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    2N581 Price and Stock

    Central Semiconductor Corp 2N5817 APM PBFREE

    Bipolar Transistors - BJT 40V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch
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    Mouser Electronics 2N5817 APM PBFREE
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    Avnet Americas 2N5817 APM PBFREE Ammo Pack 2,000
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    Central Semiconductor Corp 2N5818 APM PBFREE

    Bipolar Transistors - BJT 40V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
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    Central Semiconductor Corp 2N5818 TRE PBFREE

    Bipolar Transistors - BJT 40V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
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    Mouser Electronics 2N5818 TRE PBFREE
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    Avnet Americas 2N5818 TRE PBFREE Reel 2,000
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    Central Semiconductor Corp 2N5818 TIN/LEAD

    Bipolar Transistors - BJT NPN 50Vcbo 50Vces 40Vceo 5.0Vebo 625mW
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    Mouser Electronics 2N5818 TIN/LEAD
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    Avnet Americas 2N5818 TIN/LEAD Box 2,000
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    Central Semiconductor Corp 2N5818 TRE TIN/LEAD

    Bipolar Transistors - BJT 40V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
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    Mouser Electronics 2N5818 TRE TIN/LEAD
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    Find more 2N581 price and stock on Findchips.com

    2N581 Datasheets (190)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N581 Germanium Power Devices Germanium PNP Small Signal Transistors Scan PDF
    2N581 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N581 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N581 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N581 Unknown GE Transistor Specifications Scan PDF
    2N581 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N581 Unknown Vintage Transistor Datasheets Scan PDF
    2N581 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N581 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N581 RCA RCA Transistor and Diode Data Scan PDF
    2N5810 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N5810 Central Semiconductor NPN EPOXY Transistors Scan PDF
    2N5810 Central Semiconductor NPN Epoxy - Switching and General Purpose Transistors Scan PDF
    2N5810 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5810 Micro Electronics SILICON AF MEDIUM POWER TRANSISTOR Scan PDF
    2N5810 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5810 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5810 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5810 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5810 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    2N581 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC335

    Abstract: MPS005 CS9013 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2SC403 2S060 2S0638
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 ~~~~~~ 15 20 MPS3402 MPS3402 MPS3403 MPS3403 MPS3414 MPS3414 2N3402 2N3414 §E~~414 25 30 35 40 45 50 55 60 TMPT1009F2 2SC371 MPS005


    Original     		PDF MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 BC335 MPS005 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2S060

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    vane air flow sensor

    Abstract: pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503
    Text: Application Note 27701B* APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro MicroSystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


    Original     		PDF 27701B* 362-A vane air flow sensor pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


    Original     		PDF E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


    Original     		PDF BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


    OCR Scan     		PDF 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001

    2n5818

    Abstract: No abstract text available
    Text: m 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA PACKAGE STYLE TO-92 m 40 V o < lc Pd i s s 500 mW @ Ta = 25 °C Tj -65 °C to +135 °C


    OCR Scan     		PDF 2N5818 2N5818

    2N3638

    Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
    Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150


    OCR Scan     		PDF 500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 2N5815 2N3638A HS5810 2N5822

    2N5818

    Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
    Text: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


    OCR Scan     		PDF 2N5810 2N5819 2N5819 O-92F 2N5810, 2N5811, 2N5814, 2N5818 2N5815 2N5814 2N5816 2N5811 BOX69477

    2N5819

    Abstract: No abstract text available
    Text: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


    OCR Scan     		PDF 2N5810 2N5819 O-92F 2N5810 2N5819 O-92F 2N5811, 2N5810, 2N5814,

    2SC875 E

    Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60


    OCR Scan     		PDF 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2SC875 E 2SC875 2N5822 2SB504A

    2N5815

    Abstract: 2N5816 2N3856 2N5818 2N5819 2N3856A 2N5810 2N5811 2N5812 2N5813
    Text: PNP SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO-18 PACKAGE IhpE; — 2V — 2mA a Type VcE(sat) VcEO 2N5811 60-200 5 2N5813 1 50-500 * @ 10mA Min. @ — iiOOmA — 50m A Max. (V) (V) Pt T a :=:25°C (mW) Ccb @ — 10V 1 MHz T ypical


    OCR Scan     		PDF 500mA 2N5811 2N5810 2N5813 2N5812 2N5815 2N5814 2N5817 2N5816 2N5819 2N3856 2N5818 2N3856A 2N5810 2N5812

    SCR CONTROL BY PUT CIRCUIT

    Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
    Text: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.


    OCR Scan     		PDF 2IM5810-6Q17 GES5810-6017 2N6027 2N6028 2N2926 SCR CONTROL BY PUT CIRCUIT ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1

    2N3638

    Abstract: 2N3638A replacement for 2n2905 2N5816 2N5815 HS5810 2n2905 replacement 2N6003 2N5819 2N6006
    Text: NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO 18 PACKAGE @ 10mA Min. V 'E- (i'll 1 @ 500mA, 50mA Max. (V (V) VCEO hFF (a) 2V, 2mA Type 2 N 5810 60-200 * 2N5812 150-500 * 2 N 5814 60-120 C cb @ 10V Typical Pt Ta = 2!5°C (mW) Typical


    OCR Scan     		PDF 500mA, 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N3638 2N3638A replacement for 2n2905 HS5810 2n2905 replacement 2N6003 2N5819 2N6006

    2N5819

    Abstract: TO92F 2N5810 2N5814
    Text: 2N5810 2N5819 th rou gh COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THEY ARE SUPPLIED IN TO-92F PLASTIC CASE WITH


    OCR Scan     		PDF 2N5810 2N5819 O-92F 2N5810, -15rmrt-- 2N5814, 2H5811, TO92F 2N5814

    Untitled

    Abstract: No abstract text available
    Text: 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 750 mA V ce 40 V P diss 500 mW @ TA = 25 °C Tj -65 °C t o +135 °C T stg -65 °C t o +150 °C


    OCR Scan     		PDF 2N5818 2N5818

    Untitled

    Abstract: No abstract text available
    Text: 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA lc V -40 V ce P diss 500 mW @ Ta = 25 °C Tj -65 °C t o +135 °C T -65 °C t o +150 °C


    OCR Scan     		PDF 2N5819 2N5819

    2N5819

    Abstract: 1510LC
    Text: m 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA PACKAGE STYLE TO- 92 PIN CIRCLE m -40 V o < lc Pd i s s 500 mW @ Ta = 25 °C Tj -65 °C to +135 °C


    OCR Scan     		PDF 2N5819 2N5819 1510LC

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N4355

    Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
    Text: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D


    OCR Scan     		PDF 50113G 003SMM3 30fiA, 2N4355 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 2N4354 T-12

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


    OCR Scan     		PDF 2N5911/2N5912 367mW 500mW 2N5911 2N5912 DDDCH33 300nA,

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits

    2N5815

    Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
    Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50


    OCR Scan     		PDF 2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236

    2N5816

    Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B


    OCR Scan     		PDF 2N4953 O-92B 2N4954 2N4969 O-106 2N4970 2N4971 2N5816 2N5815 2N5225 2N5143 2N5447 2N5226 2N5450 2N5818 2N5819