729 2N6730 -100V, -250mA -10mA* 2N6728 2N6730 2N6729 DSA003749

    2n6730

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6730 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Designed for General Purpose Medium Power Amplifier and Switching Circuits.


    Original     		PDF O-237 2N6730 C-120 2n6730

    2N6730

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIALTRANSISTORS 2N6730 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector -Base Voltage


    Original     		PDF ISO/TS16949 2N6730 O-237 C-120 2N6730

    2N6718

    Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
    Text: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100


    Original     		PDF O-237 2N6722 2N6723 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724 2N6718 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722

    DIAC DB2

    Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
    Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors


    Original     		PDF C-120 OT-23 OT23-6L DO-213AB DO-214AC DO-214AA OT-223 O-252 DIAC DB2 BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    2N6730

    Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
    Text: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A


    OCR Scan     		PDF 2N6716 2N6717 2N6718 2N6728 2N6729 2N6730 SE194 2N6730 SE194 7292n 2n 6718 SE-194

    2N6717

    Abstract: 2N6730 2N6728 2N6718 2N6716 2N6729 World transistors and ic
    Text: Data Sheet Central 2N671 6 2 N6728 Sem iconductor Corp. 2 N6 7 18 2N6730 2N6717 2N67.29. NPN PNP COMPLEMENTARY S IL IC O N 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 POWER TRANSISTORS M anufacturers of W orld Class Discrete Semiconductors


    OCR Scan     		PDF 2N6716 2N6717 2N6718 2N6728 2N6729 2N6730 T0-237 2N6716, World transistors and ic

    2n6700

    Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 2N6718 2N6729 2N6724 2N6725

    2n6730

    Abstract: No abstract text available
    Text: 2N6728 2N6729 2N6730 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 100 V olt V,CEO G a in of 20 at lc = 0.5 A m p Ptot=1 W att E-Lina T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage


    OCR Scan     		PDF 2N6728 2N6729 2N6730 cH7Q57Ã 001G35S 2n6730

    2n6730

    Abstract: No abstract text available
    Text: 2N6728 2N6729 2N6730 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 100 V o lt V CE0 * G ain o f 20 a t lc = 0.5 A m p * P,o,=1Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF 2N6728 2N6729 2N6730 2N6730 -100V,

    2N6718 NATIONAL SEMICONDUCTOR

    Abstract: T0-237 NSDU07 bc640 to237 2N6717 T0237 2N6730 2N6718 mpsa06 2N3019
    Text: bflE J> m fc,SD113D ODBTSIS STT • NSC5 NATL SEHICOND D I S C R E T E Devices V C£0(su*l> 100 PUP NPN 2N6553 2N6718 80 2N6730 mA (MHz) Min IDA NF (dB) Max P d (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200


    OCR Scan     		PDF SD113D 2N6553 T0-202 2N6718 2N6730 T0-237 NSDU07 2N3019 2N3700 2N6718 NATIONAL SEMICONDUCTOR NSDU07 bc640 to237 2N6717 T0237 mpsa06 2N3019

    ztx614

    Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan     		PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    2N6730

    Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
    Text: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250


    OCR Scan     		PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 2N6730 2N6719

    CENW64

    Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
    Text: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50


    OCR Scan     		PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 CENW64 2N6730 2N6719

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    ksd113

    Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
    Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100


    OCR Scan     		PDF bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92

    nsdu57

    Abstract: TO-237 2N6556 2N5415
    Text: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11


    OCR Scan     		PDF bSG113Q 0D377flfi 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 nsdu57 TO-237 2N6556 2N5415

    G25CW

    Abstract: CIL10
    Text: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO


    OCR Scan     		PDF 2N6708 O-237-2 O-237-2 TN4235 TN4236 TN4314 G25CW CIL10

    2N6706

    Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
    Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base


    OCR Scan     		PDF O-237 O-237 O-237-1 O-237-2 TN4037 O-237-2 TN4234 2N6706 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713

    2LU50

    Abstract: No abstract text available
    Text: E-LINE TRANSISTORS TABLE 5: HIGH PERFORMANCE E LINE TRANSISTORS Pd = 1 W att The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 Amp with power dissipation capabilities of 1 Watt at 25°C ambient temperature. Typical


    OCR Scan     		PDF ZTX458 ZTX457 ZTX455 FXT455 ZTX454 ZTX453 FXT453 2N6730 2N6732 2N6729 2LU50